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    BSN6010 Search Results

    BSN6010 Datasheets (2)

    Philips Semiconductors
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BSN6010
    Philips Semiconductors N-channel enhancement mode MOS transistor Scan PDF 113.12KB 4
    BSN6010L
    Philips Semiconductors N-channel enhancement mode MOS transistor Scan PDF 113.6KB 4

    BSN6010 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BSN6010L

    Contextual Info: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN6010L FEATURES PINNING - SOT23 • High speed switching PIN SYMBOL • No secondary breakdown 1 g gate • Direct interface to C-MOS, TTL etc. 2 s source 3 d drain


    OCR Scan
    bsn6010l711002b011gds4q-101+3mbc3467110asb01100ss PDF

    D1100

    Abstract: BSN6010
    Contextual Info: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN6010 FEATURES PINNING - SOT23 • High speed switching PIN SYMBOL DESCRIPTION • No secondary breakdown 1 g gate • Direct interface to C-MOS, TTL etc. 2 s source


    OCR Scan
    bsn6010711002bmbc846d1100s1+1d1100 PDF

    BSN6010L

    Abstract: BSN601OL
    Contextual Info: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN6010L FEATURES PINNING - SOT23 • High speed switching • No secondary breakdown • Direct interface to C-MOS, TTL etc. PIN SYMBOL 1 2 3 g gate s source d drain


    OCR Scan
    bsn6010l11gg54mbc346711002b+2d1100ssbsn601ol PDF

    BSN6010

    Abstract: MAM273
    Contextual Info: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN6010 FEATURES PINNING - SOT23 • High speed switching PIN SYMBOL • No secondary breakdown 1 g gate • Direct interface to C-MOS, TTL etc. 2 s source 3 d drain DESCRIPTION


    OCR Scan
    bsn6010mam273011ddsdmbc846 PDF