D1G Search Results

d1g1

Contextual Info: THE POSSIBILITIES ARE INFINITE FUJITSU MEDIA DEVICES LIMITED Customer Name STANDARD System AMPS/CDMA/TDMA SAW Duplexer DATE FMD P/N FAR-D5CM-881M50-D1G1 Version 2.0b Customer P/N Mar.26.2003 Preliminary Reference No. Table 1 Electrical Specification Condition

Contextual Info: r w \T ^ r r I N C O R P O R A T E D1G - D7G 1.0A GLASS PASSIVATED RECTIFIER D Features • • • • • Glass Passivated Die Construction Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Plastic Material: UL Flammability

Contextual Info: D1G - D7G VISHAY 1.0A GLASS PASSIVATED RECTIFIER / l Ï t e m Î t I POWER SEHCONNJCTOR/ Features Glass Passivated Die Construction Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 3QA Peak Plastic Material: UL Flammability

Contextual Info: LITE ? I SEMICONDUCTORS D1G thru D7G V O LTA G E RANGE 50 to 1000 Volts C U R R EN T 1.0 Ampere T-1 FEATURES • Glass passivated c h ip • L o w leakage •103 0 6 .067' 2,2) o L o w fo rw a rd voltage d ro p • H igh c u rre n t c a p a b ility •

H63A

Abstract: YHP4191 YHP4191A 5rht
Contextual Info: Issue NO. ft fí : 2 0 0 4 ÍP 9 M 9 B B Bate Of Is s u e t i c l -0 4087 : % ít E 9ï Classification: September 09,2004 _ /i7i/vl • New i—\ «—i LJ Change L_i Renewal D1GI-KEY m a ft at m PRODUCT SPECIFICATION FOR INFORMATION L ñ o L L . m m : C H IP IN D U C T O R

Contextual Info: LITE-ON SEMICONDUCTOR D1G thru D7G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Amperes MINIATURE GLASS PASSIVATED RECTIFIERS T-1 FEATURES Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability Plastic material has UL flammability classification 94V-0

Contextual Info: LITE-ON SEMICONDUCTOR D1G thru D7G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Amperes MINIATURE GLASS PASSIVATED RECTIFIERS T-1 FEATURES Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability A A B

Contextual Info: LITE ON POWER SEMICONDUCTOR D1G thru D7G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Amperes MINIATURE GLASS PASSIVATED RECTIFIERS T-1 FEATURES Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability

Contextual Info: P R O G R A M M A B LE SYN C H R O /R ESO LVER TO-D1G1TAL C O N VE R TE R FEATURES DESCRIPTION The SDC-14580 series are versatile state-of-the-art synch ro-to-digital S/D converters featuring programmable resolution and a velocity output voltage. Based on the popular SDC-14560

TC59WM803BFT

Abstract: THMD1GE2SB70
Contextual Info: TOSHIBA THM D1GE2SB70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The D1GE2SB is a 134,217,728-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 36 TC59WM803BFT DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: D1G-D7G 1.0A GLASS PASSIVATED RECTIFIER Features_ • • • • • Glass Passivated Die Construction Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Plastic Material: UL Flammability

Contextual Info: D1G - D7G 1.0A GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Plastic Material: UL Flammability Classification Rating 94V-0

Contextual Info: D1G–D7G Vishay Lite–On Power Semiconductor 1.0A Glass Passivated Rectifier Features D Glass passivated die construction D Diffused junction D High current capability and low forward voltage drop D Surge overload rating to 30A peak D Plastic material – UL Recognition

Contextual Info: LITE-ON SEMICONDUCTOR D1G thru D7G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Amperes MINIATURE GLASS PASSIVATED RECTIFIERS T-1 FEATURES Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability A A B

marking D3G

Abstract: d1gd
Contextual Info: D1G - D7G 1.0A GLASS PASSIVATED RECTIFIER POWER SEMICONDUCTOR Features • • • • • Glass Passivated Die Construction Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Plastic Material: UL Flammability

