CLD31 Search Results

Contextual Info: Alternate Source/ Second Source Photodiodes VTD31AAH CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of

CLD31

Abstract: CLD31BB CLD56 CLD56BB CLD 100 Senisys AAA01
Contextual Info: MOE T> E3 3M«n73A OOOOSTO M ESSENI 7 FASCO INDS/ SENISYS -^//-5/ -4 CLD31 CLD56 CLD31BB CLD56BB Product Data •325 01A. M . ±4t« ,170 t Silicon Planar Photovoltiac Diodes —1 •*— .2 0 0 ^ — s. / — CATHOŒ CATHO LONG LEAD 3 6 0 DlA., CLD 31 C LD 31B B

VTD31AAH

Abstract: CLD31AA
Contextual Info: Alternate Source/ Second Source Photodiodes VTD31AAH CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of

cm 8600 c

Abstract: cm 8600 31BB CLD31 CLD31BB CLD56 CLD56BB
Contextual Info: CLD31 Product Data CLD56 CLD31BB CLD56BB Silicon Planar Photovoltiac Diodes l .310 1 ^—¿065 M AX. f = ' tff r ^ CATMOOE LONG LEAD C L D 31 C LD 31BB GENERAL DESCRIPTIO N — The CLD Series of Photo­ diodes is specifically designed to optimize Photovoltaic

Contextual Info: L»OE D Tf E3 345573.5 00DG550 4 E3SENI 7 ^ /- 5 / FASCO INDS/ SENISYS Product Data -4 CLD31 CLD56 CLD31BB CLD56BB s i Silicon Planar Photovoltiac Diodes CLD 31 CLD31BB GENERAL DESCRIPTION — The CLD Series of Photo­ diodes is specifically designed to optimize Photovoltaic

Contextual Info: Product Data CLD31 CLD56 CLD31BB CLD56BB r - , 0 6 5 MAX, Silicon Planar Photovoltiac Diodes iA in. fT H h—.200 s. A j CATHOOE LONG LEAD - *3 60 DIA. CLD 31 CLD31BB GENERAL DESCRIPTION — The CLD Series of Photo­ diodes is specifically designed to optimize Photovoltaic

Contextual Info: SbE D 3G3GtiDci D D D lin Ü2T • VCT VTD31, V T D 3 1 A A VTP Process Photodiodes CLD31, 31AA INDUSTRY EQUIVALENT E G & G VAC TE C PACKAGE D IM EN SIO N S inch (mm) CASE 13 PRODUCT DESCRIPTION CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) Planar silicon photodiode mounted on

J265

Abstract: CLD31 CLD31BB CLD56 CLD56BB ir source Clairex Electronics CLD31
Contextual Info: 214S?n 11E D CLAIREX ELECTRONICS DIV 0Q0G743 S T-W/-5/ Product Data CLD31 CLD56 CLD31BB CLD56BB p065M AX. Silicon Planar Photovoltiac Diodes 2 MM, JL-T v / “ CATHOOC G fc CLD 31 CLD31BB GENERAL DESCRIPTIO N — The CLD Series of Photo­ diodes is specifically designed to optimize Photovoltaic

EG*G Vactec

Abstract: VTD31AA Vactec Photodiode vactec
Contextual Info: VTD31AA Alternate Source/ Second Source Photodiodes CLD31AA IN D U STR Y EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and

ceramic photodiode case 13

Abstract: CLD31AA VTD31AA
Contextual Info: Alternate Source/ Second Source Photodiodes VTD31AA CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of

S1723-04

Abstract: BPW34 application VTD34 BPW34 BPW34 application note SFH206K BPW34F SFH205 VTD205 VTD205K
Contextual Info: Alternate Source/ Second Source Photodiodes VTD31AA CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of

LD3600

Abstract: Eaton rgc320032e HFD3225 Eaton WESTINGHOUSE scr LS CIRCUIT BREAKERS ld2500 Cutler-Hammer Digitrip RMS 310 trip unit digitrip 310 time curve Digitrip OPTIM 1050 HMCP030H1
Contextual Info: Molded Case Circuit Breakers Series G Circuit Breakers 2.1 Introduction Product Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Typical Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

337-Pin

Abstract: "ESP" F0412
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-22115-3E ASSP IPsec Engine High-Speed IPsec Processing Engine MB86978 • DESCRIPTION MB86978 is IPsec accelerator engine of Inline Architecture. Once setup with appropriate parameters, the device can perform bi-directional 100 Mbps IPsec processing at full wire speed.

F65510

Abstract: sharp lm64p80 Citizen G6481L-FF Jl-23 CPU-86 I46E8 "VGA Video Controller" 100pin qfp 65510 VGA chips 65520 flat panel vga LJ sharp EL display
Contextual Info: • •• •• •• •• •• • v-nira. 65510 Flat Panel VGA Controller Highly integrated Flat Panel controller • Separate Address and Data buses • Direct support for Dual or Single Scan panels • Single clock source • 100-pin package CPU activity indicated for orderly power down

TIL149

Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
Contextual Info: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55

B3370

Abstract: F0511 BGA337 337P SAS controller chip HMAC-MD5-96 BGA288 "ESP"
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-22115-4E ASSP IPsec Engine High-Speed IPsec Processing Engine MB86978A • DESCRIPTION MB86978A is IPsec accelerator engine of Inline Architecture. Once setup with appropriate parameters, the device can perform bi-directional 100 Mbps IPsec processing at full wire speed.

B3370

Abstract: MB86978 HMAC-MD5-96 "ESP" BGA337
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-22115-2E ASSP IPsec Engine High-Speed IPsec Processing Engine MB86978 • DESCRIPTION MB86978 is IPsec accelerator engine of Inline Architecture. Once setup with appropriate parameters, the device can perform bi-directional 100 Mbps IPsec processing at full wire speed.

UPD1962

Abstract: UPD1963 UPD1963C UPD1962C Q 4.194 304
Contextual Info: N E C ELECTRONICS INC 75 NEC De | b457SES □QGci Q 2 7 û T 0 T -5 Ò -2 -3 P R E LU M IN A R Y S P E C IF IC A T IO N MOS DIGITAL INTEGRATED CIRCUITS E LEC T R O N DEVICE / / P D 1 9 6 2 C , ^ P D 1 9 6 3 C CMOS MSI FOR CRYSTAL-CONTROLLED CLOCK SILICON COMPLEMENTARY MOS

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN