EDI441024C Search Results

EDI441024C

Abstract: A517 transistor a6 s a213c
Contextual Info: EDI441024C ^EDI E lectro de D*algns I n c ^ 1Mx4 Dynamic RAM CMOS, Monolithic High Performance Four Megabit Monolithic DRAM The EDI441024C is a fast page mode4096K bit high performance, low power CMOS Dynamic RAM organ­ ized as 1024Kx4. The use of four-layer poly process,

DCH3

Abstract: EDI441024C ca011 a719
Contextual Info: ELECTRONIC DESIGNS INC ^SEDI St»elrecle D M lg n t In c i 3QE ]> 11 ' ' ' • 1 The EDI441024C is a fast page mode 4096K bit high performance, low power CMOS Dynamic RAM organ­ ized as 1024Kx4. The use of four-layer poly process, combined with silicide technology and a single transistor

EDI441024C

Abstract: a517
Contextual Info: moi EDI441024C Electrode D *«lgni Inop High Performance Four Megabit Monolithic DRAM 1Mx4 Dynamic RAM CMOS, Monolithic The EDI441024C is a fast page mode 4096K bit high performance, low power CMOS Dynamic RAM organ­ ized as 1024Kx4. The use of four-layer poly process,

Contextual Info: WSX EDI441024C afCTROMC 0E9GNSINC. 1Megx4 Fast Page DRAM 1Megabit x 4 Dynamic RAM 5V, Fast Page Features The EDI441024C is a high performance, low power CMOS Dynamic RAM organized as 1 Megabit x 4. 1 Meg x 4 bit CMOS Dynamic During READ and WRITE cycles each bit is addressed through 20

1Mx4 Dynamic RAM

Abstract: transistor A7 ED1441024C
Contextual Info: _ EDI441024C ^EDI Electronic D««igna Inep High Performance Four Megabit Monolithic DRAM 1Mx4 Dynamic RAM CMOS, Monolithic The EDI441024C is a fast page mode 4096K bit high performance, low power CMOS Dynamic RAM organ­ ized as 1024Kx4. The use of four-layer poly process,

EDI441024C

Contextual Info: W 3X EDI441024C 1Megx4Fast Page DRAM ELECTRONIC.DESIGNS, INC. 1Megabitx 4 Dynamic RAM 5 V,FastPage The E DI441024C isa high performance, la/v power CMO S Dynamic I Features RAM organized as 1 Megabit x 4. 1 M egx4bitC M 0SD ynam ic address bits which are entered 10 at a time A0-A9 . RAS\ is used

Contextual Info: moi EDI441024C E le ctrod e D e sig ni I n o ^ High Performance Four Megabit Monolithic DRAM 1Mx4 Dynamic RAM CMOS, Monolithic The EDI441024C is a fast page mode 4096K bit high performance, low power CMOS Dynamic RAM organ­ ized as 1024Kx4. The use of four-layer poly process,

Contextual Info: ^EDL EDI441024C 1Megx4 Fast Page DRAM ELECTRONIC DESIGNS, INC 1 Megabit x 4 Dynamic RAM 5V, Fast Page The EDI441024C is a high performance, low power CMOS Dynamic Features RAM organized as 1 Megabit x 4. 1 Meg x 4 bit CMOS Dynamic During READ and WRITE cycles each bit is addressed through 20

Contextual Info: EDI441024C ^EDI Electronic Designs Inc. High Performance Four Megabit Monolithic DRAM 1 Megabit x 4 Dynamic RAM CMOS, Monolithic Features The EDI441024C is a high performance, low power CMOS Dynamic RAM organized as 1 Megabit x 4. During READ and WRITE cycles each bit is ad­

EDI441024C

Abstract: EDI441024C100LZB EDI441024C70BB EDI441024C70LZB EDI441024C70LZI EDI441024C80BB EDI441024C80LZB
Contextual Info: ^EDI E D I4 4 1 0 2 4 C 1Megx4 Fast Page DRAM ELECTRONIC DESIGNS, INC 1 Megabit x 4 Dynamic RAM 5V, Fast Page The EDI441024C is a high performance, low power CMOS Dynamic Features RAM organized as 1 Megabit x 4. 1 Meg x 4 bit CMOS Dynamic address bits which are entered 10 at a time A0-A9 . RAS\ is used

Contextual Info: ^EDI ELECTPOWC MSGNS NC. | INSIDE SECTION 3 . Density 1 Megabit 1 Megabit 1 Megabit 1 Megabit 4 Megabits 4 Megabits 4 Megabits 4 Megabits 4 Megabits 4 Megabits 16 Megabits 16 Megabits 18 Megabits 16 Megabits Organization IM xl IM xl 1Mx1 1Mx1 1Mx4 1Mx4 1Mx4

EDI8M8512L

Contextual Info: ^EDI Packaging Cross Reference Electronic Designs Inc. by Part Number No. Pins 31 40 31 40 26 52 TBD 36 TBD 36 TBD TBD TBD TBD 26 52 26 52 25 28 27 32 25 28 27 32 78 20 16 20/26 1 18 18 20 16 20/26 18 20 16 2026 18 20 16 20/26 4 20 18 20 13 28 76 28 22 28

dram zip 256kx16

Abstract: I8833C
Contextual Info: Electronic Design* Inc. Table of Contents Page Letter from the Table o f Contents . 2

64kx4 DRAM

Abstract: SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256
Contextual Info: EDI8833C/LP/P ^E D I Electronic Designs Inc. High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic u m m Features The EDI8833C/LP/P is a high speed, high perform­ ance, low power, 262,144bit C M O S Static R A M orga­ 32Kx8 bit C M O S Static

synchronous sram

Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
Contextual Info: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK

EDI44256C

Contextual Info: ^EDI Dynamic RAM Selector Guide Electronic D u lg n s Inc. The Industry’s Fastest High Density MIL-STD-883, Paragraph 1.2.1 Compliant Dynamic RAMs In response to the need of our military customers for high-performance, M IL-S TD 883 compliant DRAM s, Electronic Designs