| BDP950 |
|
Infineon Technologies
|
PNP Silicon AF Power Transistor |
Original |
PDF
|
44.27KB |
4 |
| BDP950 |
|
Infineon Technologies
|
Ic = 500 mA; Package: PG-SOT223-4; Polarity: PNP; VCEO (max): 60.0 V; Ptot (max): 5,000.0 mW; hFE (min): 85.0 - 475.0; IC: 3,000.0 mA; |
Original |
PDF
|
536.4KB |
8 |
| BDP950 |
|
Siemens
|
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) |
Original |
PDF
|
41.39KB |
4 |
| BDP950 |
|
Siemens
|
RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
Original |
PDF
|
465.63KB |
37 |
| BDP950E6327 |
|
Infineon Technologies
|
TRANS GP BJT PNP 60V 3A 4SOT-223 T/R |
Original |
PDF
|
69.74KB |
7 |
| BDP950E6327 |
|
Infineon Technologies
|
Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP AF 60V SOT-223 |
Original |
PDF
|
|
8 |
| BDP950E6327HTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 60V 3A SOT-223 |
Original |
PDF
|
527.89KB |
|
| BDP950E6778 |
|
Infineon Technologies
|
TRANS GP BJT PNP 60V 3A 4SOT-223 T/R |
Original |
PDF
|
69.74KB |
7 |
| BDP950GEG |
|
Infineon Technologies
|
TRANS GP BJT PNP 60V 3A 4SOT-223 |
Original |
PDF
|
69.74KB |
7 |
| BDP950H6327 |
|
Infineon Technologies
|
Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP AF PWR 60V 3A SOT223 |
Original |
PDF
|
|
8 |
| BDP950H6327XTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 60V 3A SOT223 |
Original |
PDF
|
533.24KB |
|
| BDP950-T&R |
|
Infineon Technologies
|
TRANS GP BJT PNP 60V 3A 4SOT-223 T/R |
Original |
PDF
|
69.74KB |
7 |
