DPG10I200PA Search Results
DPG10I200PA Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| DPG10I200PA | IXYS | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE HI PERF 200V 10A TO220AC | Original | 5 |
DPG10I200PA Price and Stock
IXYS Corporation DPG10I200PADiode: rectifying; THT; 200V; 10A; Ifsm: 140A; TO220AC; tube; 65W |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DPG10I200PA | 185 | 1 |
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DPG10I200PA | 185 | 40 |
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DPG10I200PA |
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DPG10I200PA | Tube | 50 |
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Littelfuse Inc DPG10I200PAPower Diode Discretes-Fred To-220Ac/ Tub; |Littelfuse DPG10I200PA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DPG10I200PA | Bulk | 50 |
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DPG10I200PA | Bulk | 8 Weeks | 50 |
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DPG10I200PA |
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DPG10I200PA | 500 |
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DPG10I200PA Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: DPG10I200PA HiPerFRED² VRRM = 200 V I FAV = 10 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG10I200PA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips |
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dpg10i200pao-220antisatu1060747and+1 | |
t 3866 power transistor
Abstract: t 3866 t 3866 transistor DPG10I200PA DPG10I200PM
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60747and20090323at 3866 power transistort 3866+3 | |
irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
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element-14f155-6af155-10af165-15a+11 | |
DPG10I200PAContextual Info: DPG 10 I 200 PM V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 10 A 35 ns Part number 3 1 Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current |
Original |
60747and20090323adpg10i200pa | |
DPG10I200PAContextual Info: DSEP 8-02A HiPerFREDTM Epitaxial Diode IFAV = 8 A VRRM = 200 V trr = 25 ns with soft recovery Preliminary Data VRSM VRRM V V 200 200 Type C A TO-220 AC C DSEP 8-02A A C TAB D4 Test Conditions IFRMS IFAVM TC = 150°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine |
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o-220dpg10i200pa20080317a | |
DPG10I200PAContextual Info: DPG 10 I 200 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 10 A 35 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current |
Original |
60747and20090323adpg10i200pa | |
DPG10I200PA
Abstract: DPG10I200PM
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dpg10i200pmo-220fpantis0060747and+2 | |
DPG10I200PM
Abstract: DPG10I200PA a85a
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60747and20090323adpg10i200pmdpg10i200pa+1 |