| BD241B |
|
Bourns
|
NPN SILICON POWER TRANSISTORS |
Original |
PDF
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82.52KB |
5 |
| BD241B |
|
Fairchild Semiconductor
|
NPN Epitaxial Silicon Transistor |
Original |
PDF
|
27.5KB |
3 |
| BD241B |
|
Motorola
|
2.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 25 WATTS |
Original |
PDF
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106.06KB |
4 |
| BD241B |
|
Motorola
|
Complementary Silicon Plastic Power Transistors |
Original |
PDF
|
142.04KB |
6 |
| BD241B |
|
On Semiconductor
|
POWER TRANSISTORS COMPLEMENTARY SILICON |
Original |
PDF
|
111.19KB |
6 |
| BD241B |
|
Philips Semiconductors
|
Silicon Epitaxial Base Power Transistors |
Original |
PDF
|
239.03KB |
9 |
| BD241B |
|
Power Innovations
|
NPN SILICON POWER TRANSISTORS |
Original |
PDF
|
88.5KB |
6 |
| BD241B |
|
STMicroelectronics
|
COMPLEMENTARY SILICON POWER TRANSISTORS |
Original |
PDF
|
32.15KB |
4 |
| BD241B |
|
STMicroelectronics
|
complementary power transistor |
Original |
PDF
|
50.74KB |
4 |
| BD241B |
|
STMicroelectronics
|
COMPLEMENTARY SILICON POWER TRANSISTORS |
Original |
PDF
|
66.47KB |
4 |
| BD241B |
|
USHA
|
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
Original |
PDF
|
48KB |
2 |
| BD241B |
|
Boca Semiconductor
|
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS |
Scan |
PDF
|
141.27KB |
3 |
| BD241B |
|
Continental Device India
|
Semiconductor Device Data Book 1996 |
Scan |
PDF
|
91.35KB |
1 |
| BD241B |
|
Continental Device India
|
NPN PLASTIC POWER TRANSISTORS / PNP PLASTIC POWER TRANSISTORS |
Scan |
PDF
|
55.11KB |
2 |
|
|
| BD241B |
|
Continental Device India
|
TO-220 NPN Power Package Transistors |
Scan |
PDF
|
72.98KB |
1 |
| BD241B |
|
Fairchild Semiconductor
|
NPN EPITAXIAL SILICON TRANSISTOR |
Scan |
PDF
|
29.26KB |
1 |
| BD241B |
|
Ferranti Semiconductors
|
Quick Reference Guide 1985 |
Scan |
PDF
|
81.74KB |
3 |
| BD241B |
|
Ferranti Semiconductors
|
Power Transistors 1977 |
Scan |
PDF
|
66.88KB |
3 |
| BD241B |
|
General Electric
|
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 40W. |
Scan |
PDF
|
110.32KB |
3 |
| BD241B |
|
Micro Electronics
|
Semiconductor Device Data Book |
Scan |
PDF
|
54.93KB |
1 |
