DDD35 Search Results

Contextual Info: SOLITRON DEVICES INC ^rniitron 4ßE D devices.inc. m MfrS# a K A fi& i'a « ® » :'W e S & s ß3bflbGE DDD35Ö7 TIS « S O D PH yyyu a <ü a 1 ailOQ P-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Volt. l VDSS Drain-Gate Voltage

Contextual Info: FUJITSU MICROELECTRONICS 7ñ » e| 37^,:î7b2 DDD35MS b F U J IT S U M O S M e m o rie s M B 81C 68-45-W , M B 8 1 C 6 8 -5 5 -W CMOS 16,384-Bit Static Random Access Memory With Automatic Power Down D e s c rip tio n The Fujitsu M B81C68 Is a 4,096 word x 4-bit static random access

Shared resource arbitration

Contextual Info: miMHS PRELIMINARY March 1994 L 67005 DATA SHEET 8 KX 8 CMOS DUAL PORT RAM 3.3 VOLT FEATURES VERSATILE PIN SELECT FOR MASTER OR SLAVE: - M/S= H FOR BUSY OUTPUT FLAG ON MASTER - M/S = L FOR BUSY INPUT FLAG ON SLAVE INT FLAG FOR PORT TO PORT COMMUNICATION FULL HARDWARE SUPPORT OF SEMAPHORE

Contextual Info: DIXYS High Power Diode Modules MDD220 IFRMS 2 x 450 A FAVM 2 x 270 A V RRM VRSM V RRM V V 900 1300 1500 1700 800 1200 1400 1600 Type MDD 220-08N1 MDD 220-12N1 MDD 220-14N1 MDD 220-16N1 Symbol Test Conditions ^FRMS TVJ = T' VJM Tc = 100°C; 180° sine ^FAVM

593a

Contextual Info: SN74ALVC7805 256x18 LOW-POWER CLOCKED FIRST-IN, FIRST-OUT MEMORY SC AS 593A-O C TO BER 1 9 9 7 - REVISED APRIL 1998 DL PACKAGE TOP VIEW Member of the Texas Instruments Widebus Family Low-Power Advanced CMOS Technology Operates From 3-V to 3.6-V RESET [ 1

Contextual Info: 3 L □ 20 ns Worst-Case M ultiply Time □ Low Power CMOS Technology □ Replaces TRW M PY016/TM C216, Cypress CY7C516, IDT 7216L, and AM D Am29516 □ Tw o's Complement, Unsigned, or Mixed Operands □ Three-State Outputs □ DESC SM D No. 5962-86873 □ Available 100% Screened to

Contextual Info: SUPERTEX INC blE D 07732^5 0GG3S3S ^ 3 HV21 &k S u p e rte x in c. 8-Channel High Voltage Analog Switch Ordering Information Package Options V p p -vNN 24-pin ceramic* side-brazed DIP 140V HV2114C 160V HV2116C 24-pin plastic DIP 28-lead plastic chip carrier

ttl fujisu

Abstract: fujitsu oscillator M2 TYN 208 equivalent B9007 MB90075-PF
Contextual Info: FUJITSU LTP S3E D 374R75b 0003234 2T0 * 7 ^ 7 March 1992 Editton 1.0 DATA SHEET FUJITSU MB90075 ONSCREEN DISPLAY CONTROLLER FOR NTSC/PAL DESCRIPTION The MB90075 CMOS On-screen Display Controller OSDC is a peripheral LSI that displays 288 alphanumeric character« (24 rowsx 12Gnes) and figures onTVscreenbyamicrooontroller.

Contextual Info: pMC-Sierra, Inc. PM7323 RCMP-200 P r e l im in a r y I n f o r m a t io n is su e 1 ROUTING CONTROL, MONITORING AND POUCING 200 Mbps FEA TU R ES • Monolithic single chip device which handles ATM switch Ingress VPI/VCI address translation, cell appending, cell rate policing, counting, and OAM requirements

Contextual Info: Standard male, 3 row 42 + 6 8609 series, style M Catalogue numbers - standard items No of contacts Contact arrang. Contact termination Performance class / plating: • DIN 41612 class III: replace x by 4 in part number. • DIN 41612 class II: replace x by 5 in part number.

