BSS63 Search Results

Contextual Info: SMD Type SMD Type Transistors Product specification BSS63 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 PNP general purpose amplifier 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1

Contextual Info: r Z 7 SGS-THOMSON ^ 7# R L,[iera M©l BSS63 SMALL SIGNAL PNP TRANSISTOR Type Marking BSS63 T3 a SILICON EPITAXIAL PLANAR PNP TRANSISTORS • MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS • GENERAL PURPOSE LOW FREQUENCY APPLICATONS

Contextual Info: BSS63 _J V HIGH VOLTAGE P-N-P TRANSISTORS Silicon planar epitaxial transistor in a m icrominiature plastic package intended fo r application in thick and thin -film circuits. This transistor is intended fo r high voltage general purpose and switching

Contextual Info: High Voltage Transistors BSS63LT1 PNP Silicon 3 3 COLLECTOR 1 1 BASE 2 2 CASE 318–08, STYLE 6 SOT– 23 TO–236AB EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector– Emitter Voltage V CEO –100 Vdc Collector– Emitter Voltage (R BE = 10 kΩ)

BSS63

Contextual Info: SEMICONDUCTOR BSS63 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L L V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -6 V Collector Current IC -100 mA Emitter Current IE 100 mA Collector Power Dissipation

Contextual Info: Discontinued Closest Alternative Part is MMBT5401 SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 – SEPTEMBER 95 ✪ COMPLIMENTARY TYPE — BSS64 PARTMARKING DETAIL — BSS63 - T3 BSS63R - T6 BSS63 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE

BSS63

Contextual Info: SEMICONDUCTOR TECHNICAL DATA BSS63 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL RATING -110 V CBO -100 V CEO Emitter-Base Voltage

marking 721 sot23

Contextual Info: Philips Semiconductors Product specification PNP high-voltage transistor BSS63 FEATURES PINNING • Low current max. 100 mA PIN • High voltage (max. 100 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • High-voltage general purpose • Switching applications.

Contextual Info: BSS63 BSS63 C E SOT-23 B Mark: T3 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: BSS63L Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)110 I(C) Max. (A)100m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

BSS63

Abstract: bss63 bm BSS64 high gain PNP POWER TRANSISTOR "SOT23"
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSS63 PNP high-voltage transistor Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors Product data sheet PNP high-voltage transistor BSS63 FEATURES PINNING • Low current max. 100 mA PIN • High voltage (max. 100 V).

Contextual Info: ON Semiconductort High Voltage Transistor BSS63LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −100 Vdc Collector −Emitter Voltage RBE = 10 kΩ VCER Collector Current — Continuous 3 Vdc −110 1 IC −100 mAdc

MARKING M391

Abstract: BSS63LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors BSS63LT1 PNP Silicon 3 COLLECTOR 3 1 1 BASE 2 2 CASE 318–08, STYLE 6 SOT– 23 TO–236AB EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector– Emitter Voltage V CEO –100 Vdc Collector– Emitter Voltage (R BE = 10 kΩ)

BSS63LT1

Contextual Info: MOTOROLA Order this document by BSS63LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor BSS63LT1 COLLECTOR 3 PNP Silicon 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –100 Vdc Collector – Emitter Voltage

BCX41

Abstract: marking AMs 4 pin BCX42 BSS63 BSS64 bcx41 "sot23" ams SOT23
Contextual Info: BCX41, BSS64 NPN Silicon AF and Switching Transistors 3
For general AF applications
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BCX42, BSS63 PNP 2 1 Type Marking Pin Configuration BCX41 EKs 1=B 2=E 3=C SOT23

Contextual Info: BSS63LT1G, BSS63LT1G High Voltage Transistor PNP Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • COLLECTOR 3 Compliant NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101

BSS63

Abstract: bss63 bm on pnp low saturation transistor sot23 BSS64 MV TRANSISTOR SOT23 sot23 marking JR Philips BSS63
Contextual Info: Philips Semiconductors Product specification PNP high-voltage transistor BSS63 FEATURES PINNING • Low curren t max. 100 mA PIN • High voltage (max. 100 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • H igh-voltage general purpose

BSS63R

Abstract: BSS63 BSS64 S0T23
Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BSS63 * COMPLEMENTARY TYPE - BSS64 PARTMARKING DETAILS - BSS63 = T3 BSS63R = T6 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current

BSS63

Abstract: BSS63R BSS64
Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 – SEPTEMBER 95 ✪ COMPLIMENTARY TYPE — BSS64 PARTMARKING DETAIL — BSS63 - T3 BSS63R - T6 BSS63 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -110 V Collector-Emitter Voltage

BCX41

Abstract: bcx41 "sot23"
Contextual Info: BCX41, BSS64 NPN Silicon AF and Switching Transistors 3
For general AF applications
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BCX42, BSS63 PNP 2 1 Type Marking Pin Configuration BCX41 EKs 1=B 2=E 3=C SOT23

ic 556

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor BSS63LT1 COLLECTOR 3 PNP Silicon 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –100 Vdc Collector – Emitter Voltage RBE = 10 kΩ VCER 2 CASE 318 – 08, STYLE 6

BSS63LT1

Contextual Info: ON Semiconductort High Voltage Transistor BSS63LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –100 Vdc Collector–Emitter Voltage RBE = 10 kΩ VCER 3 Vdc –110 Collector Current — Continuous 1 IC –100 mAdc

marking of m7 diodes

Abstract: BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2
Contextual Info: FERRANTI 4 semiconductors BSS64 ! NPN S ilico n Planar H igh V o lta g e T ra n s is to DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the BSS63.

transistor marking code 7E SOT-23

Abstract: transistor dg sot-23 marking 1p transistor sot23 D6 TRANSISTOR MARKING m6 marking transistor sot-23 sot-23 MARKING CODE G1 TRANSISTOR 1P SOT23 transistor sot-23 Marking AR transistor G1 SOT-23 transistor cg sot-23
Contextual Info: FERRANTI semiconductors BSS63 PNP S ilico n Planar High V o lta g e T ra n s is to r D ES C R IPTIO N & This plastic encapsulated transistor is designed fo r any application requiring high vo lta g e capability a t relatively low collector currents. C o m p lem en tary to th e BSS64.