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    IDEC Corporation ALNE8811-G

    Illuminated Pushbutton 30mm | IDEC Corporation ALNE8811-G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics ALNE8811-G 1
    • 1 $42.38
    • 10 $39.33
    • 100 $37.24
    • 1000 $37.01
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    Mouser Electronics ALNE8811-G
    • 1 $49.09
    • 10 $48.81
    • 100 $47.24
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    RS ALNE8811-G Bulk 1
    • 1 $52.37
    • 10 $48.70
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    IDEC Corporation ALNE8811-R

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    Master Electronics ALNE8811-R
    • 1 $57.84
    • 10 $49.85
    • 100 $44.36
    • 1000 $43.70
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    Mouser Electronics ALNE8811-R
    • 1 $56.41
    • 10 $53.27
    • 100 $48.76
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    RS ALNE8811-R Bulk 1
    • 1 $58.80
    • 10 $54.10
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    IDEC Corporation ALNE8811-W

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    Master Electronics ALNE8811-W
    • 1 $57.84
    • 10 $49.85
    • 100 $44.36
    • 1000 $43.70
    • 10000 $43.70
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    Mouser Electronics ALNE8811-W
    • 1 $56.41
    • 10 $53.27
    • 100 $48.76
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    RS ALNE8811-W Bulk 1
    • 1 $57.54
    • 10 $52.94
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    Carling Technologies VEB2E881-198MH-100

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    Master Electronics VEB2E881-198MH-100
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    RS VEB2E881-198MH-100 Bulk 8 Weeks 100
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    • 100 $21.12
    • 1000 $21.12
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    Sager VEB2E881-198MH-100 1
    • 1 $25.69
    • 10 $23.52
    • 100 $17.58
    • 1000 $17.04
    • 10000 $17.04
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    Carling Technologies VEB2E881-19848-1DG

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    Master Electronics VEB2E881-19848-1DG
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    • 100 $17.08
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    RS VEB2E881-19848-1DG Bulk 8 Weeks 100
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    • 100 $21.74
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    Sager VEB2E881-19848-1DG 1
    • 1 $26.46
    • 10 $24.22
    • 100 $18.10
    • 1000 $17.55
    • 10000 $17.55
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    E8811 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    E8811

    Contextual Info: E8811-GaAIAs Infrared Emitting Diode Description T he H E8811 is a G aA IA s in fra red em ittin g d io d e w ith a d o u b le h etero ju n ctio n stru ctu re . It is h igh brightness, high output pow er and fast response m ake it suitable as a light source in m easuring instrum ents


    OCR Scan     		he8811--------gaaiase8811he8811 PDF

    HL7801

    Abstract: HL7806
    Contextual Info: §2. Chip Structures 2.1 Laser Diodes Structures 2.1.1 GaAlAs LD Structure The p-type active layer, in which stimulated emission enforces optical amplification figure 2-1 (a , is processed first. The p-n junction is made here for injecting minority carriers (the p-n heterojunction).


    OCR Scan     		hl7801hl7806 PDF

    giga Ethernet PHY RGMII

    Abstract: 88E1111 GMII config giga pc MOTHERBOARD pcb diagram schematic S29GL256N11TFIV2 marvel phy 88e1111 reference design MPC8568 88E1111 PHY registers map 88E1111 S29GL256N11TFI020 usb to rj45 extenders
    Contextual Info: MPC8568E MDS Processor Board User’s Guide Rev. 0.3 06/2007 MPC8568E MDS Processor Board, Rev. 0.3 Freescale Semiconductor Chapter 1 General Information 1.1 Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		mpc8568egiga ethernet phy rgmii88e1111 gmii configgiga pc motherboard pcb diagram schematic+7s29gl256n11tfiv2marvel phy 88e1111 reference designmpc856888e1111 phy registers map88e1111s29gl256n11tfi020usb to rj45 extenders PDF

    HL7806

    Abstract: L8311 mb 428 ic data HLP30RGD E8811 ART106 HLP30RG HL7836
    Contextual Info: §4. Fundamental Characteristics 4.1 LD Fundamental Characteristics 4.1.1 Light vs. Current Characteristics under CW Operation One of the fundamental parameters o f LDs is optical-output-power vs. forward-current light vs. current characteristic. Figure 4-1 shows a measuring setup for light vs. current characteristic under CW operation.


    OCR Scan     		hl7806l8311mb 428 ic datahlp30rgd+4e8811art106hlp30rghl7836 PDF