CSB1626 Search Results

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER DARLINGTON TRANSISTOR CSB1626 TO-220 Plastic Package Complementary CSD2495 ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION Collector -Base Voltage(open emitter)

transistor k 385

Contextual Info: CSB1626 CSD2495 CSB1626 PNP Plastic Power Darlington Transistor CSD2495 NPN Plastic Power Darlington Transistor OIM A B C E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 t ,15 1,40 3.75 3,68 2.29 2.79 2.54 3.43 0,56 12,70 14,73 6,35 2.92 2.03 31.24 7 DEG 14.42

CSB1626

Abstract: CSD2495 k 30 transistor
Contextual Info: CSB1626 CSD2495 CSB1626 PNP Plastic Power Darlington Transistor CSD2495 NPN Plastic Power Darlington Transistor DIM A B C E F G H J K L M N MIN 14.42 9,63 3,56 MAX 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3,88 2.29 2.79 2.54 3.43 0,56 12.70 14.73 6.35 2.03 2.92

CSB1626

Abstract: CSD2495
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON EPITAXIAL POWER DARLINGTON TRANSISTOR CSB1626 TO-220 Plastic Package Complementary CSD2495 ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION Collector -Base Voltage(open emitter)

Contextual Info: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON EPITAXIAL POWER DARLINGTON TRANSISTOR CSB1626 TO-220 Plastic Package Complementary CSD2495 ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION

CSD2495

Abstract: CSB1626
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER DARLINGTON TRANSISTOR CSB1626 TO-220 Plastic Package Complementary CSD2495 ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION Collector -Base Voltage(open emitter)

transistor k 385

Contextual Info: CSB1626 CSD2495 CDIL CSB1626 PNP Plastic Power Darlington Transistor CSD2495 NPN Plastic Power Darlington Transistor & 0 —J g - a. DiM A B C D E F G H J K L M N MIN MAX 14.42 9,63 3,56 16.51 10.67 4.83 0,90 1.15 1.40 3,75 3,88 2,29 2,79 2,54 3,43 0,56 12,70 14,73

T1P42C

Abstract: bd534j T1P102
Contextual Info: TO-220 PIN CO N FIG U R ATIO N 1. B A S E 2. C O L L E C T O R 3. EM ITTER 4. C O L L E C T O R c ,01 0 -I MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 DIM E A B C D E F G H J K L M N 3 G - 1,15 3,75 2,29 2,54 12,70

T1P42C

Contextual Info: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN

B507D

Abstract: BD95280 A940 A614-Y a968 B507E A968B A614 CSA6140 bs340
Contextual Info: Electrical Characteristics Ta*25‘C, Unless OthenrfM SpadfM Maximum Ritingi Type No. P» (W) (V) Mm flTc=25‘c VcE (V) t (A) c* <pn Max f, (MHz) Typ Min vcao (V) Min V C£0 2N6107 80 70 5 40 7 * 100 75 30 150 2.3 2 7 4 4 3.5 1 7 2 250 10 500 2N6109 60