ON2179
Abstract: focal reflective phototransistor CNZ2179 ON2179 circuit V40IF
Contextual Info: Reflective Photosensors Photo Reflectors CNZ2179 (ON2179) Reflective Photosensor Unit : mm 5.2 Overview CNZ2179 is a reflective photosensor with a long focal distance, in which a high efficiency GaAs infrared light emitting diode is used as a light emitting element and a high sensitivity Si phototransistor
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cnz2179on217985maxfocal reflective phototransistor+2on2179 circuitv40if
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rl 205 diode
Abstract: focal reflective phototransistor Reflective photosensor high sensitivity reflective phototransistor infrared photo reflector phototransistor visible light Reflective photosensor response time CNZ2179
Contextual Info: Reflective Photosensors Photo Reflectors CNZ2179 Reflective Photosensor Unit : mm 5.2 Overview CNZ2179 is a reflective photosensor with a long focal distance, in which a high efficiency GaAs infrared light emitting diode is used as a light emitting element and a high sensitivity Si phototransistor
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cnz217985maxrl 205 diodefocal reflective phototransistor+5reflective photosensorhigh sensitivity reflective phototransistorinfrared photo reflectorphototransistor visible lightreflective photosensor response time
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K1060
Contextual Info: Reflective Photosensors Photo Reflectors CNZ2179 (ON2179) Reflective photosensor Unit: mm 5.2 Non-contact point SW, object sensing • Overview 13.0 0.85 max. (2-0.5) (2-0.5) ■ Features (7.6) • Long focal distance: 6 mm (typ.) • Visible light cutoff resin is used
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ON2179
Abstract: ON2179 circuit CNZ2179
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Reflective Photosensors (Photo Reflectors) CNZ2179 (ON2179) Reflective Photosensor For contactless SW and object detection • Overview CNZ2179 is a reflective photosensor with a long focal distance, in which a high efficiency GaAs infrared light emitting diode is used as a
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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pamp13-n1mip2f3mip2f4mip382+7mip2e7dmymip2f2mip291mip414smip2e5dmymip411mip3e3smy equivalent
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ON1501
Abstract: LN29RCPX LNG242RDA ON1120 CNZ1215 LN21RPH-TA ON1024 ON3131 LN39GCPX on1128
Contextual Info: -y 7‘LED Surface Mounting Chip LED GW Bi-Color Type Type No. Lighting Color LN2162C68— TR ÎÊ *\fÎi^5 È Î§ Pure Green Orange Absolute Maximum Ratings (Ta=25"C) L ig h tin g C o lo r PD (m W ) 1 F( m A ) l FP( m A ) * V r (V) T o p r ( iC ) P u re G re e n
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ln2162c68--lng221rfrlng221rkrlng222rfr+16lng222rkrlng224rfrlng224rkrlng229rfrlng233rfrlng240cdaeon1501ln29rcpxlng242rdaon1120cnz1215ln21rph-taon1024on3131ln39gcpxon1128
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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pamp13-n1mip411mip2f4mip2f3+7an12947amip2f2mip2f20msmip2f40msmip2e7dmypanasonic inverter dv 700 manualmip291
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ON1120
Abstract: ON1112 59 ON2179 CNZ1120 VISIBLE LIGHT PHOTOdarlington TRANSISTOR ON3171 ON1387 ON1113 reflective photocoupler CNA1006N
Contextual Info: Characteristics List • Photocoupler ■ Hologram Unit 17 Photocoupler ■ Photointerrupter Absolute Maximum Ratings Electro • Optical Characteristics Ta = 25°C Part No. IF mA VCEO (V) IF (mA) CNA1006N IC min. (mA) ICEO max. (µA) t r , tf typ. (µs)
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cna1007hcna1006ncna1009hon1024+14cna1011kon1113cnz3132on3132cnz3133on3133on1120on1112 59on2179cnz1120visible light photodarlington transistoron3171on1387reflective photocoupler
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