CLT555 Search Results

CLT555

Contextual Info: FASCO INDS/ SEN I SY S 40E j> 34=1=1730 0 0 0 1 2 7 2 1 ^ S E N I C E EESDH CLT555 IT - M i- S I Silicon Planar Phototransistor 0.125 3.183 D1A N0M r r J _ 0.060 [1,523 DIA S PH E R IC A L L EN S 11 0.208 C5.13] 0.192 (4.883 • 0.100 C2.543 NOM r 0.01B I NEW

Contextual Info: FASCO INDS/ SENISYS 40E I> C3 34=1=1736 0001272 1 ^ S E N I EEEESai i'T-Mi-s l CLT555_ Silicon Planar Phototransistor Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • Storage + 100°C

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

TIL149

Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
Contextual Info: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55

C1229

Abstract: CLED145A CLED145B CLED145C CLED145D CLT555 NGM 1600
Contextual Info: FASCO INDS/ SENISYS 4QE D 34T173Û G00131D 5 IS E N I T-H Gallium Arsenide Infrared Emitting Diodes 0.202 5.131 0,192 [4.883 rr 0.125 (3.181 DIA NQM . 0.060 C1.521 OJA S P H ER IC AL LE N S r 0.018 (0.431 1 KQH DIMENSIONS ARE IN INCHES (M IL L IM E T E R S !

Contextual Info: FASCO INDS/ SENISYS 4QE D m 34clci73a 0001310'.$ B S E N I Gallium Arsenide Infrared Emitting Diodes Absolute Maximum Ratings Ta = 25°C unless otherwise stated, Features • • • • • (our power ranges 935 nm wavelength small plastic package 40“ beam angle