BT412 Search Results
BT412 Price and Stock
onsemi MMBT4126LT1GPNP Bipolar Transistor |
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MMBT4126LT1G |
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MMBT4126LT1G | Tape & Reel | 59 Weeks | 21,000 |
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MMBT4126LT1G | Tape & Reel | 6,085 | 100 |
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| MMBT4126LT1G | Cut Tape | 6,085 | 1 |
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| MMBT4126LT1G | Tape & Reel | 9,000 |
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MMBT4126LT1G | Bulk | 200 |
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MMBT4126LT1G | 5,374 | 1 |
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| MMBT4126LT1G | 1,364 |
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MMBT4126LT1G | 3,000 | 1 |
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MMBT4126LT1G | 1 |
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MMBT4126LT1G | 50 Weeks | 3,000 |
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MMBT4126LT1G | 170 |
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MMBT4126LT1G | 27,000 | 51 Weeks | 3,000 |
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MMBT4126LT1G | 2,640 |
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MMBT4126LT1G | 6,300 |
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onsemi MMBT4124LT1GThe MMBT4124LT1G is a general-purpose NPN silicon transistor for switching and amplification applications. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT4124LT1G |
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MMBT4124LT1G | Tape & Reel | 59 Weeks | 30,000 |
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MMBT4124LT1G | Tape & Reel | 51,000 | 3,000 |
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| MMBT4124LT1G | Cut Tape | 9,000 |
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| MMBT4124LT1G | Tape & Reel | 9,000 |
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MMBT4124LT1G | 770 |
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MMBT4124LT1G | 6,000 | 1 |
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MMBT4124LT1G | 1 |
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MMBT4124LT1G | 59 Weeks | 39,000 |
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MMBT4124LT1G | 53 Weeks | 3,000 |
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MMBT4124LT1G | 53 Weeks | 3,000 |
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MMBT4124LT1G | 8,430 |
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MMBT4124LT1G | 42,018 |
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onsemi MMBT4126LT3GPNP Bipolar Transistor |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT4126LT3G |
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MMBT4126LT3G | Tape & Reel | 50 Weeks | 50,000 |
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MMBT4126LT3G | Tape & Reel | 20,000 |
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MMBT4126LT3G | Bulk | 100 |
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MMBT4126LT3G | 23,943 | 1 |
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MMBT4126LT3G | 39,062 | 1 |
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MMBT4126LT3G | 51 Weeks | 10,000 |
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CTS Corporation BDN06-3CB/T412- Trays (Alt: BDN06-3CB/T412) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BDN06-3CB/T412 | Tray | 2,000 |
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Amphenol Corporation BT-4120-10PD-Y70- Bulk (Alt: BT-4120-10PD-Y70) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BT-4120-10PD-Y70 | Bulk | 18 Weeks | 1,000 |
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BT412 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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CMBT4126Contextual Info: GENERAL PURPOSE TRANSISTOR P -N -P transistor M ark in S CM BT4126 = 5E P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN n u n 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR A B SO L U T E M A X IM U M R A TIN G S C ollector-base voltage open emitter |
OCR Scan |
cmbt4126 | |
BT412
Abstract: BT451 Bt 51 bt 330
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bt412bt451214tb154tb+2 | |
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Contextual Info: BT4124 GENERAL PURPOSE TRANSISTOR N -P -N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm M ark in g CM BT4124 = 5C 3.0 2.8 0.14 0.48 1 0.38 Ii 3 Pin configuration 1 I I1 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1.02 0.89" 0.60 0.40 2.00 1.80 |
OCR Scan |
cmbt4124bt4124 | |
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Contextual Info: GENERAL PURPOSE TRANSISTOR P -N -P transistor M ark in g P A C K A G E O U T L IN E D E T A IL S CM BT4125 = 5D ‘ A L L D IM E N S IO N S IN m m 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR A B SO L U T E M A X IM U M R A T IN G S Collector-base voltage open emitter |
OCR Scan |
bt412523a33t4 | |
BT4124Contextual Info: SIEMENS NPN Silicon Switching Transistor BT4124 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SM BT4124 sZ C Q68000-A8316 B SOT-23 E C Maximum Ratings |
