EGP50A Search Results

Contextual Info: EGP50A thru EGP50G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop

EGP50A

Abstract: EGP50D EGP50F EGP50G GP20
Contextual Info: EGP50A THRU EGP50G GLASS PASSIVATED FAST EFFICIENT RECTIFIER E D * Reverse Voltage - 50 to 400 Volts P A T E N T Case Style GP20 1.0 25.4 MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) Forward Current - 5.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratories

EGP50A

Abstract: EGP50D EGP50B EGP50C EGP50F EGP50G GP20
Contextual Info: EGP50A thru EGP50G Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier * d e t Features n e t Pa GP20 Reverse Voltage 50 to 400 V Forward Current 5.0 A • Plastic package has Underwriters Laboratories Flammability Classification 94V-0

EGP50A

Abstract: EGP50D EGP50B EGP50C EGP50F EGP50G GP20
Contextual Info: EGP50A thru EGP50G Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier * d e t Features n e t Pa GP20 Reverse Voltage 50 to 400 V Forward Current 5.0 A • Plastic package has Underwriters Laboratories Flammability Classification 94V-0

EGP50A

Abstract: EGP50D EGP50G rectifier diode GP20 EGP50B GP20 JESD22-B102D J-STD-002B EGP50C
Contextual Info: EGP50A thru EGP50G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop d* e t n e Pat *Glass Encapsulation technique is covered by

Contextual Info: EGP50A THRU EGP50G GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 400 Volts Forward Current -5 .0 Amperes FEATURES Case Style GP20 ♦ Plastic package has Underwriters Laboratories Flammability Classification 94V-0 ♦ Glass passivated cavity-free junction

EGP50A

Abstract: EGP50D
Contextual Info: EGP50A thru EGP50G Vishay Semiconductors Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 5.0 A VRRM 50 V to 400 V IFSM 150 A trr 50 ns VF 0.95 V, 1.25 V Tj max. 150 °C ed* t n e Pat GP20 *Glass Encapsulation technique is covered by

Contextual Info: EGP50A . EGP50M 5 Amp. Glass Passivated Avalanche Ultrafast Recovery Rectifier Dimensions in mm. DO-201AD Plastic Voltage 50 to 400 V Current 5 A at 55 °C R • Glass passivated junction Mounting instructions 1. Min. distance from body to soldering point,

EGP50A

Abstract: EGP50B EGP50G GP20 J-STD-002
Contextual Info: EGP50A thru EGP50G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Ultrafast reverse recovery time • Low forward voltage drop

Contextual Info: EGP50A-EGP50G High Efficiency Rectifiers VOLTAGE RANGE: 50 - 400 V CURRENT: 5.0 A DO - 27 Features Low cost Diffused junction Low leakage Low forward voltage High current capability Easily cleaned with alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0

EGP50A

Abstract: EGP50D EGP50 EGP50B EGP50F EGP50G EGP50J
Contextual Info: EGP50A. EGP50J 5 Amp. Glass Passivated Avalanche Ultrafast Recovery Rectifier Dimensions in mm. DO-201AD Plastic Voltage 50 to 600 V. Current 5 A at 55 ºC. 9.1 ± 0.3 62.5 ± 0.5 Mounting instructions 1. Min. distance from body to soldering point,

EGP50A

Abstract: EGP50B EGP50G GP20 J-STD-002
Contextual Info: EGP50A thru EGP50G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency

EGP50A

Contextual Info: EGP50A thru EGP50G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 5.0 A VRRM 50 V to 400 V IFSM 150 A trr 50 ns VF 0.95 V, 1.25 V Tj max. 150 °C ed* t n e Pat GP20 *Glass Encapsulation technique is covered by

egp 100

Abstract: EGP50A EGP50D EGP50B EGP50C EGP50F EGP50G
Contextual Info: HIGH EFFICIENCY RECTIFIER EGP50A THRU EGP50G 1.Dimensions of outlines YIGUANG Unit: mm DO-27 2.Maximum Ratings TYPE NUMBER Symbols Units EGP 50B EGP 50C EGP 50D EGP 50F EGP 50G 50 100 150 200 300 400 Maximum repetitive peak reverse voltage VRRM Maximum RMS voltage

Contextual Info: FAGOR a EGP50A. EGP50G 5 Amp. Glass Passivated Avalanche Ultrafast Diode Dimensions in mm. t D 0-201AD Plastic 11 Voltage 50 to 400 V. Current 5 A at 55 °C. O — 52.5 m in Mounting instructions 1. Min. distance from body to soldering point, 4 mm.

EGP50A

Abstract: EGP50G EGP50 EGP50B EGP50D EGP50F
Contextual Info: EGP50A. EGP50G 5 Amp. Glass Passivated Avalanche Ultrafast Recovery Rectifier Dimensions in mm. DO-201AD Plastic Voltage 50 to 400 V. Current 5 A at 55 ºC. 9.1 ± 0.3 62.5 ± 0.5 Mounting instructions 1. Min. distance from body to soldering point,

Contextual Info: EGP50A thru EGP50G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Ultrafast reverse recovery time • Low forward voltage drop

egp 100

Abstract: EGP50A EGP50D EGP50F EGP50G GP20
Contextual Info: EGP50A THRU EGP50G Glass Passivated Ultrafast Rectifier Reverse Voltage 50 to 400 V Forward Current 5.0 A * d e t n e t Pa GP20 Features • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Cavity-free glass passivated junction

Contextual Info: EGP50A . EGP50M 5 Amp. Glass Passivated Avalanche Ultrafast Recovery Rectifier Dimensions in mm. DO-201AD Plastic Voltage 50 to 400 V Current 5 A at 55 °C R • Glass passivated junction Mounting instructions 1. Min. distance from body to soldering point,

EGP50A

Abstract: EGP50D
Contextual Info: EGP50A thru EGP50G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current d* e t n e Pat • Low switching losses, high efficiency

EGP50A

Abstract: EGP50D
Contextual Info: EGP50A thru EGP50G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current d* e t n e Pat • Low switching losses, high efficiency

EGP50A

Abstract: EGP50D
Contextual Info: EGP50A thru EGP50G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop d* e t n e Pat *Glass Encapsulation technique is covered by

EGP50A

Abstract: EGP50D EGP50F EGP50G GP20
Contextual Info: EGP50A THRU EGP50G GLASS PASSIVATED FAST EFFICIENT RECTIFIER E D * Reverse Voltage - 50 to 400 Volts P A T E N T Case Style GP20 1.0 25.4 MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) Forward Current - 5.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratories

Contextual Info: EGP50A THRU EGP50G GLASS PASSIVATED FAST EFFICIENT RECTIFIER Voltage - 50 to 400 Volts Current - 5.0 Amperes FEATURES ♦ ♦ ♦ ♦ GP-20 .210 5 .3 .190 (4.83) DIA. 1 .0 (2 5 .4 ) MIN. ♦ ♦ ♦ •375(9.5) .2 8 5 (7 .2 ) ♦ 1 .0 (2 5 .4 ) HIN. ♦