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    DMG6301UDW Datasheets (2)

    Diodes Incorporated
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    DMG6301UDW-13
    		Diodes Incorporated Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 25V 0.24A SOT363 Original PDF 266.39KB
    DMG6301UDW-7
    		Diodes Incorporated FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 25V 240MA SOT363 Original PDF 6
    SF Impression Pixel

    DMG6301UDW Price and Stock

    Diodes Incorporated

    Diodes Incorporated DMG6301UDW-13

    Transistor: N-MOSFET; unipolar; 25V; 190mA; Idm: 1.5A; 370mW; SOT363
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME DMG6301UDW-13 10,000
    • 1 -
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    • 10000 $0.06
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    Avnet Americas DMG6301UDW-13 Tape & Reel 40 Weeks 10,000
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    • 10000 $0.05
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    Mouser Electronics DMG6301UDW-13
    • 1 $0.47
    • 10 $0.27
    • 100 $0.19
    • 1000 $0.16
    • 10000 $0.08
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    Avnet Silica DMG6301UDW-13 54 Weeks 10,000
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    Win Source Electronics DMG6301UDW-13 20,000
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    • 100 $3.32
    • 1000 $2.98
    • 10000 $2.98
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    Diodes Incorporated DMG6301UDW-7

    Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W; SOT363; ESD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME DMG6301UDW-7 1
    • 1 $0.34
    • 10 $0.20
    • 100 $0.13
    • 1000 $0.08
    • 10000 $0.05
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    Avnet Americas DMG6301UDW-7 Tape & Reel 44 Weeks 3,000
    • 1 -
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    Mouser Electronics DMG6301UDW-7
    • 1 $0.47
    • 10 $0.27
    • 100 $0.19
    • 1000 $0.16
    • 10000 $0.09
    		Get Quote
    Newark DMG6301UDW-7 Tape & Reel 3,000
    • 1 -
    • 10 -
    • 100 -
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    • 10000 $0.05
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    Avnet Silica DMG6301UDW-7 42 Weeks 3,000
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    Vyrian DMG6301UDW-7 11,058
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    Win Source Electronics DMG6301UDW-7 18,730
    • 1 -
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    • 1000 $0.23
    • 10000 $0.20
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    DMG6301UDW Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: DMG6301UDW 25V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features V BR DSS RDS(ON) 25V 4Ω @ VGS = 4.5V 5Ω @ VGS = 2.7V ID TA = +25°C 0.24A 0.22A Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching


    Original     		dmg6301udwds36288 PDF

    DMN63D8L

    Contextual Info: DATE: 1st June, 2015 PCN #: 2156 PCN Title: Qualification of "Diodes Technology Cheng Du Company Limited" (CAT) as an Additional Assembly & Test Site for Discrete Products and Conversion to Copper Bond Wire on Select Discrete Products at


    Original     		1n4448wbzt52c2v4bzt52c51bzt52c13+4bzt52b4v7d1213adic-034dmn63d8l PDF

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		2000/53/ec2002/95/ec2011/65/eusor/2014-254+12sj/t11363-2006gl-106ap3039am12sn7az1117eh-3ap3031kzabg6001smbj11caztx689dmn33d8lap1901ap3502 PDF