OCR Scan |
smbt4124bt4124q68000-a8316ot-23+1 | |
AMP PBT connector 7 way
Abstract: EN3155 Cross Reference en3155 m39029 BOEING bacc63 D38999 series I II MS27615-KXXBXX MS27295 MS24254-16P aecma en3155 L-2119-E
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12-c3kv/15012-r1lm-300+10 | |
Mini-Circuits ERA-1SM
Abstract: era-5sm
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OCR Scan |
era-21era-33smera-51hela-10+3 | |
LZY-1Contextual Info: Self-Cooled High Power Amplifier 50Ω 50W 20 to 512 MHz Features Applications • • • • • • • • • • • • • • • LZY-1 saturated power 50W typ. high power with low distortion, -32 dBc typ. wide bandwidth, usable 10 - 525 MHz high gain, 42 dB typ. |
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lzy-1 | |
pn2222
Abstract: pn2907 NSDU01 2N4125 TN2219 "device marking" BC213 BC214 MPSW01A MPSW51A
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OCR Scan |
mpsw01ampsw51ansdu01t0-202+10 | |
BT412
Abstract: BB48 1334 A31 BH292 BK276 BK377 BL301
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bh292bj293bj360bj398+9 | |
transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
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OCR Scan |
transistors bc 557cbf366smd code 307cf199 transistor+6 | |
4851-4
Abstract: BT412 MA7300 LZY-1X
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bt4124851-4ma7300lzy-1x | |
AN-60-004Contextual Info: Self-Cooled VERY HIGH POWER 50W, 20 to 1000MHz up to 50W +47 dBm output FREQ. MHz MODEL NO. LZY-1 LZY-2 e GAIN, dB 20 - 512 500 -1000 39 40 ±1.5 ±1.5 LZY POWER, dBm Flatness Min. Output Min. Max. (1 dB Comp.) fU e +44 +43 Max. Output (Typ.) DYNAMIC |
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1000mhzbt412bt451an-60-004 | |
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Contextual Info: Self-Cooled High Power Amplifier 50Ω 50W 20 to 512 MHz Features Applications • • • • • • • • • • • • • • • LZY-1 saturated power 50W typ. high power with low distortion, -32 dBc typ. wide bandwidth, usable 10 - 525 MHz high gain, 42 dB typ. |
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Contextual Info: A m p l if ie r s RF Instrument 50 Q High Power 0.5 to 1000 MHz 1| * G A IN , dB 11 •Hi V TIA up to 1OW +40 dBm output FREQ. MHz ¡¡¡111 M A XIM U M POWER. dBm D YN AM IC RANGE ! AC POWER VSWR CAPD DATA Case Style ¡ ¡ ¡ llillll MODEL NO. TIA-900-10 |
OCR Scan |
tia-900-10tia-1000-4tia-1000- | |
2N3904 SOT-23
Abstract: 2N3904 2N4124 MMBT4124 2n3904 npn fairchild
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OCR Scan |
2n4124mmbt4124ot-232n3904+2 | |
ESC30-P20BC
Abstract: esc30p20bc esc30-s20 chromel alumel ESC30P16BC EN3155-004M2020 alumel BT-4116-10P-Y165 EN3155-003F2018 en3155, contact
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mil-dtl-83723en3155ba-4020-36ld-y165en3155-002mm2020+16 | |
BT412
Abstract: AP176 BT451 TIA-1000-1R8 TIA-1000-4 TIA-900-10 NF 2-20V
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tia-900-10tia-1000-4tia-1000-1r8ap176+4 | |
BT412Contextual Info: Self-Cooled High Power Amplifier 50Ω 50W 20 to 512 MHz Features Applications • • • • • • • • • • • • • • • LZY-1 saturated power 50W typ. high power with low distortion, -32 dBc typ. wide bandwidth, usable 10 - 525 MHz high gain, 42 dB typ. |
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bt412 | |
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Contextual Info: 2N4124 / BT4124 * D iscrete POW ER & S ig n a l Technologies National S e m i c o n d u c t o r “ BT4124 2N4124 SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynam ic range extends to 100 m A as a switch and to |
OCR Scan |
2n4124mmbt4124ot-232n3904+1 | |
BT412Contextual Info: AMPLIFIERS 50 Ω RF Instrument HIGH POWER 0.5 to 1000 MHz TIA up to 10W +40 dBm output FREQ. (MHz) MODEL NO. TIA-900-10 TIA-1000-4 TIA-1000-1R8 GAIN (dB) fL-fU Min. Flatness Max. 100-900 100-1000 0.50-1000 28 19 35 ±2.5 ±1.5 ±2.0 MAXIMUM POWER (dBm) |
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tia-900-10tia-1000-4tia-1000-1r8ap176+2 | |
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Contextual Info: Mini-Circuits - Specification for Amplifier - LZY-1 Amplifier print this page LZY-1 Frequency MHz fL - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range VSWR DC Power Max. Flatness Input no damage Min. NF dB Typ. 20-512 39 ±1.50 +44.00 +10.00 8.60 Lw=low range(fL to fU/2) U=upper range(fU/2 to fU) |
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bt412 | |
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Contextual Info: Mini-Circuits - Specification for Amplifier - LZY-2 Amplifier print this page LZY-2 Frequency MHz fL - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range VSWR Max. Flatness Input no damage Min. NF dB Typ. 500-1000 40 ±1.50 +43.00 +10.00 8.00 Lw=low range(fL to fU/2) U=upper range(fU/2 to fU) |
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bt451 | |
en3155, contact
Abstract: BACC63CN en3155 m39029 en3155 en3155 crimping tools BOEING bacc63 EN2997Y1 aecma en3155 bacc63cm EN3155-004m2020
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mil-dtl-83723ord20/18bt-4120-10p-y165bt-4120-10r-y165+15 | |