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30V18A Abstract: CEM3032 Contextual Info: CEM3032 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 18A, RDS ON = 4.8mΩ @VGS = 10V. RDS(ON) = 6.8mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.	Original	CEM3032 30V18A CEM3032	PDF

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30V18A

Abstract: CEM3032
Contextual Info: CEM3032 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 18A, RDS ON = 4.8mΩ @VGS = 10V. RDS(ON) = 6.8mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

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CEM3032 30V18A CEM3032

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