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CURRENT50M Datasheets Context Search
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Contextual Info: SMF15K Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current50m V(RRM)(V) Rep.Pk.Rev. Voltage15k t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)5.0m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage24 @I(FM) (A) (Test Condition)50m |
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SMF15K Current50m Voltage15k Time300n Voltage24 Current250n Current10u StyleAxial-39 | |
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Contextual Info: 3GCRJX Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)600 V(RRM) Max. (V) I(T) Rated Maximum (A)3.0 @Temp. (øC) (Test Condition)25Ï I(TSM) Max. (A)40 @ t(w) (s) (Test Condition) I(GT) Max. (A)50m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current50m |
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Current50m StyleStR-10 | |
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Contextual Info: 3GCREY Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)200 V(RRM) Max. (V) I(T) Rated Maximum (A)3.0 @Temp. (øC) (Test Condition)25Ï I(TSM) Max. (A)40 @ t(w) (s) (Test Condition) I(GT) Max. (A)50m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current50m |
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Current50m StyleStR-10 | |
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Contextual Info: 3GCRHZ Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)400 V(RRM) Max. (V) I(T) Rated Maximum (A)3.0 @Temp. (øC) (Test Condition)25Ï I(TSM) Max. (A)40 @ t(w) (s) (Test Condition) I(GT) Max. (A)50m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current50m |
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Current50m StyleStR-10 | |
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Contextual Info: SSTDPAD50 Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package1 Diodes Per Circuit2 I(F) Max. (A) Forward Current50m V(RRM) (V) Rep.Pk.Rev. Voltage30ó t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition) |
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SSTDPAD50 Current50m Voltage30Ã Current50p | |
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Contextual Info: 1N5220 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current50m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)50m @Temp. (øC) (Test Condition) |
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1N5220 Current50m Voltage30 Current50u | |
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Contextual Info: 1N3287+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current50m V(RRM)(V) Rep.Pk.Rev. Voltage6.0 t(rr) Max.(s) Rev.Rec. Time @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage260m @I(FM) (A) (Test Condition)1.0m |
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1N3287 Current50m Voltage260m Current15u | |
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Contextual Info: PTC207M Diodes Germanium Diode Military/High-RelN I O Max.(A) Output Current50m V(RRM)(V) Rep.Pk.Rev. Voltage60 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500m V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)50m I(RM) Max.(A) Reverse Current500u @V(R) (V)(Test Condition)60 |
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PTC207M Current50m Voltage60 Current500u | |
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Contextual Info: 1N476 Diodes Germanium Diode Military/High-RelN I O Max.(A) Output Current50m V(RRM)(V) Rep.Pk.Rev. Voltage90 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)3.0m I(RM) Max.(A) Reverse Current180u @V(R) (V)(Test Condition)75 |
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1N476 Current50m Voltage90 Current180u nt50m | |
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Contextual Info: PFB15AA100 Thyristors Full Controlled Triple AC Switch Module V RRM Max. (V) V(DRM) Max. (V)1.0k I(T) Rated Maximum (A)15± @Temp. (øC) (Test Condition)77# I(TSM) Max. (A)350 @ t(w) (s) (Test Condition)8.3m I(GT) Max. (A)70m V(GT) Max.(V)3 I(H) Max. (A) Holding Current50m |
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PFB15AA100 Current50mà Current10m HL080HD7 | |
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Contextual Info: SSTDPAD100 Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package1 Diodes Per Circuit2 I(F) Max. (A) Forward Current50m V(RRM) (V) Rep.Pk.Rev. Voltage30ó t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition) |
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SSTDPAD100 Current50m Voltage30Ã Current100p | |
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Contextual Info: UF100C Thyristors Four-Layer Shockley Diode V(BO) Min. (V)90 V(BO) Max. (V)110 I(S) Max. (A)100u I(TRM) Max. (A)1.5§ @ t(w) (s) (Test Condition) I(TSM) Max. (A)15 V(R) Max. (V)110 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.0 @I(T) (A) (Test Condition)750m |
