C5923 Search Results

1BW TRANSISTOR

Abstract: transistor 1bw Keithley 195a S3931 C5923 S3979 L1915-01 S1352 S3270 S3932
Contextual Info: PSD Signal processing circuit for 1-D PSD C5923 Circuit board for easier 1-D PSD operation Features Applications l No complicated adjustments required Position can be measured just by installing a 1-D PSD on the board. l Accurate position sensing Use of pulse-driven LED allows accurate position sensing

Contextual Info: PHOTODIODE Si PIN photodiode S6560 Incident light angle sensor requiring no lens S6560 is an incident light angle sensor that does not require any lens. S6560 detects the incident light angle by processing the output current of the built-in dual photodiode. Hamamatsu also provides C5923 driver circuit for easier evaluation of S6560.

Contextual Info: HAMAMATSU SIGNAL PROCESSING CIRCUIT FOR 1-D PSD C5923 Suitable for measurement using 1-D PSD Position Sensitive Detector FEATURES • S ta b le detection The C5923 is pulse-driven, and so it has a less influence of background light. Position measurement can be made simply independent

1BW TRANSISTOR

Abstract: transistor 1BW Keithley 195a C5923 S3931 L1915-01 S1352 S3270 S3932 S3979
Contextual Info: PSD Signal processing circuit for 1-D PSD C5923 Circuit board for easier 1-D PSD operation Features Applications l No complicated adjustments required Position can be measured just by installing a 1-D PSD on the board. l Accurate position sensing Use of pulse-driven LED allows accurate position sensing

S6560

Abstract: C5923 C3683-01 SE-171 dual photodiode
Contextual Info: PHOTODIODE Si PIN photodiode S6560 Incident light angle sensor requiring no lens S6560 is an incident light angle sensor that does not require any lens. S6560 detects the incident light angle by processing the output current of the built-in dual photodiode. Hamamatsu also provides C5923 and C3683-01 driver circuits for easier evaluation of S6560.

Contextual Info: PHOTODIODE Si PIN photodiode S6560 Incident light angle sensor requiring no lens S6560 is an incident light angle sensor that does not require any lens. S6560 detects the incident light angle by processing the output current of the built-in dual photodiode. Hamamatsu also provides C5923 and C3683-01 driver circuits for easier evaluation of S6560.

Keithley 195a

Abstract: S3931 ma1170 C5923 S3979 L1915-01 S1352 S3270 S3932
Contextual Info: PSD 1次元PSD信号処理回路 C5923 1次元PSD 位置検出素子 の使用を容易にする回路基板 特長 用途 l 繁雑な調整が不要 l 回路に同期したパルス光による各種変位の測定 l 1次元PSDを使用した各種実験

CMZ5945B

Abstract: CMZ5936B CMZ5933B CMZ5930B CMZ5953B CMZ5934B CMZ5946B CMZ5955B CMZ5939B CMZ5927B
Contextual Info: WT' central’ CMZ5921B THRU CMZ5956B Semiconductor Corp. SURFACE MOUNT SILICON ZENER DIODE 1.5 WATT, 6.8 THRU 200 VOLTS ± 5% TOLERANCE FEATURES: •SU PER MINIATURE CASE •200 WATTS OF TVS PO W ER •± 5% TOLERANCE •SU PERIO R LOT TO LOT CONSISTENCY

S4582

Abstract: photodiodes 2d C4757 psd photodiode C4758
Contextual Info: Related Products c PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology. i Peak Sensitivity Photocurrent

r9824

Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16

RTL8211E

Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?

RTL8211E

Abstract: Marvell 88E1116R TC7SZ08AFEAPE TLA-6T213HF C5855 88E1116R 57B8 PP3V42 NTC 15D-7 u9701
Contextual Info: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97A MLB SCHEMATIC C 681298 PRODUCTION RELEASED DATE 03/11/09 ? REFERENCED FROM T18 03/11/2009 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

ISL6259

Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor
Contextual Info: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01

C5928

Abstract: c5936 CMZ5945B c5929 CMZ5925B CMZ5930B CMZ5953B CMZ5936B CMZ5933B CMZ5934B
Contextual Info: Central CMZ5921B THRU CMZ5956B TM Semiconductor Corp. SURFACE MOUNT SILICON ZENER DIODE 1.5 WATT, 6.8 THRU 200 VOLTS ± 5% TOLERANCE FEATURES: • SUPER MINIATURE CASE • 200 WATTS OF TVS POWER • ± 5% TOLERANCE • SUPERIOR LOT TO LOT CONSISTENCY • LOW COST

