DM2G150SH6NE Search Results

DM2G150SH6NE Price and Stock

Filter by Manufacturer

Dawin Electronics Co Ltd


Dawin Electronics Co Ltd DM2G150SH6NE High Power Rugged Type IGBT Module Insulated Gate Bipolar Transistor, 175A I(C), 600V V(BR)CES, N-Channel
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	DM2G150SH6NE		24			1 - 10 - 100 - 1000 - 10000 -	Get Quote

DM2G150SH6NE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
DM2G150SH6N Abstract: DM2G150SH6NE Contextual Info: D W DAWIN Electronics TM DM2G150SH6NE Nov. 2010 High Power Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN’S IGBT module devices are optim ized to reduce losses and switching noise in high frequency power conditioning electrical systems.	Original	DM2G150SH6NE DM2G150SH6N DM2G150SH6NE	PDF

Catalog Datasheet

Type

Document Tags

PDF

DM2G150SH6N

Abstract: DM2G150SH6NE
Contextual Info: D W DAWIN Electronics TM DM2G150SH6NE Nov. 2010 High Power Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN’S IGBT module devices are optim ized to reduce losses and switching noise in high frequency power conditioning electrical systems.

Original

DM2G150SH6NE DM2G150SH6N DM2G150SH6NE

PDF