DMN3032LE Search Results
DMN3032LE Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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DMN3032LE-13 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 5.6A SOT223 | Original | 6 |
DMN3032LE Price and Stock
Diodes Incorporated DMN3032LE-13MOSFET N-CH 30V 5.6A SOT223 |
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DMN3032LE-13 | Cut Tape | 38,178 | 1 |
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DMN3032LE-13 | Reel | 12 Weeks | 2,500 |
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DMN3032LE-13 | 18,998 |
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DMN3032LE-13 | 527,200 | 12 Weeks | 1,038 |
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DMN3032LE-13 | Cut Tape | 2,883 | 1 |
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DMN3032LE-13 | 1,262 | 1 |
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DMN3032LE-13 | 12 Weeks | 2,500 |
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DMN3032LE-13 | 14 Weeks | 2,500 |
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DMN3032LE-13 | 72,500 |
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DMN3032LE-13 | 302,262 |
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DMN3032LE-13 | 60,000 |
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Zetex / Diodes Inc DMN3032LE-13Trans MOSFET N-CH 30V 5.6A 4-Pin(3+Tab) SOT-223 T/R |
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DMN3032LE-13 | 20,000 | 2,500 |
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Diodes Incorporated DMN3032LE13AVAILABLE EU |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DMN3032LE13 | 131,250 |
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DMN3032LE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DMN3032LE 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ID RDS(on) max 30V NEW PRODUCT Features and Benefits TA = +25°C 29mΩ @ VGS = 10V 5.6A 35mΩ @ VGS = 4.5V 4.8A • Low On-Resistance Low Input Capacitance Fast Switching Speed |
Original |
DMN3032LE AEC-Q101 DS36695 | |
Contextual Info: DMN3032LE 30V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary V BR DSS RDS(on) max 30V 29mΩ @ VGS = 10V 35mΩ @ VGS = 4.5V Features and Benefits ID TA = +25°C 5.6A 4.8A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching |
Original |
DMN3032LE AEC-Q101 DS36695 | |
AP3039AM
Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
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2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 |