BB112
Abstract: TI F 540 D02B
Contextual Info: N AMER PHILIPS/ DIS CRETE tilE J> m bbSBTBl GQ2b3flG 370 HIA P X B13112 A SILICON PLANAR VARIABLE CAPACITANCE DIODE The B B 112 is a single 9 V variable capacitance diode in a plastic encapsulation for application in tuning circuits in a.m. receivers. The diodes are supplied in matched sets of three items.
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hb53131
BB112
BB112
OD-69
TI F 540
D02B
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B1317
Abstract: B1318 b1319 b1316 B1314 CY7B131
Contextual Info: CY7B131 CY7B141 1K x 8 DualĆPort Static RAM output enable OE . BUSY flags are proĆ Features Functional Description D The CY7B131 and CY7B141 are highĆ speed BiCMOS 1K by 8 dualĆport static RAMS. Two ports are provided to permit independent access to any location in
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CY7B131
CY7B141
CY7B131
CY7B141
16bit
B1317
B1318
b1319
b1316
B1314
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B1311
Abstract: B13117 7B131-20 CY7B131-20JI B-1311
Contextual Info: fax id: 5209 1CY 7B1 31 CY7B131 CY7B141 1Kx8 Dual-Port Static RAM Features • • • • • • • • 0.8-micron BiCMOS for high performance Automatic power-down TTL compatible Capable of withstanding greater than 2001V electrostatic discharge Fully asynchronous operation
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CY7B131
CY7B141
CY7B141
CY7B131;
16-bit
B1311
B13117
7B131-20
CY7B131-20JI
B-1311
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