CEB6060L Search Results
CEB6060L Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| CEB6060L | Chino-Excel Technology | N-Channel Enhancement Mode Field Effect Transistor | Scan | 529.29KB | 5 | ||
| CEB6060LR | Chino-Excel Technology | N-Channel Enhancement Mode Field Effect Transistor | Scan | 547.49KB | 5 |
CEB6060L Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
ceb6060lContextual Info: CEP6060L/CEB6060L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A,RDS ON = 20mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. |
Original |
cep6060l/ceb6060lo-220o-263ceb6060l | |
cep6060
Abstract: ceb6060l CEP6060L C3020
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Original |
cep6060l/ceb6060lo-220o-263cep6060+3 | |
CEP6060L
Abstract: ceb6060l B606
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OCR Scan |
cep6060l/ceb6060l25itiqo-220o-263+5 | |
I2110Contextual Info: PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 6 0 A , RDS ON =20mQ @ V g s = 10 V . R ds (o n )=25 iti Q @ V gs= 5 V . • Super high dense cell design for extremely low Rds(on> • High power and current handling capability. |
OCR Scan |
cep6060lr/ceb6060lr25itiqo-220o-263+3 |