zo 607 MA
Abstract: equivalent ZO 607 transistor zo 607 EC3H04B
Contextual Info: Ordering number : ENN6577 EC3H04B NPN Epitaxial Planar Type Silicon Transistor EC3H04B High-Frequency Low-Noise Amplifier and OSC Applications Features 0.35 0.2 0.25 [EC3H04B] 0.15 0.15 0.05 1 2 3 0.5 1.0 0.4 0.65 • unit : mm 2183 0.05 • Low noise : NF=1.7dB typ f=2GHz .
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enn6577ec3h04be-csp1006-3zo 607 ma+2equivalent zo 607transistor zo 607
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EC3H04B
Abstract: 1652 PS
Contextual Info: 注文コード No. N 6 5 7 7 EC3H04B No. N 6 5 7 7 63000 新 EC3H04B 高周波低雑音増幅 , 発振用 ・低雑音である:NF=1.7dB typ(f=2GHz) 。 ・しゃ断周波数が高い:fT=8GHz typ(VCE=1V) 。 ・低電圧動作。 ・超小型(1006 サイズ)
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EC3H04B
Abstract: ZO 607 MA TA2478
Contextual Info: Ordering number : ENN6577 EC3H04B NPN Epitaxial Planar Type Silicon Transistor EC3H04B High-Frequency Low-Noise Amplifier and OSC Applications Features 0.35 0.2 0.25 [EC3H04B] 0.15 0.15 0.05 1 2 3 0.5 1.0 0.4 0.65 • 0.05 • unit : mm 2183 0.25 • Package Dimensions
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enn6577ec3h04be-csp1006-3zo 607 ma+1ta2478
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smd transistor marking 12W
Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103
Contextual Info: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain,Low Gain,Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・|S21e|2=17dB@2GHz 0.3
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mch400917db2ghzsc-72sc-43+15sc-51o-226sc-71o-126o-92modsmd transistor marking 12wsmd transistor marking 13wsmd type marking 13wspm5001sot89 pnp marking gaec3h04bsmd transistor 12w 52sma42056c 6pinsgd103
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