CY7C101 Search Results

CY7C101A

Abstract: CY7C102A 7C101A-12 l3lx
Contextual Info: PRELIMINARY 9 / C Y PR E SS CY7C101A CY7C102A 256K x 4 Static RAM with Separate I/O Features Functional Description • High speed The CY7C101A and CY7C102A are high­ perform ance CMOS static RAM s orga­ nized as 262,144 x 4 bits with separate I/O. Easy m emory expansion is p rovided by ac­

CY7C1014

Contextual Info: V CYPRESS Features • H igh speed — U a = 10 n s • C M O S for optim um speed/pow er • C enter power/ground pinout • A utom atic power-down w hen deselected • TT L -com patible in p u ts and outputs Functional Description The CY7C1014 is a high-perform ance

Contextual Info: 7C101A: 11-25-91 Revision: Thursday, February 18,1993 CY7C101A CY7C102A k ' Vwt S3 « 3 PRELIMINARY 7J= CYPRESS SEMICONDUCTOR 256K x 4 Static RAM with Separate I/O Features Functional Description • Highspeed — tAA = 12 ns • Transparent write 7C101A

cy7c1019dv

Contextual Info: CY7C1019DV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1019CV33 ■ High speed ❐ tAA = 10 ns ■ Low Active Power ❐ ICC = 60 mA @ 10 ns ■ Low CMOS Standby Power

transistor c1016

Abstract: c1016 CY7C1016 C10161
Contextual Info: fax id: 1057 1CY 7C10 16 ADVANCED INFORMATION CY7C1016 256K x 4 Static RAM Features output enable OE , and three-state drivers. The device has an automatic power-down feature that significantly reduces power consumption when deselected. • High speed — tAA = 10 ns

CY7C1012AV33

Abstract: O16I
Contextual Info: PRELIMINARY CY7C1012AV33 512K x 24 Static RAM Features power-down feature that significantly consumption when deselected. • High speed — tAA = 10 ns • Low active power — 180 mW max. • Operating voltages of 3.3 +/- 0.3V • 2.0V data retention • Automatic power-down when deselected

CY7C1019

Contextual Info: 1CY 7C10 19 ADVANCED INFORMATION CY7C1019 128K x 8 Static RAM Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options

Contextual Info: CY7C1012DV33 12-Mbit 512 K x 24 Static RAM 12-Mbit (512 K × 24) Static RAM Functional Description Features The CY7C1012DV33 is a high performance CMOS static RAM organized as 512K words by 24 bits. Each data byte is separately controlled by the individual chip selects (CE1, CE2, and CE3).

CY7C1019B

Abstract: CY7C1019D CY7C1019D-10VXI CY7C1019D-10ZSXI
Contextual Info: CY7C1019D 1-Mbit 128K x 8 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C1019B The CY7C1019D is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an

CY7C1018BV33

Abstract: CY7C1018CV33 CY7C1018CV33-10VC CY7C1018CV33-12VC CY7C1018CV33-12VXI CY7C1018CV33-15VXC
Contextual Info: CY7C1018CV33 128K x 8 Static RAM Features device has an automatic power-down feature that significantly reduces power consumption when deselected. • Pin- and function-compatible with CY7C1018BV33 • High speed — tAA = 10 ns • CMOS for optimum speed/power

CY7C1012DV33

Contextual Info: CY7C1012DV33 12-Mbit 512K X 24 Static RAM Functional Description Features • High speed ❐ tAA = 8 ns ■ Low active power ❐ ICC = 225 mA at 8 ns ■ Low CMOS standby power ❐ ISB2 = 25 mA ■ Operating voltages of 3.3 ± 0.3V ■ 2.0V data retention

cy7c1019d-10

Abstract: 30759
Contextual Info: CY7C1019D 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1019B • High speed — tAA = 10 ns • Low active power — ICC = 60 mA @ 10 ns • Low CMOS standby power • • • • • • • — ISB2 = 3 mA

Contextual Info: CY7C1019D PRELIMINARY 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1019B • High speed — tAA = 10 ns • CMOS for optimum speed/power • Low active power The CY7C1019D is a high-performance CMOS static RAM

Contextual Info: CY7C1011DV33 2-Mbit 128K x 16 Static RAM Features Functional Description • Pin-and function-compatible with CY7C1011CV33 The CY7C1011DV33 is a high-performance CMOS Static RAM organized as 128K words by 16 bits. • High speed Writing to the device is accomplished by taking Chip Enable

CY7C1011DV33-10ZSXI

Contextual Info: CY7C1011DV33 2-Mbit 128K x 16 Static RAM Features Functional Description • Pin-and function-compatible with CY7C1011CV33 • High speed The CY7C1011DV33 is a high-performance CMOS Static RAM organized as 128K words by 16 bits. — tAA = 10 ns • Low active power

Contextual Info: CY7C1019CV33 1 Mbit 128K x 8 Static RAM Features Functional Description • Temperature Ranges ❐ Industrial: –40°C to 85°C ❐ Automotive-A: –40°C to 85°C The CY7C1019CV33 is a high performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion

O16I

Contextual Info: CY7C1012AV33 512K x 24 Static RAM Features power-down feature that significantly consumption when deselected. • High speed reduces power Writing the data bytes into the SRAM is accomplished when the chip select controlling that byte is LOW and the write

Contextual Info: CY7C1011CV33 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Temperature ranges ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C The CY7C1011CV33 is a high performance complementary

CY7C1019B

Abstract: CY7C1019B-10VC CY7C1019B-12VC CY7C1019V33 7C1019B-15
Contextual Info: C1019V33 CY7C1019B 128K x 8 Static RAM Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options • Functionally equivalent to CY7C1019V33

Contextual Info: CY7C1011CV33 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Functional Description Features The CY7C1011CV33 is a high performance complementary metal oxide semiconductor (CMOS) static RAM organized as 131,072 words by 16 bits. This device has an automatic power

Contextual Info: CY7C1019D 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C1019B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA @ 10 ns ■ Low CMOS standby power

CY7C1019

Abstract: CY7C1019BN CY7C1019BN-12VC CY7C1019BN-12ZC CY7C1019BN-12ZXC CY7C1019BN-15VC
Contextual Info: CY7C1019BN 128K x 8 Static RAM Features Functional Description • High speed The CY7C1019BN is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE , an active LOW Output Enable (OE), and three-state drivers. This

Contextual Info: CY7C1012AV33 PRELIMINARY 512K x 24 Static RAM Features Writing the data bytes into the SRAM is accomplished when the chip select controlling that byte is LOW and the write enable input WE input is LOW. Data on the respective input/output (I/O) pins is then written into the location specified

Contextual Info: CY7C1012AV33 512K x 24 Static RAM Features Functional Description • High speed ❐ tAA = 8 ns The CY7C1012AV33 is a high-performance CMOS static RAM organized as 512K words by 24 bits. Each data byte is separately controlled by the individual chip selects CE0, CE1, CE2 . CE0