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BT2221
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Unknown
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Shortform Transistor PDF Datasheet |
Short Form |
PDF
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163.24KB |
1 |
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BT2221A
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Unknown
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Shortform Transistor PDF Datasheet |
Short Form |
PDF
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172.78KB |
1 |
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BT2221AT
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Unknown
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Shortform Transistor PDF Datasheet |
Short Form |
PDF
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172.78KB |
1 |
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BT2221T
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Unknown
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Shortform Transistor PDF Datasheet |
Short Form |
PDF
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163.24KB |
1 |
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BT2222
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Unknown
|
Shortform Transistor PDF Datasheet |
Short Form |
PDF
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163.24KB |
1 |
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BT2222
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Raytheon
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Selection Guide 1977 |
Scan |
PDF
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47.8KB |
1 |
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BT2222A
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Unknown
|
Shortform Transistor PDF Datasheet |
Short Form |
PDF
|
172.78KB |
1 |
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BT2222A
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Raytheon
|
Selection Guide 1977 |
Scan |
PDF
|
47.8KB |
1 |
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BT2222AT
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Unknown
|
Shortform Transistor PDF Datasheet |
Short Form |
PDF
|
172.78KB |
1 |
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BT2222T
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Unknown
|
Shortform Transistor PDF Datasheet |
Short Form |
PDF
|
163.24KB |
1 |
MMBT2222A
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Shikues Semiconductor
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Original |
PDF
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MMBT2222A
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Shenzhen Heketai Electronics Co Ltd
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NPN bipolar transistor in SOT-23 surface mount package, with 40 V collector-emitter voltage, 600 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 300. |
Original |
PDF
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MMBT2222A
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Shandong Jingdao Microelectronics Co Ltd
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NPN transistor in SOT-23 package with 40V VCEO, 600mA continuous collector current, 300mW power dissipation, and transition frequency up to 250MHz, suitable for high-frequency amplification and switching applications. |
Original |
PDF
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MMBT2222A
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CREATEK Microelectronics
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NPN small signal transistor in SOT-23 package, with 40 V VCEO, 600 mA continuous collector current, 300 mW power dissipation, and DC current gain up to 300, suitable for medium power amplification and switching applications. |
Original |
PDF
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MMBT2222A
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JCET Group
|
NPN transistor in SOT-23 package with 40V collector-emitter voltage, 600mA continuous collector current, 300mW power dissipation, and DC current gain ranging from 100 to 300. |
Original |
PDF
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MMBT2222AM
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JCET Group
|
MMBT2222AM is an NPN epitaxial planar transistor in a SOT-723 package with 40V collector-emitter breakdown voltage, 0.5A continuous collector current, and 300MHz transition frequency, suitable for high-speed switching and amplification applications. |
Original |
PDF
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MMBT2222ADW
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CREATEK Microelectronics
|
Dual NPN small signal transistor in SOT-363 package, with 40V VCEO, 600mA collector current, 200mW power dissipation, and transition frequency of 300MHz, suited for medium power amplification and switching applications. |
Original |
PDF
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MMBT2222AW
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CREATEK Microelectronics
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Dual NPN small signal transistor in SOT-323 package, with 40V collector-emitter voltage, 600mA continuous collector current, 200mW power dissipation, and transition frequency of 300MHz, suitable for medium power amplification and switching applications. |
Original |
PDF
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MMBT2222AT
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Shikues Semiconductor
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Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Original |
PDF
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MMBT2222A-G
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JCET Group
|
MMBT2222A NPN transistor in SOT-23 package with 40V collector-emitter voltage, 600mA continuous collector current, 300mW power dissipation, and DC current gain ranging from 100 to 300. |
Original |
PDF
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MMBT2222A
