| BAV170 |
|
Diodes Incorporated
|
Introducing Very Low Leakage SOT-23 Diodes: |
Original |
PDF
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44.03KB |
2 |
| BAV170 |
|
Diodes Incorporated
|
DUAL SURFACE MOUNT LOW LEAKAGE DIODE |
Original |
PDF
|
77.23KB |
4 |
| BAV170 |
|
Galaxy Semi-Conductor Holdings
|
Low-leakage double diode |
Original |
PDF
|
170.16KB |
4 |
| BAV170 |
|
Infineon Technologies
|
Silicon Low Leakage Diode Array |
Original |
PDF
|
40.59KB |
4 |
| BAV170 |
|
Infineon Technologies
|
Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns; |
Original |
PDF
|
70.69KB |
6 |
| BAV170 |
|
Kexin
|
Low Leakage Double Diodes |
Original |
PDF
|
36.74KB |
2 |
| BAV170 |
|
NXP Semiconductors
|
BAV170 - Low-leakage double diode - Cd max.: 2 pF; Configuration: dual c.c. ; IF max: 215 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V |
Original |
PDF
|
74.42KB |
9 |
| BAV170 |
|
PanJit Semiconductors
|
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES |
Original |
PDF
|
94.27KB |
3 |
| BAV170 |
|
Philips Semiconductors
|
High-speed switching diode |
Original |
PDF
|
57.52KB |
8 |
| BAV170 |
|
Philips Semiconductors
|
Low-leakage double diode |
Original |
PDF
|
54.91KB |
8 |
| BAV170 |
|
Philips Semiconductors
|
Low-Leakage Double Diode |
Original |
PDF
|
59.4KB |
12 |
| BAV170 |
|
Siemens
|
Silicon Low Leakage Diode Array (Low leakage applications Medium speed switching times Common cathode) |
Original |
PDF
|
100.48KB |
4 |
| BAV170 |
|
Siemens
|
RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
Original |
PDF
|
465.63KB |
37 |
| BAV170 |
|
TY Semiconductor
|
Low Leakage Double Diodes - SOT-23 |
Original |
PDF
|
92.2KB |
2 |
|
|
| BAV170 |
|
Unknown
|
Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
PDF
|
83.96KB |
1 |
| BAV170,215 |
|
NXP Semiconductors
|
Low-leakage double diode - Cd max.: 2 pF; Configuration: dual c.c. ; IF max: 215 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
Original |
PDF
|
74.55KB |
9 |
| BAV170235 |
|
NXP Semiconductors
|
RECTIFIER DIODE, 2 ELEMENT, 0.21 |
Original |
PDF
|
313.07KB |
|
| BAV170-7-F |
|
Diodes Incorporated
|
Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE ARRAY 85V 125MA SOT23 |
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PDF
|
|
4 |
| BAV170-7-F |
|
Diodes Incorporated
|
DUAL SURFACE MOUNT LOW LEAKAGE DIODE |
Original |
PDF
|
70.44KB |
3 |
| BAV170-7-F-52 |
|
Diodes
|
Switching Standard Diode SOT23 T |
Original |
PDF
|
82.65KB |
4 |
