B3535 Search Results

B3535

Contextual Info: SAW Components SAW Diplexer Short range devices Series/type: Ordering code: B3535 B3535A410 Date: Version: January 20, 2012 2.0  EPCOS AG 2012. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.

c5021-0

Contextual Info: PL502-30 750kHz – 800MHz Low Phase Noise VCXO for 12 to 25MHz Crystals XIN VDD VDD VDD VDD SEL0^ SEL1^ OUTSEL1^ 65 mil 25 24 23 22 21 20 19 18 26 XOUT 27 SEL3^ 28 SEL2^ 29 OE_CTRL 30 VCON 31 Die ID: B3535-43 Name Value Size 62 x 65 mil Reverse side GND

B3535

Contextual Info: SAW Components SAW Diplexer Short range devices Series/type: Ordering code: B3535 B3535A410 Date: Version: December 20, 2012 2.1  EPCOS AG 2012. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.

Contextual Info: PL602-30 750kHz – 800MHz Low Phase Noise XO for 12 to 25MHz Crystals XIN VDD VDD VDD SEL0^ SEL1^ OUTSEL1^ 65 mil VDD •       750kHz to 800MHz output range. Low phase noise output  -127dBc/Hz for 155.52MHz @ 10kHz offset  -115dBc/Hz for 622.08MHz @ 10kHz offset

MBR3545

Abstract: MBR-3535
Contextual Info: MBR3520 MBR3535 MBR3545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR3545 is a M oto ro la P referred D evice Sw itchm ode Power R ectifiers SCHOTTKY BARRIER RECTIFIERS . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art

B3597

Abstract: B3603 4JD7A35 2N2649 B3604 bfs23 BLY25 sdt1665 2N2485 MHT9003
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT

3148b

Contextual Info: MBR3520 MBR3535 MBR3545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR3545 is a Motorola Preferred Device Switchmode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art

Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

BFS22

Abstract: 2N3717 B3603 2N2485 bfs23 Yamatake B3613 B36-1 B3465 MP8235
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T