S3931

Abstract: position sensitive detectors Si apd 400- 700 nm C7563 S3274 S4581 S4583 S4584 S5629 S7105
Contextual Info: SOLID STATE D I V I S I O N セレクションガイド 2010.02 PSD 位置検出素子 POSITION SENSITIVE DETECTORS 優れた位置分解能・応答性の高信頼性受光素子 POSITION SENSITIVE DETECTORS PSD (位置検出素子) 光の入射位置を検出する方法として多数の小型検出器を並べたり、多分割された検出器 (CCDなど)を用いて行う

s1743

Abstract: S1869 S1662 C4757 TX2C
Contextual Info: lÄ T S U FEATURES • High position resolution ONE, TWO-DIMENSIONAL PSDs POSITION SENSITIVE DETECTORS The Hamamatsu Si PSDs (Position Sensitive Detectors) are optoelectronic sensors that provide continuous position data of light spots traveling over their photosensitive surfaces.

CMZ5945B

Abstract: C5936 CMZ5925B CMZ5930B c5928 CMZ5934B CMZ5951B CMZ5933B CMZ5920B CMZ5936B
Contextual Info: Central CMZ5913B THRU CMZ5956B TM Semiconductor Corp. SURFACE MOUNT SILICON ZENER DIODE 1.5 WATT, 3.3 THRU 200 VOLTS ± 5% TOLERANCE FEATURES: • SUPER MINIATURE CASE • 200 WATTS OF TVS POWER • ± 5% TOLERANCE • SUPERIOR LOT TO LOT CONSISTENCY • LOW COST

C5936

Abstract: C5928 c5929 CMZ5945B C5939 CMZ5925B CMZ5951B CMZ5936B c5929b CMZ5953B
Contextual Info: Central CMZ5921B THRU CMZ5956B TM Semiconductor Corp. SURFACE MOUNT SILICON ZENER DIODE 1.5 WATT, 6.8 THRU 200 VOLTS ± 5% TOLERANCE FEATURES: • SUPER MINIATURE CASE • 200 WATTS OF TVS POWER • ± 5% TOLERANCE • SUPERIOR LOT TO LOT CONSISTENCY • LOW COST

CMZ5945B

Abstract: CMZ5925B CMZ5930B CMZ5936B CMZ5933B CMZ5934B CMZ5944B CMZ5955B CMZ5951B CMZ5947B
Contextual Info: W r' Central CMZ5921B < THRU CMZ5956B Semiconductor Corp. SURFACE MOUNT SILICON ZENER DIODE 1.5 WATT, 6.8 THRU 200 VOLTS ±5% TOLERANCE FEATURES: • SUPER MINIATURE CASE • 200 WATTS OF TVS POWER • ± 5% TOLERANCE • SUPERIOR LOT TO LOT CONSISTENCY

13c MARKING

Abstract: marking code 5y CMSH3-40 MARKING CODE 8Y CMZ5936B marking code c20a marking wc 8N Marking code CS CGDM marking code 4A
Contextual Info: Marking codes Marking Code Part Number Marking Code Part Number Marking Code Part Number 1 A BC846A 4B BC859B 8 AC CMSZ5226B 1 A8 CMSZ5250B 4C BC859C 8 B1 CMSZ5222B 1 B BC846B 4E BC860A 8 BC CMSZ5227B 1 B8 CMSZ5251B 4F BC860B 8 C1 CMSZ5223B 1 C8 CMSZ5252B

S3932-01

Abstract: s3979 S3931-01 S1869
Contextual Info: HAMAMATSU One-dimensional PSDS Position Sensitive Detectors S3979/S3931, S3932 Series For precision displacement measurement Active areas : 1 X 3 mm, 1 X 6 mm, and 1 X 1 2 mm FEATURES • Superior position detection ability • High reliability • Easy to use 4-pin small ceramic package

C7563

Contextual Info: Related Products Phototransistors T he phototransistor gives a large output current as com pared to * photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on a past experience with opto-sem iconductor technology. Type No. S2829 S4404-01

C6073

Abstract: SIL1178 c6074 C9013 NEC C3568 c4793 c5885 K769 C6090 15B1 zener diode
Contextual Info: 8 6 7 REV STD D PDF CSA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

MCP79MXT-B3

Abstract: ISL6258A ti c3931 u9701 rtl8211* Reference design L6703 C3931 88E1116R FW643E CS4206A
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,CORNHOLE,K19 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE