DMN10H220L Search Results

Contextual Info: DMN10H220LE 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT NEW PRODUCT Product Summary V BR DSS RDS(on) max 100V 220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V Features and Benefits ID TA = +25°C 2.3A 2.1A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching

Contextual Info: DMN10H220L 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = +25°C 220mΩ @ VGS = 10V 1.6A 250mΩ @ VGS = 4.5V 1.3A NEW PRODUCT 100V Low On-Resistance Low Input Capacitance

Contextual Info: DMN10H220LE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Low On-Resistance • Low Input Capacitance 220mΩ @ VGS = 10V 2.3A • Fast Switching Speed 250mΩ @ VGS = 4.5V 2.1A • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Contextual Info: DMN10H220L 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS NEW PRODUCT 100V Features and Benefits •       ID RDS(on) max TA = +25°C 220mΩ @ VGS = 10V 1.6A 250mΩ @ VGS = 4.5V 1.3A Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

DMN63D8L

Contextual Info: DATE: 1st June, 2015 PCN #: 2156 PCN Title: Qualification of "Diodes Technology Cheng Du Company Limited" (CAT) as an Additional Assembly & Test Site for Discrete Products and Conversion to Copper Bond Wire on Select Discrete Products at

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)