DF2S16FS Search Results

DF2S16FS

Contextual Info: DF2S16FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S16FS Product for Use Only as Protection against Electrostatic Discharge ESD . Unit: mm Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C

Contextual Info: DF2S16FS ESD Protection Diodes Silicon Epitaxial Planar DF2S16FS 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.

Contextual Info: DF2S16FS ESD Protection Diodes Silicon Epitaxial Planar DF2S16FS 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.

1-1L1A

Contextual Info: DF2S16FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S16FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C Characteristic Symbol Power dissipation Rating P* Junction temperature Storage temperature range Unit

DF2S16FS

Contextual Info: DF2S16FS 東芝ＥＳＤ保護用ダイオード DF2S16FS ○ ESD 保護用 単位: mm ※本製品はＥＳＤ保護用ダイオードでありＥＳＤ保護用以外の用途 定電圧ダイオード用途を含むがこれに限らない には使用はできません。

DF2S16FS

Contextual Info: DF2S16FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S16FS Diodes for Protecting against ESD Unit: mm 0.07M A Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C

Contextual Info: DF2S16FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S16FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150

Contextual Info: DF2S16FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S16FS Product for Use Only as Protection against Electrostatic Discharge ESD . Unit: mm Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C

Contextual Info: DF2S16FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S16FS Product for Use Only as Protection against Electrostatic Discharge ESD . Unit: mm 0.6±0.05 Characteristic Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150

Contextual Info: DF2S16FS ESD Protection Diodes Silicon Epitaxial Planar DF2S16FS 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.

Contextual Info: DF2S16FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S16FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150

Contextual Info: DF2S16FS TOSHIBA Diodes for Protecting against ESD DF2S16FS Product for Use Only as Protection against Electrostatic Discharge ESD . Unit: mm *This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation,

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

LT 543 common cathode

Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current

TPCA*8030

Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S

CMZB220

Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード

DF2S6.8FS

Abstract: DF6A6.8FU DF3A8.2FU DF2S12FS DF2S12FU DF2S16FS SC-81 DF3A3.3FE esm 231 DF2S5.6FS
Contextual Info: 新製品ガイド 2004-9 東芝半導体 新製品ガイド ESD 保護用ダイオード semiconductor 2004 http://www.semicon.toshiba.co.jp/ ESD保護用ダイオード ＥＳＤ保護用ダイオードとは！ インターフェイスなどから侵入する静電気（ＥＳＤ）を吸収し

CMG03

Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A

2fu smd transistor

Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

DF2S3.6SC

Abstract: CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

smd diode Lz zener

Abstract: CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2011/9 SCE0004L Rectifiers General-Purpose Rectifiers Average Forward Current A