BUZ901P Search Results
BUZ901P Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| BUZ901P | Magnatec | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V. | Original | 38.72KB | 4 | ||
| BUZ901P | Magnatec | N-channel power MOSFET for audio applications, 200V | Original | 87.25KB | 4 | ||
| BUZ901P | Magnatec | N-Channel Power Mosfet | Scan | 200.51KB | 3 | ||
| BUZ901P | Unknown | Shortform Datasheet & Cross References Data | Short Form | 84.39KB | 1 |
BUZ901P Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BUZ900P
Abstract: L01A BUZ901P 8uz90 BUZ901 BUZ905P BUZ906P
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OCR Scan |
buz900pbuz901pbuz905pbuz906p+3 | |
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Contextual Info: BUZ900P BUZ901P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 N–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50 |
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buz900pbuz901p | |
BUZ901P
Abstract: BUZ900P BUZ900 BUZ906P BUZ901 BUZ905P 125W3
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buz900pbuz901pbuz900buz906p+3 | |
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Contextual Info: BUZ901P Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)8.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55 |
Original |
buz901p | |
NO10V
Abstract: buz901 buz906p BUZ901P
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OCR Scan |
buz900pbuz901pbuz905pbuz906p+4 | |
BUZ901P
Abstract: BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410
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buz341o-247buz344buz346+12 | |
BUZ900P
Abstract: BUZ901P BUZ906 BUZ905P BUZ901 BUZ905 BUZ906P
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buz905pbuz906ppr000buz900p+4 | |
HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET
Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
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OCR Scan |
buz905dbuz906d-100ma-160v+11 | |
irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
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element-14f155-6af155-10af165-15a+11 | |
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Contextual Info: bOE » • 0133107 00ÜD53b SEMELAB PLC TOT ■ S f l L B prpr M A G N A TEC BUZ 9 00 P NEW PRODUCT b u z s g ip SILICON IM-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES • • • |
OCR Scan |
buz905pbuz906po-247 | |
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Contextual Info: bQE D • 01331Ô7 GGGDSMS - T12 ■ - SEMELAB PLC SIILB ^ r -3 ° i-^ 3 prpr M AGNA r^ tec BUZ 905P BUZ 90BP NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, |
OCR Scan |
buz900pbuz901p | |
BUZ901P
Abstract: buz900p BUZ906P
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OCR Scan |
buz905pbuz906pbuz900pbuz901p+1 | |
BUZ900D
Abstract: BUZ50ASM BUZ50B-220SM
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buz45abuz46buz50abuz50a-220m+8 | |
BUZ900
Abstract: BUZ900P TO-3P BUZ900D BUZ902DP to-3 BUZ908DP BUZ901P BUZ905 SOT-227
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buz900buz901buz900dbuz901d+12 | |
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