CGH60030D Search Results

CGH60030D Datasheets (1)

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Cree/Wolfspeed

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CGH60030D-GP4		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V DIE	Original	PDF	1.39MB

CGH60030D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
cree 3535 Contextual Info: CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal	Original	cgh60030d cgh6003 cree 3535	PDF
CGH60030D Abstract: CGH6003 cree 3535 Contextual Info: CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal	Original	cgh60030d cgh6003 cree 3535	PDF
CGH40025P Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D Contextual Info: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors	Original	cgh40025p cgh40010p cgh60015 gan ads +6gan hemt transistor x band cgh40120f cgh40045f cgh60015d cgh60060d cgh60030d cgh60120d	PDF

Catalog Datasheet

Type

Document Tags

PDF

cree 3535

Contextual Info: CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal

Original

cgh60030d cgh6003 cree 3535

PDF

CGH60030D

Abstract: CGH6003 cree 3535
Contextual Info: CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal

Original

cgh60030d cgh6003 cree 3535

PDF

CGH40025P

Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D
Contextual Info: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors

Original

cgh40025p cgh40010p cgh60015 gan ads +6

PDF