Contextual Info: Standard female, 3 row 42 + 6 8609 series, style M Catalogue numbers - standard items Performance class / p la tin g : • DIN 41612 class III: replace x by 4 in cart number. • DIN 41612 class II: replace x by 5 in part number. • DIN 41612 class I : replace x by 6

Contextual Info: DIN 4i 6iI 2 ' Standard female, 3 row 60 + 4 8609 series, style M Catalogue numbers - standard items Performance class / plating: • DIN 41612 class III: replace x by 4 in part number. • DIN 41612 class I I : replace x by 5 in part number. • DIN 41612 class I : replace x by 6

Contextual Info: DIN 41612 * # * * Reverse female, 3 row 24 + 8 8609 series, style M Catalogue numbers - standard items No of contacts Contact arrang. Performance class / plating: Contact termination • DIN 41612 class III: replace x by 4 in part number. • DIN 41612 class II: replace x by 5 in part number.

Contextual Info: Standard female, 3 row 24 + 8 8609 series, style M Performance class / plating : • DIN 41612 class III: replace x by 4 in part number. • DIN 41612 class II: replace x by 5 in part number. • DIN 41612 class I : replace x by 6 in part number. Contact plating : selective gold over

M890075

Abstract: MB90075 MB90075-P-SH wd900 347S
Contextual Info: • / +1 m * §£ m I !§ 3 8 52 <o § . IP s I U - i 11 II I N b | N) § ö „ Co ? 1» • < § 3 P 5 1 M îï I' S! :d ►o ÎCÔ O •u ti II ¿O I8 % I à i i T| r- #■ £ G vi sj \ £ \ 4 52-33-47~ M B 90075 FEA TU RES (Continued) • V fo o Output

S3 TRIO 64

Contextual Info: Standard female, 3 row 7 8 + 2 85 8609 series, style M o -0 .2 3.346 8. 5-0.1 (.118) (.3 35) *n r r ' 02,8 (.n o ; Vnr m jm r iw r n m im iim ir mini 90 CD TIT 1 (3.543) o o b c (25x.100 = 2.500) 25X2. 54= S3.5 * 7 3 .6 6 9 5 max/ (2.900) (3 .7 4 0 m ax)

Contextual Info: Reverse male press fit, 3 row 8609 series, extended DIN Catalogue numbers - standard items No of contacts Contact arrang. Contact termination Contact termination 150 100 120 80 i i * * i- 1 : : : : I* a a a a p c ,\ a1 a*•-* .1-a ■ la /a a a a lb

Contextual Info: M O SEL V IT E L IC V53C16125H HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE PRELIMINARY 40 45 50 60 Max. RAS Access Time, tp,AC 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA) 20 ns 22 ns 24 ns 30 ns Min. Fast Page Mode Cycle Time, (tPC)

400M

Abstract: DDD3571 QS4A201Q
Contextual Info: * • Q S4A 201Q PR ELIM INA R Y Ô High-Performance CMOS Analog 10-Channel Bus Exchange FEATU RES • Low On-resistance: rDs on = 5ft • Fast transition time: trRAN = 6 ns • Wide bandwidth: 1.3 GHz (-3 dB point) • Crosstalk: -9 0 dB @ 50 KHz, -30dB @ 30 MHz

HV1814C

Abstract: HV1814CS HV1814P HV1814PJ HV1814X HV1816C
Contextual Info: SUPERTEX blE D INC • 07732^5 0G03527 0*17 « S T X HV18 ^ S u p e r t e x in c . 8-Channel High Voltage Analog Switch Ordering Information_ _ Package Options 0. a > V nn VsiQ 28-pin Ceramic Side-brazed DIP* Die 36-pin Leaded Ceramic Chip Carrier*

DDD351

Contextual Info: EPSON PF468-08 E0C6281 4-bit Single Chip Microcomputer • Core CPU Architecture • SVD Circuit/Comparator • Melody Circuit I DESCRIPTION The E0C6281 is an advanced single-chip CMOS 4-bit microcomputer consisting of the E0C6200 CMOS 4-bit core CPU. It also contains the ROM, RAM, LCD driver, time base counter and melody generation circuit.

Contextual Info: ELH0032G/883/8001301ZX F eatu res G eneral D escrip tion • • • • • • • The ELH0032 is a high slew rate, high input impedance differ­ ential operational amplifier suitable for diverse application in fast signal handling. The high allowable differential input volt­

YF105

Contextual Info: □IXYS Three Phase Rectifier Bridge VUB 60 with IGBT and Fast Recovery Diode for Braking System V RRM V RRM I 1200-1600 V 70 A dAVM Type V VUB 6 0 -1 2 N01 VUB 6 0 -1 6 NOI 1200 1600 Symbol Test Conditions Maximum Ratings 1200/1600 59 70 V A A T, 45°C, t : 10 ms, VR= 0 V

IN2804

Contextual Info: HYM539400 M-Series •HYUNDAI 4M X 39-bit CMOS DRAM MODULE DESCRIPTION The HYM539400 is a 4M x 39-bit Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0. 22,1/ F decoupling capacitor is mounted for each DRAM.