C10T06QH Search Results

C10T06QH-11A

Contextual Info: SBD T y p e : C10T06 C10T06QHQH-11A OUTLINE DRAWING FEATURES *Tabless TO-220 *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Approx Net Weight: 1.45g Symbol C10T06QH-11A Unit Repetitive Peak Reverse Voltage

Contextual Info: SBD T y p e : C10T06QH •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.4g ■最大定格 / Maximum Ratings

Contextual Info: SBD T y p e : C10T06QH •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.4g ■最大定格 / Maximum Ratings

DIODE SMD 10A

Abstract: C10T06QH C10T06QH-11A
Contextual Info: SCHOTTKY BARRIER DIODE C10T06QH C10T06QH-11A îoA/eov F EA TU R E S o |SQUARE-PAK| TO-263AB SMD Packaged in 24mm T ape and Reel : C 10T -Q H O Tabless T0-220 : C10T06QH-11A oD ual D iodes—Cathode Common O Low Forw ard V oltage Drop o High Surge Capability

hgrm

Contextual Info: SCHOTTKY BARRIER DIODE C10T06QH C10T06QH-11A îoA/eov FEATU RES o | SQUARE-PAK | TO-263AB SMD Packaged in 24mm Tape and Reel : C 10T -Q H OTabless TO-220 : C10T06QH-11A ODual Diodes—Cathode Common OLow Forward Voltage Drop o High Surge Capability OTj = 150'C operation

C10T06QH

Contextual Info: SBD T y p e : C10T06 C10T06QH OUTLINE DRAWING FEATURES *SQUARE-PAK TO-263AB SMD Packaged in 24mm Tape and Reel *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Approx Net Weight: 1.4g Symbol

Contextual Info: 10A Avg. 60 Volts SBD C10T06QH •最大定格 Maximum Ratings Item Symbol く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage くり返しピークサージ逆電圧 Repetitve Peak Surge Reverse Voltage 平 均 整 流 電 流 Average Rectified Forward Current

C10T06QH-11A

Contextual Info: 10A Avg. 60 Volts SBD C10T06QH-11A •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage くり返しピークサージ逆電圧 Repetitive Peak Surge Reverse Voltage

Contextual Info: SBD T y p e : C10T06QH-11A •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.45g ■最大定格 / Maximum Ratings

Contextual Info: SBD T y p e : C10T06 C10T06QH OUTLINE DRAWING FEATURES *SQUARE-PAK TO-263AB SMD Packaged in 24mm Tape and Reel *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Approx Net Weight: 1.4g Symbol

Contextual Info: SBD T y p e : C10T06 C10T06QHQH-11A OUTLINE DRAWING FEATURES *Tabless TO-220 *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Approx Net Weight: 1.45g Rating Repetitive Peak Reverse Voltage

Contextual Info: SCHOTTKY BARRIER DIODE C10T06QH C10T06QH-11A ioa/ gov FEATURES o |SQUARE-PAk1 TO-263AB SMD Packaged in 24mm T ape and Reel : C 1 0 T -Q H O T abless TO-220 : C10T06QH-11A o D ual Diodes—Cathode Common O Low F orw ard V oltage Drop o H igh Surge Capability

Contextual Info: SBD T y p e : C10T06 C10T06QH OUTLINE DRAWING FEATURES *SQUARE-PAK TO-263AB SMD Packaged in 24mm Tape and Reel *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.4g

Contextual Info: SBD T y p e : C10T06QH-11A •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.45g ■最大定格 / Maximum Ratings

Contextual Info: 10A Avg. 60 Volts SBD C10T06QH-11A •OUTLINE DRAWING mm ■最大定格 Maximum Ratings Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage くり返しピークサージ逆電圧 Repetitive Peak Surge Reverse Voltage

C10T06QH

Contextual Info: 10A Avg. 60 Volts SBD C10T06QH •最大定格 Maximum Ratings Item Symbol く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage くり返しピークサージ逆電圧 Repetitve Peak Surge Reverse Voltage 平 均 整 流 電 流 Average Rectified Forward Current

C10T06QH-11A

Contextual Info: SBD T y p e : C10T06 C10T06QHQH-11A OUTLINE DRAWING FEATURES *Tabless TO-220 *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Approx Net Weight: 1.45g Rating Repetitive Peak Reverse Voltage

C10T06QH

Contextual Info: SBD T y p e : C10T06 C10T06QH OUTLINE DRAWING FEATURES *SQUARE-PAK TO-263AB SMD Packaged in 24mm Tape and Reel *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Approx Net Weight: 1.4g Symbol

FCH20U10

Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

PT76S16

Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Contextual Info: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

FRH20A10

Abstract: FCH20A20 FRH20A20 Schottky Diodes 5A TC108 TC116 TC105 FCH10 fcq06a06 FCL30A015 tc122 25
Contextual Info: Schottky Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM（mA) 25°C Tjmax (°C) Case Outline TO-220AB Full Pack FSH04A03LB 30 4 Tc=132℃ 100 0.56 1 150 14B FSH04A04B FSH04A06B FSH04A10B 40 60 100 4 4 4 Tc=131℃ Tc=129℃ Tc=126℃

30KF60B

Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
Contextual Info: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166

508RP

Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Contextual Info: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

FCGS20A12

Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Contextual Info: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