D1028 Search Results

D1028UK

Abstract: siemens plc 300w rf amplifier uhf EXE18 Storm Products T21N coaxial plc cable EXE18 19/30 S1TW coaxial cable "storm products"
Contextual Info: TetraFET D1028UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

Contextual Info: TetraFET D1028UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN

300w rf amplifier uhf

Contextual Info: Illl TetraFET E^E mi D1028UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 3 0 0 W - 28V -175 M H z PUSH-PULL FEATURES * SIMPLIFIED AMPLIFIER DESIGN * SUITABLE FOR BROAD BAND APPLICATIONS DR PIN 1 SOURCE COMMON

D1028UK

Abstract: siemens 230 90 064R 300w rf amplifier uhf
Contextual Info: TetraFET D1028UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

D1028

Abstract: TO-92L hFE kec KTD1028 D10-28 DSA0010554
Contextual Info: SEMICONDUCTOR D1028 MARKING SPECIFICATION TO-92L PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description 1 Device Name D1028 D1028 2 Lot No. 816 98.06.23 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week 3 KEC K KEC CORP. 4 hFE Grade

D1028UK

Abstract: 064R
Contextual Info: TetraFET D1028UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN

D1028UK

Contextual Info: TetraFET D1028UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

300w rf amplifier uhf

Abstract: D1028UK
Contextual Info: TetraFET D1028UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

300w rf amplifier uhf

Abstract: D1028UK D1028 EXE18
Contextual Info: TetraFET D1028UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

300w rf amplifier uhf

Abstract: D1028UK
Contextual Info: TetraFET D1028UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

Contextual Info: TetraFET D1028UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

300w rf amplifier uhf

Contextual Info: mi TetraFET Étti IN I D1028UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA c G 2 pis A GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W -28V -175M H z PUSH-PULL (ty p ) À p H T D (2 pis) A ▼ (4 pis) FEATURES T T A À t ▼ -▲ ' N ' J M

D1028UK

Contextual Info: nil Vrr r = mi TetraFET D1028UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 3 0 0 W -2 8 V -1 7 5 M H z PUSH-PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DR

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK2487

Abstract: voltage 10v vdss 150v Id 50A mos fet
Contextual Info: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistors 2SK2487 NチャネルパワーMOSFET スイッチング用 2SK2487はNチャネル縦型 パワー MOS FETで，スイッチング特性が優れており，各種スイッチング電源用途に最適

2SK2487

Abstract: MP-88
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK2487

Abstract: nec 2Sk2487
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

CM45-12A

Abstract: 8M0B5 MHW252 CM80-28R BGY41B BFR65 2N6166 blw95 BLY94 MHW1342
Contextual Info: RF Transistors for Broadcast Applications SGS-Thomson 55-108MHz Class C for FM Transmitters and Ctass AB for VHF-TV Band I Config. Package Type CE 2X.450SQ4LFL SD1476" CE 2X.450SQ4LFL SD1476 CE .5004LFL SD1457 CE .5004LFL SD1460 2X.450SQ4LFL CE SD1483 * In development, Class AB Icq = 2 X 400 mA

countersunk torque settings

Abstract: torque settings for metric cap head screws torque settings metric flange D1028UK "RF MOSFETs" COUNTERSUNK SOCKET SCREW tightening torque aluminium torque of 4-40 screw for pcb
Contextual Info: Mounting Guidelines for SEMELAB RF MOSFETS Prepared by: Nick Padfield Introduction The performance of RF MOSFETs can be severely reduced by poor thermal considerations. In today’s market designers are being asked to not only make higher power systems but also make them smaller,

VFD075E43A

Abstract: vfd037e43a VFD055E43A VFD022E21A vfd015e43a delta plc cable pin diagram RS-485 VFD015E21A VFD007E21A delta vfd-e with modbus communication b1031
Contextual Info: 서두 DELTA 의 고성능 VFD-E 시리즈를 선택하여 주신 것에 감사 드립니다. VFD-E 시리즈는 최신의 마이크로 프로세서 기술에 의해 최상의 부품과 자재로 제조되었습니다. 이 매뉴얼은 AC 모터 드라이브의 설치, 파라미터 설정, 문제 해결 및 일일 유지 보수에 사용됩니다.

2SK2488

Abstract: MP-88 2SK2488 equivalent
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2488 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2488 is N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES • Low on-state resistance RDS on = 1.2 Ω MAX. (VGS = 10 V, ID = 5.0 A)

2SK2488

Abstract: IEI-1213 MEI-1202 MF-1134 MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2488 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2488 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES Drain to Source Voltage

EcG ad624

Abstract: AD8293 AD8237ARMZ-R7 AD8237
Contextual Info: FEATURES Gain set with 2 external resistors Can achieve low gain drift at all gains Ideal for battery powered instruments Supply current: 115 µA Rail-to-rail input and output Zero input crossover distortion Designed for excellent dc performance Minimum CMRR: 106 dB

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid