DB22320 Search Results

DB2132000L

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB21320 Silicon epitaxial planar type For rectification DB22320 in SMini2 type package • Features  Package  Low forward voltage VF and small reverse current IR  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB22320 (Tentative) Silicon epitaxial planar type For rectification • Packaging  Package Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Code Mini2-F4-B  Pin Name

DB22320

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB22320 Silicon epitaxial planar type For rectification • Features  Package  Low forward voltage VF and small reverse current IR  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB21320 Silicon epitaxial planar type For rectification DB22320 in SMini2 type package • Features  Package  Low forward voltage VF and small reverse current IR  Contributes to miniaturization of sets, reduction of component count.

00E-6

Abstract: DB22320
Contextual Info: DB22320 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DB22320 Product type: Schottky Barrier Diode Parameters *$ *DEVICE=DB22320,D * DB22320 D model .MODEL DB22320 D + IS=11.7028E-6 + N=1.04 + RS=44.296E-3 + IKF=1.05307 + CJO=299.90E-12

Contextual Info: Doc No. TT4-EA-12656 Revision. 3 Product Standards Schottky Barrier Diode DB2232000L DB2232000L Silicon epitaxial planar type Unit: mm 1.6 For rectification 0.13 2 • Features 2.6 3.5  Low forward voltage VF  Small reverse leakage current  Halogen-free / RoHS compliant

DB21320

Abstract: DB22320
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB21320 Silicon epitaxial planar type For rectification DB22320 in SMini2 type package • Features  Package  Low forward voltage VF and small reverse current IR  Contributes to miniaturization of sets, reduction of component count.

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MN864779

Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
Contextual Info: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.