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UF100C Current50m StyleTO-204AAvar NumberTY00200003 | |
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Contextual Info: A2S869 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current50m @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage20 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage320m @I(FM) (A) (Test Condition)1.0m |
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A2S869 Current50m Voltage20 Voltage320m Current500n StyleDO-34var | |
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Contextual Info: 1S2787 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current50m V(RRM)(V) Rep.Pk.Rev. Voltage40 t(rr) Max.(s) Rev.Rec. Time3.0n @I(F) (A) (Test Condition)5.0m @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage0.9 @I(FM) (A) (Test Condition)5.0m |
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1S2787 Current50m Voltage40 StyleDO-35 | |
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Contextual Info: DPAD1 Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current50m V(RRM) (V) Rep.Pk.Rev. Voltage120 t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) |
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Current50m Voltage120 StyleTO-78 | |
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Contextual Info: 1N307 Diodes Germanium Diode Military/High-RelN I O Max.(A) Output Current50m V(RRM)(V) Rep.Pk.Rev. Voltage125 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500m V(FM) Max.(V) Forward Voltage1 @I(FM) (A) (Test Condition)100m I(RM) Max.(A) Reverse Current5u @V(R) (V)(Test Condition)10 |
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1N307 Current50m Voltage125 Current90u | |
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Contextual Info: UF100B Thyristors Four-Layer Shockley Diode V(BO) Min. (V)85 V(BO) Max. (V)115 I(S) Max. (A)100u I(TRM) Max. (A)1.5§ @ t(w) (s) (Test Condition) I(TSM) Max. (A)15 V(R) Max. (V)115 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.0 @I(T) (A) (Test Condition)750m |
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UF100B Current50m StyleTO-204AAvar NumberTY00200003 | |
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Contextual Info: 1N3846 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)90 V(BO) Max. (V)110 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A) V(R) Max. (V)60 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m |
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1N3846 Current50m StyleDO-204AA NumberTY00200003 | |
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Contextual Info: 3GCRDX Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)150 V(RRM) Max. (V) I(T) Rated Maximum (A)3.0 @Temp. (øC) (Test Condition)25Ï I(TSM) Max. (A)40 @ t(w) (s) (Test Condition) I(GT) Max. (A)50m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current50m |
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Current50m StyleStR-10 | |
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Contextual Info: 1N3840 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)21 V(BO) Max. (V)29 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)15 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m |
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1N3840 Current50m StyleDO-204AA NumberTY00200003 | |
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Contextual Info: 3GCRCY Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)100 V(RRM) Max. (V) I(T) Rated Maximum (A)3.0 @Temp. (øC) (Test Condition)25Ï I(TSM) Max. (A)40 @ t(w) (s) (Test Condition) I(GT) Max. (A)50m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current50m |
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Current50m StyleStR-10 | |
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Contextual Info: 3GCRHY Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)400 V(RRM) Max. (V) I(T) Rated Maximum (A)3.0 @Temp. (øC) (Test Condition)25Ï I(TSM) Max. (A)40 @ t(w) (s) (Test Condition) I(GT) Max. (A)50m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current50m |
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Current50m StyleStR-10 | |
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Contextual Info: 3GCRIX Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)500 V(RRM) Max. (V) I(T) Rated Maximum (A)3.0 @Temp. (øC) (Test Condition)25Ï I(TSM) Max. (A)40 @ t(w) (s) (Test Condition) I(GT) Max. (A)50m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current50m |
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Current50m StyleStR-10 | |
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Contextual Info: 3GCRDZ Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)150 V(RRM) Max. (V) I(T) Rated Maximum (A)3.0 @Temp. (øC) (Test Condition)25Ï I(TSM) Max. (A)40 @ t(w) (s) (Test Condition) I(GT) Max. (A)50m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current50m |
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Current50m StyleStR-10 | |