DS3177 Search Results

Contextual Info: PRODUCT BRIEF DS3177 DS3/E3 Single-Chip Transceiver FEATURES GENERAL DESCRIPTION The DS3177 combines a DS3/E3 framer and an LIU single-chip transceiver to interface to a DS3/E3 physical copper line. • •  APPLICATIONS  Routers and Switches Multiservice Access

Contextual Info: PRODUCT BRIEF DS3177 DS3/E3 Single-Chip Transceiver FEATURES GENERAL DESCRIPTION The DS3177 combines a DS3/E3 framer and an LIU single-chip transceiver to interface to a DS3/E3 physical copper line. APPLICATIONS Access Concentrators Routers and Switches

DMN26D0UFB4

Abstract: DMN26D0UFB4-7B "MARKING CODE M1"
Contextual Info: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.05V max

sd12

Contextual Info: SD12 1 CHANNEL UNIDIRECTIONAL TVS Features Mechanical Data • 350 Watts Peak Pulse Power tp = 8x20 s • • IEC 61000-4-2 (ESD): Air – 30kV, Contact – 30kV • • IEC 61000-4-2 (ESD), HBM – 16kV ADVANCED INFORMATION • Case: SOD323 Case Material: Molded Plastic, "Green" Molding Compound. UL

N4468LS

Abstract: n4468 N4468L dmn4468lss
Contextual Info: DMN4468LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 14mΩ @ VGS = 10V 10A 20mΩ @ VGS = 4.5V 8A • • • • • • • 30V Description and Applications Mechanical Data

DMN26D0UFB4

Abstract: "MARKING CODE M1" DFN1006H4-3
Contextual Info: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.2V max

SBR05M60BLP

Contextual Info: SBR05M60BLP 0.5A SBR BRIDGE SUPER BARRIER RECTIFIER Features Mechanical Data • • • • • • • • • Ultra Low Leakage Current Excellent High Temperature Stability Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability 150ºC Operating Junction Temperature

N4468LS

Contextual Info: DMN4468LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 14mΩ @ VGS = 10V 10A 20mΩ @ VGS = 4.5V 8A • • • • • • • N EW PRODU CT 30V Mechanical Data Description and Applications

max14574

Abstract: MAX1786 MAX1788 MAX8899 DS1849 MAX16908 MAX4967 DS3610 max17018 max13487
Contextual Info: Monitor Reports by Product: 1. Find the product of interest in the table below. Note the process and/or package for that product. 2. Use the "Back" button to return to the home page. 3. Select the process in the "Process Reliability" for the product of interest.

N4468LS

Abstract: n4468 DMN4468LSS N4468L DMN4468LSS-13 J-STD-020D 601TEST
Contextual Info: DMN4468LSS N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • Mechanical Data • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

SBR05M

Abstract: SBR05M60BLP DFN3030-4 J-STD-020D
Contextual Info: SBR05M60BLP 0.5A SBR BRIDGE SUPER BARRIER RECTIFIER Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • Mechanical Data • • Ultra Low Leakage Current Excellent High Temperature Stability Patented Super Barrier Rectifier Technology

DMG9926UDM

Abstract: esis power DMG9926UDM-7 J-STD-020D
Contextual Info: DMG9926UDM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • Mechanical Data • • Low Gate Charge Low RDS ON : • 28mΩ @VGS = 4.5V • 32mΩ @VGS = 2.5V •

N4468LS

Abstract: n4468 DMN4468LSS DMN4468LSS-13 J-STD-020D
Contextual Info: DMN4468LSS N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • Mechanical Data • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

DFN1006-2

Abstract: J-STD-020D SBR0240LP-7
Contextual Info: SBR0240LP 0.2A SBR SURFACE MOUNT SUPER BARRIER RECTIFIER Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • Mechanical Data • • Ultra Low Forward Voltage Drop Superior Reverse Avalanche Capability

N4468LS

Contextual Info: DMN4468LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ID max TA = +25°C • Low On-Resistance  Low Input Capacitance 14mΩ @ VGS = 10V 10A  Fast Switching Speed 20mΩ @ VGS = 4.5V 8A    Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2

DMN26D0UFB4-7B

Contextual Info: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) TA = 25°C 3.0Ω @ VGS = 4.5V 240mA 6.0Ω @ VGS = 1.8V 170mA 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

"MARKING CODE M1"

Abstract: DFN1006H4-3 DMN26D0UFB4
Contextual Info: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V

Contextual Info: DMG9926UDM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features N EW PRODU CT • • • • • • Mechanical Data • • Low Gate Charge Low RDS ON : • 28mΩ @VGS = 4.5V • 32mΩ @VGS = 2.5V • 40mΩ @VGS = 1.8V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3)

Contextual Info: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) TA = 25°C 3.0Ω @ VGS = 4.5V 240mA 6.0Ω @ VGS = 1.8V 170mA 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching