BGY112B
Abstract: SOT288C PHILIPS 4330 030 36300 vHF amplifier module BGY112A BGY112C FERROXCUBE 4330 4330 ferroxcube
Contextual Info: Philips Semiconductors Objective specification VHF amplifier modules BGY112A; BGY112B; BGY112C FEATURES DESCRIPTION • 7.5 V nominal supply voltage The BGY112A, BGY112B and BGY112C are three-stage VHF power amplifier modules. • 6 W output power Each module consists of three NPN silicon planar
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bgy112abgy112bbgy112cot288c+7msb0427110a2bsot288cphilips 4330 030 36300vhf amplifier moduleferroxcube 43304330 ferroxcube
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y112
Abstract: BGY112A BGY112B BGY112C DD302
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbSa^l GQ3QSÖD T4M M A P X Philips Components Data sheet status Preliminary specification date of issue May 1991 B G Y 1 1 2 A/1 1 2 B/1 1 2 C VHF amplifier modules PINNING - SOT288C DESCRIPTION A range of RF power amplifier
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/112b/112cbgy112abgy112bbgy112c+5bbs3r31dd302bgy112a/112b/112cot288cy112
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1n8211n821a1n8231n823a+161n8251n825a1n8271n827a1n8291n829abf0262abf0262om3351n5821idom336om2061om926buk645om2060bly94
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Contextual Info: N AUER PHILIPS/DISCRETE bTE D Philips Components • bbSaiai OQBQEfiD =144 BGY112A/112B/112C Data sheet status Preliminary specification date of issue May 1991 VHF amplifier modules PINNING - SOT288C DESCRIPTION A range of RF power amplifier modules designed for use in
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RF Power Modules
Abstract: BGY47 Philips Semiconductors RF Power Modules BGY145B BGY110E SOT-246 BGY110F "RF Power Modules" GP 132
Contextual Info: Philips Semiconductors RF power modules Type number survey INTRODUCTION In this alphanumeric list we present all RF power modules mentioned in this handbook, together with the most important data. TYPE NUMBER ENVELOPE Vs V f Pl (MHz) (W) Gp (dB) PAGE BGY32
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bgy32bgy33bgy35bgy36+14bgy43bgy46abgy46bbgy47abgy95abgy95brf power modulesbgy47philips semiconductors rf power modulesbgy145bbgy110esot-246bgy110fgp 132
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Amplifier Modules
Abstract: sot288c philips vhf amplifier module philips rf power amplifier module
Contextual Info: Philips Components BGY112A/112B/112C Data sheet status Preliminary specification date of issue May 1991 VHF amplifier modules PINNING - SOT288C DESCRIPTION A range of RF power amplifier modules designed for use in portable communications equipment with nominal 7.5 V electrical battery
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bgy112a/112b/112cot288camplifier modulessot288c+2philips vhf amplifier modulephilips rf power amplifier module
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SOT262
Abstract: power amplifier blf278 BLF378 BGY47 321 SOT BGY145 sot183 BGY43 SOT246
Contextual Info: 66 RF/Microwave Devices RF Power MOS Transistors Package Outline Type No. cont. Output Power Sync (W) VDS (V) f (MHz) Power Gain (dB) ^im (dB) >D (mA) 13 r -52 -52 3000 2 x 4600 50 TV TRANSPOSERS (band 3, f = 174-230 MHz, Class A Operation) BLF346 BLF348
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blf346blf348ot-119ot-262+14blf276blf278blf248blf368blf378ot-119d3sot262power amplifier blf278bgy47321 sotbgy145sot183bgy43sot246
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Philips Semiconductors RF Power Modules
Abstract: RF Power Modules Philips Semiconductors Selection Guide BGY110E "RF Power Modules"
Contextual Info: Philips Semiconductors RF power modules Selection guide INTRODUCTION The following tables represent our complete range of RF power modules. VHF modules for mobile transminers f MHz Pl (W) Vs (V) 18 12.5 68 to 88 18 12.5 80 to 108 18 12.5 132 to 156 18 12.5
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ot132bot288cot183aphilips semiconductors rf power modules+3rf power modulesphilips semiconductors selection guidebgy110e
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