BCP54 Search Results

Contextual Info: BCP54,55,56 NPN Silicon Transistor Power amplifier application Elektronische Bauelemente RoHS Compliant Product B C   E f C f   f SOT-223 f 5 5  fe e fe e  f  fe e  1 2 3 MAXIMUM RATINGS* TA=25Я unless otherwise noted

smd transistor js

Abstract: smd transistor bcp56 transistor bcp56 bcp55 bcp54 smd transistor BCP54 bcp55 to BCP56 bcp55 sot BCP54-10
Contextual Info: Transistors SMD Type NPN Medium Power Transistor BCP54; BCP55; BCP56 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 High collector current +0.1 3.00-0.1 1.3 W power dissipation. +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 1

F MARKING

Contextual Info: BCP5401 PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 Features Designed for gereral prupose application requiring high breakdown voltage. 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER REF. A B C D E F Marking:5401 XXXX xxxx = Date Code

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BCP51 BCP52 BCP53 SOT-223 Formed SMD Package General Purpose Medium Power DC Applications Complementary BCP54 BCP55 and BCP56

BCP51

Abstract: BCP51-10 BCP51-16 BCP52 BCP52-10 BCP52-16 BCP53 BCP54 BCP56 VPS05163
Contextual Info: BCP51.BCP53 PNP Silicon AF Transistors
For AF driver and output stages
High collector current 4
Low collector-emitter saturation voltage
Complementary types: BCP54.BCP56 NPN 3 2 1 Type Marking Pin Configuration BCP51 BCP 51 1=B 2=C 3=E 4=C SOT223

Contextual Info: BCP54-10 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.63 h(FE) Max. Current gain.160

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors BCP54,55,56 SOT-223 TRANSISTOR NPN FEATURES Power amplifier applications 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted BCP54 BCP55

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors BCP51,52,53 SOT-223 TRANSISTOR PNP FEATURES z z z z For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54.BCP56 (NPN)

BCP51-BCP53

Abstract: BCP51 BCP51-16 BCP52 BCP52-16 BCP53 BCP53-10 BCP53-16 BCP54 BCP56
Contextual Info: BCP51.-BCP53. PNP Silicon AF Transistors • For AF driver and output stages 4 • High collector current 3 2 • Low collector-emitter saturation voltage 1 • Complementary types: BCP54 . BCP56 NPN • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101

BCP51

Abstract: BCP51-10 BCP51-16 BCP54
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCP51 ISSUE 3 – AUGUST 1995 ✪ FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE sat COMPLEMENTARY TYPE – BCP54 PARTMARKING DETAILS – BCP51 BCP51 – 10 C E C B BCP51 – 16

sot223 layout

Contextual Info: BCP54.-BCP56. NPN Silicon AF Transistors • For AF driver and output stages 4 • High collector current 3 2 • Low collector-emitter saturation voltage 1 • Complementary types: BCP51.BCP53 PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101

Contextual Info: BCP54 BCP54 C B SOT-223 C E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

FE SOT223

Contextual Info: BCP54.BCP56 NPN Silicon AF Transistors 4 • For AF driver and output stages • High collector current 3 • Low collector-emitter saturation voltage 2 • Complementary types: BCP51.BCP53 PNP 1 Pin Configuration VPS05163 Type Marking BCP54 BCP54 1=B

Contextual Info: BCP51.BCP53 PNP Silicon AF Transistors
For AF driver and output stages
High collector current 4
Low collector-emitter saturation voltage
Complementary types: BCP54.BCP56 NPN 3 2 1 Type Marking Pin Configuration BCP51 BCP 51 1=B 2=C 3=E 4=C SOT223

bcp54-16

Abstract: BCP54 BCP5410
Contextual Info: Not Recommended for New Design Please Use FZT493 SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCP54 ISSUE 3 – AUGUST 1995 ✪ FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE sat COMPLEMENTARY TYPE – BCP51 PARTMARKING DETAILS –

bcp53 SOT-223

Abstract: bcp53 transistor datasheet BCP51 bcp51 smd transistor smd transistor bcp53 sot-223 rth BCP52 BCP53 BCP54 BCP55
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BCP51 BCP52 BCP53 SOT-223 Formed SMD Package General Purpose Medium Power DC Applications Complementary BCP54 BCP55 and BCP56 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

Contextual Info: BCP54-16 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.250

Contextual Info: • BCP54 BCP55 BCP56 b b Sa ^ a i 0Q245B1 fllT HIAPX N AflER PHILIPS/DISCRETE b7E D SILICON PLANAR EPITAXIAL TRANSISTORS Medium power npn transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. They are general purpose transistors, primarily designed for audio amplifier output

bcp55

Abstract: BCP51 BCP53 BCP54 BCP54-10 BCP54-16 BCP55-10 BCP55-16 BCP56 VPS05163
Contextual Info: BCP54.BCP56 NPN Silicon AF Transistors
For AF driver and output stages 4
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP51 . BCP53 PNP 3 2 1 Type Marking Pin Configuration BCP54 BCP 54 1=B 2=C 3=E 4=C

BCP53

Abstract: bcp55 BCP51 BCP52 BCP54 BCP54-16 BCP55-10 BCP56
Contextual Info: Philips Semiconductors Product specification NPN medium power transistors BCP54; BCP55; BCP56 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). DESCRIPTION 1 base 2, 4 APPLICATIONS collector 3 emitter • Switching. DESCRIPTION

BCP51

Abstract: sot 223 52 10a BCP53 bcp53 SOT-223 BCP53-10 BCP54 BCP56 BCP51-10 BCP51-16 BCP52
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors BCP51,52,53 SOT-223 TRANSISTOR PNP 1 FEATURES z z z z For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54.BCP56 (NPN)

SMD IC ts 4141

Abstract: sot-223 rth bcp55 BCP51 BCP52 BCP53 BCP54 BCP56 bcp53 SOT-223
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BCP54 BCP55 BCP56 SOT-223 Formed SMD Package General Purpose Medium Power DC Applications Complementary BCP51 BCP52 and BCP53

BCP51

Abstract: BCP51-10 BCP51-16 BCP52 BCP52-10 BCP52-16 BCP53 BCP54 BCP56 VPS05163
Contextual Info: BCP51.BCP53 PNP Silicon AF Transistors
For AF driver and output stages
High collector current 4
Low collector-emitter saturation voltage
Complementary types: BCP54.BCP56 NPN 3 2 1 Type Marking Pin Configuration BCP51 BCP 51 1=B 2=C 3=E 4=C SOT223

sot-223 rth

Abstract: BCP53 BCP54 bcp55 smd transistor bcp53 BCP51 BCP52 BCP56
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BCP54 BCP55 BCP56 SOT-223 Formed SMD Package General Purpose Medium Power DC Applications Complementary BCP51 BCP52 and BCP53 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise