CD22101E Search Results

Contextual Info: CD22101EX Linear ICs Crosspoint Switch Circuit statusû Military/High-RelN Nom. Supp V 5.0ñ Minimum Operating Temp (øC)-40 Maximum Operating Temp (øC)85 Package StyleDIP Mounting StyleT Pinout Equivalence Code24-360 # Pins24 Ckt. (Pinout) NumberLN02400360

Contextual Info: CD22101E Linear ICs Crosspoint Switch Circuit status Military/High-RelN Nom. Supp V 5.0ñ Minimum Operating Temp (øC)-40 Maximum Operating Temp (øC)85 Package StyleDIP Mounting StyleT Pinout Equivalence Code24-360 # Pins24 Ckt. (Pinout) NumberLN02400360

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Abstract: COSMOS 817 COSMOS RA TP20N
Contextual Info: HARRIS SEMICOND SECTOR ffl blE ]> 43D5271 004721^ 2?T B H A S CD22101, CD22102 CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory March 1993 Features Description • Low ON Resistance. 75V Typ. at V qq > 12V CD22101 and CD22102 crosspoint switches consist of 4 x

Contextual Info: CD22101, CD22102 CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory March1993 Features Description • Low ON Resistance. 75V Typ. atVpo = 12V CD22101 and CD22102 crosspoint switches consist of 4 x 4 x 2 arrays of crosspoints transmission gates with a 4line to 16-line decoder and 16 latch circuits. Any one of the

Horizontal Transistor TT 2246

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CD22101E

Abstract: CD22101 CD22101F CD22102 CD22102E CD4029
Contextual Info: CD22101, CD22102 S E M I C O N D U C T O R CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory January 1997 Features Description • Low ON Resistance . . . . . . . . . . . . 75Ω Typ at VDD = 12V CD22101 and CD22102 crosspoint switches consist of 4 x 4 x 2 arrays of crosspoints (transmission gates) with a

Contextual Info: S3 CD22101, CD22102 CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory J a n u a ry 1997 Features Description 75£i Typ at Vpp = 12V • "Built - In” Latched Inputs • Large Analog Signal Capability. i^oc/2 • Switch Bandw

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Contextual Info: CD22101, CD22102 Semiconductor OBSOLETE Ï’^PLACEM EN'T l CMOS 4 x 4 x 2 Crosspoint Switch NO RECOMMENDED 1.80o-442-7747 with Control Memory February 1999 Ca i,C enW lfeP P ^^p@ harris:c ^ - _ Features1 Description • Low ON Resistance. 75£2 Typ at VDD = 12V

CD22101E

Abstract: CD22 CD22101 CD22101F CD22102 CD22102E CD4029 4X4 ANALOG crosspoint switch
Contextual Info: CD22101, CD22102 Semiconductor T CMOS 4 E PRODUC OBSOLET CEMENT A L P E R D E D MEN 0-442-7747 NO RECOM ations 1-80 .com c li p p A l a arris Call Centr entapp@h or email: c Description February 1999 Features • Low ON Resistance . . . . . . . . . . . . 75Ω Typ at VDD = 12V

Contextual Info: h a frris CD22101, CD22102 S E M I C O N D U C T O R M W a j a CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory January 1997 Features Description • Low ON R esistan ce.750 . Typ at V DD = 12V CD22101 and CD22102 crosspoint switches consist of

thyristor TAG 8506

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equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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