Contextual Info: D1G-D7G 1.0A GLASS PASSIVATED RECTIFIER LITEM ZI y POWER SEMICONDUCTOR Features Glass Passivated Die Construction Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Plastic Material: UL Flammability Classification Rating 94V-0

diode G1

Abstract: duplexer d1g1 FAR equivalent rx -2 -6 FAR-D5CM-881M50-D1G1 FAR-D5CM-881M50-D1G2
Contextual Info: THE POSSIBILITIES ARE INFINITE 5mm sq. SAW Duplexer D5CM March 12, 2003 Version(1.0) 5.0 x 5.0 x 1.5 (1.7max) mm FAR-D5CM-881M50-D1G1 FAR-D5CM-881M50-D1G2 ANT ANT Tx Pin 1 Index F G1 Rx Rx Pin 1 Index Top VIEW F G2 Tx

Contextual Info: D1G - D7G 1.0A GLASS PASSIVATED RECTIFIER Features and Benefits Mechanical Data • • • • • • • • • • • • Glass Passivated Die Construction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Lead Free Finish, RoHS Compliant Note 1

Contextual Info: lu e :*:; I S E M I C O N D U C T O R S D1G thru D7G V O LTA G E RANGE 1 amp MiNiATum G la s s 1 PASSIVATEDJUNCTlON PLASTIC $ SILICON RECTIFIERS 50 to 1000 Volts CU RREN T 1.0 Ampere T -1 FEATURES • G lass p a s s iv a te d c h ip • L o w le a ka g e .103 a 6|

bd135 equivalent

Abstract: irt 840 1509-50 TP3062 J890 bd135 N rBE BD135 BD135 35 W 960 MHz RF POWER TRANSISTOR NPN BD135 TRANSISTOR
Contextual Info: MOTOROLA SC XSTRS/R F b=)E D b3b7254 D1GDT0G 172 noT b MOTOROLA I SEMICONDUCTOR • ■ TECHNICAL DATA The RF Line U H F P o w er Tkransistor The TP3062 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold

FAR-D5CM-881M50-D1G1

Contextual Info: THE POSSIBILITIES ARE INFINITE FUJITSU MEDIA DEVICES LIMITED Customer Name STANDARD System AMPS/CDMA/TDMA SAW Duplexer DATE FMD P/N FAR-D5CM-881M50-D1G1 Version 2.0b Customer P/N Mar.26.2003 Reference No. Table 1 Electrical Specification Condition FMD Current proposal

st 074c

Abstract: 1 microfarad capacitor TSC7136 maxim ICL7136 TLC7136C
Contextual Info: TEXAS INSTR Î L I N / I N T F O 8961724 TEXAS IN STR D E ^ 0^^1754 □□74T75 0 L IN /I NT FC PRODUCT PREVIEW 9 1 D 74 9 7 5 TLC7136C Advanced LinCMOS 3 1/2 D1GIT PRECISION ANALOG-TO-DIGITAL CONVERTER AND LCD DRIVER D 2 84 9, O C TO BER 1986 ADVANCED LlnCMOS™ Technology

CA5900

Contextual Info: MOTOROLA SC CXSTRS/R b3b?2S4 F D1G1QOS 4G3 noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA CA5900 CA5900S The RF Line Wideband Linear Am plifiers . . . designed for amplifier applications in 50 to 100 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain stability with

D1G133-AB39-52

Abstract: M1G074-BF O112 500-0210
Contextual Info: EC centrifugal fan D1G133-AB39-52 forward curved, dual inlet with housing without flange ebm-papst Mulfingen GmbH & Co. KG Bachmühle 2 D-74673 Mulfingen Phone +49 7938 81-0 Fax +49 7938 81-110 info1@de.ebmpapst.com www.ebmpapst.com Nominal data Type D1G133-AB39-52