BSZ120P03NS3 Search Results
BSZ120P03NS3 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| BSZ120P03NS3E G | Infineon Technologies | P-Channel MOSFETs; Package: PG-TSDSON-8; Package: S3O8 (3x3mm style SuperSO8); VDS (max): -30.0 V; RDS (on) (max) (@10V): 12.0 mOhm; RDS (on) (max) (@4.5V): -; RDS (on) (max) (@2.5V): -; | Original | 302KB | 9 | ||
| BSZ120P03NS3EGATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 40A TSDSON-8 | Original | 299.39KB | |||
| BSZ120P03NS3G | Infineon Technologies | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 40A TSDSON-8 | Original | 9 | |||
| BSZ120P03NS3GATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 40A TSDSON-8 | Original | 614.78KB |
BSZ120P03NS3 Price and Stock
Infineon Technologies AG BSZ120P03NS3GATMA1Trans MOSFET P-CH 30V 11A 8-Pin TSDSON EP T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSZ120P03NS3GATMA1 | 9,715 | 6 |
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BSZ120P03NS3GATMA1 | Tape & Reel | 5,000 | 52 Weeks | 5,000 |
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BSZ120P03NS3GATMA1 | 473 |
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BSZ120P03NS3GATMA1 | Cut Strips | 9,715 | 52 Weeks | 1 |
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BSZ120P03NS3GATMA1 | Tape & Reel | 3 | 100 |
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| BSZ120P03NS3GATMA1 | Cut Tape | 3 | 1 |
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BSZ120P03NS3GATMA1 | 212 | 1 |
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BSZ120P03NS3GATMA1 | 5,000 |
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BSZ120P03NS3GATMA1 | 53 Weeks | 5,000 |
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BSZ120P03NS3GATMA1 | 211,390 |
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Infineon Technologies AG BSZ120P03NS3 GMOSFETs P-Ch -30V -40A TSDSON-8 OptiMOS P3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSZ120P03NS3 G |
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Infineon Technologies AG BSZ120P03NS3GE8239ATMA1MOSFETs PCh 30V 40A (Alt: SP005414237) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSZ120P03NS3GE8239ATMA1 | 25 Weeks | 5,000 |
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Infineon Technologies AG BSZ120P03NS3EGATMA1Power Field-Effect Transistor, 11A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSZ120P03NS3EGATMA1 | 6,377 |
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Infineon Technologies AG BSZ120P03NS3EGPower Field-Effect Transistor, 11A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSZ120P03NS3EG | 530 |
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BSZ120P03NS3 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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120P3N
Abstract: IEC61249-2-21 JESD22 JESD22-A114 BSZ120P03NS3 G d20 diode
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BSZ120P03NS3 IEC61249-2-21 120P3N 120P3N IEC61249-2-21 JESD22 JESD22-A114 BSZ120P03NS3 G d20 diode | |
transistor C 2240
Abstract: IEC61249-2-21 JESD22 JESD22-A114
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BSZ120P03NS3E IEC61249-2-21 120P3NE transistor C 2240 IEC61249-2-21 JESD22 JESD22-A114 | |
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Contextual Info: BSZ120P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in S3O8 R DS on ,max 12 mΩ • Qualified according JEDEC 1) for target applications ID -40 A PG-TSDSON-8 • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications |
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BSZ120P03NS3E IEC61249-2-21 120P3NE 70angerous | |
PG-TSDSON-8
Abstract: 120P3N
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BSZ120P03NS3E IEC61249-2-21 120P3NE 726-BSZ120P03NS3EG PG-TSDSON-8 120P3N | |
igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
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PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
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lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J | |
TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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