BS170L Search Results

s170 TRANSISTOR

Abstract: s170 to92 2N7000 TO-92 BS170V
Contextual Info: P O T ALPHA SEMICONDUCTOR — •■ 2N7000/BS170L E xcellence in A n alo g P ow er P roducts N-Channel Enhancement-Mode MOS Transistor PRODUCT DESCRIPTION T he A LPH A S em iconductor 2N 7000 utilizes A L P H A ’S vertical DM O S technology. T his device is w ell suited for sw itching

Contextual Info: N-ChannelEnhancement-Mode MOS Transistor _ CQIOOIC CORPORATION 2N7000/BS170L DESCRIPTION ORDERING INFORMATION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where Bv of 60V and low on resistance under 5 ohms are required. The

Contextual Info: N-Channel Enhancement-Mode MOS Transistor caioqic CORPORATION 2N7000/BS170L DESCRIPTION ORDERING INFORMATION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where Bv of 60V and low on resistance under 5 ohms are required. The

BS170

Abstract: 2N7000 2n7000 equivalent transistor BS170 BS170L X2N7000 05ATC to92 rthja
Contextual Info: N-Channel Enhancement-Mode MOS Transistor CORPORATION 2N7000 / BS170L DESCRIPTION ORDERING INFORMATION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where BV of 60V and low on resistance under 5 ohms are required. The

2n7000

Abstract: BS170L X2N7000 TRANSISTOR2N7000
Contextual Info: N-Channel Enhancement-Mode MOS Transistor calocflc CORPORATION 2N7000/BS170L DESCRIPTION ORDERING INFORMATION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where Bv of 60V and low on resistance under 5 ohms are required. The