BSS31 Search Results

H6327

Contextual Info: Product specification BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 1.4 ID A • Avalanche rated • Qualified according to AEC Q101

Contextual Info: BSS315 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)1.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)

Contextual Info: BSS31 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A) Absolute Max. Power Diss. (W)3.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

PG-SOT23

Abstract: BSS316N JESD22-A114 L6327
Contextual Info: BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 ID 1.4 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23

BSS314PE

Abstract: JESD22-A114 L6327
Contextual Info: BSS314PE OptiMOS -P 3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 140 mΩ V GS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-23 • Qualified according AEC Q101

BSS315

Abstract: BSS315P JESD22-A114 L6327
Contextual Info: BSS315P OptiMOS -P 2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode 30 V V GS=10 V 150 mΩ V GS=4.5 V 270 ID •Logic level (4.5V rated) -1.5 • Avalanche rated A PG-SOT-23 • Qualified according to AEC Q101

BSS316N

Abstract: L6327 PG-SOT23
Contextual Info: BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 ID 1.4 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23

Contextual Info: Product specification BSS315P OptiMOS -P 2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode 30 V V GS=10 V 150 mΩ V GS=4.5 V 270 -1.5 ID •Logic level (4.5V rated) • Avalanche rated A PG-SOT-23 • Qualified according to AEC Q101

BSS314

Contextual Info: BSS314PE OptiMOS -P 3 Small-Signal-Transistor Features Product Summary VDS • P-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V VGS=-10 V 140 mW VGS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-23 • Qualified according AEC Q101

H6327

Abstract: marking YGs
Contextual Info: BSS314PE OptiMOS -P 3 Small-Signal-Transistor Features Product Summary VDS • P-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V VGS=-10 V 140 mW VGS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-23 • Qualified according AEC Q101

marking SYs

Contextual Info: BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 1.4 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23

BSS315P

Abstract: JESD22-A114 L6327
Contextual Info: BSS315P OptiMOS -P 2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode 30 V V GS=10 V 150 mΩ V GS=4.5 V 270 ID •Logic level (4.5V rated) -1.5 • Avalanche rated A PG-SOT-23 • Qualified according to AEC Q101

BSS314PE

Abstract: JESD22-A114 L6327 c4125
Contextual Info: BSS314PE OptiMOS -P 3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 140 mΩ V GS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-23 • Qualified according AEC Q101

M15098

Contextual Info: BSS314PE OptiMOS -P 3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 140 mΩ V GS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-23 • Qualified according AEC Q101

Contextual Info: BSS315P OptiMOS -P 2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode 30 V V GS=10 V 150 mΩ V GS=4.5 V 270 -1.5 ID •Logic level (4.5V rated) A • Avalanche rated PG-SOT-23 • Qualified according to AEC Q101

BSS315P H6327

Abstract: marking YCs BSS315P
Contextual Info: BSS315P OptiMOS -P 2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode 30 V V GS=10 V 150 mΩ V GS=4.5 V 270 -1.5 ID •Logic level (4.5V rated) • Avalanche rated A PG-SOT-23 • Qualified according to AEC Q101

Contextual Info: Product specification BSS314PE OptiMOS -P 3 Small-Signal-Transistor Features Product Summary VDS • P-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V VGS=-10 V 140 mW VGS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-23 • Qualified according AEC Q101

BSS316N

Abstract: JESD22-A114 L6327 PG-SOT23
Contextual Info: BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 ID 1.4 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23

DIODE ED 34

Contextual Info: BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 1.4 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23

Contextual Info: BSS314PE OptiMOS -P 3 Small-Signal-Transistor Features Product Summary 30 V VGS=-10 V 140 mW VGS=-4.5 V 230 VDS • P-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) -1.5 ID A • ESD protected PG-SOT-23 • Qualified according AEC Q101

STR WG 253

Abstract: PDCR 143
Contextual Info: SSI 32P4742/4742A/4746/4746A Read Channel with 1,7 ENDEC, 4-burst Servo ¿ ik m s y s h t is A TDK Group/Company Advance Information January 1995 DESCRIPTION FEATURES The SSI 32P4742/4742A/4746/4746A devices are high performance BiCMOS single chip read channel

igbt welding machine scheme

Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and

BSS87

Abstract: BSP315 SOT223 BSP171 BSS125
Contextual Info: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type M axim um Ratings N = N Channel P = P Channel BSP17 BSP88 BSP89 BSP92 BSP 125 BSP129* BSP135* BSP149* BSP171 BSP295 BSP296 BSP297 BSP298 BSP299 BSP315 BSP316 BSP317

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible