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rg2006 Abstract: A1847 ENA1847 RG2006JS-SB Contextual Info: RG2006JS-SB Ordering number : ENA1847 SANYO Semiconductors DATA SHEET RG2006JS-SB Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • VRRM=600V trr=16ns typ. Low noise at the time of reverse recovery Specifications	Original	ENA1847 RG2006JS-SB O-220ML SC-67, OT-186use. A1847-3/3 rg2006 A1847 ENA1847 RG2006JS-SB	PDF

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rg2006

Abstract: A1847 ENA1847 RG2006JS-SB
Contextual Info: RG2006JS-SB Ordering number : ENA1847 SANYO Semiconductors DATA SHEET RG2006JS-SB Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • VRRM=600V trr=16ns typ. Low noise at the time of reverse recovery Specifications

Original

ENA1847 RG2006JS-SB O-220ML SC-67, OT-186use. A1847-3/3 rg2006 A1847 ENA1847 RG2006JS-SB

PDF