AT002D8 Search Results

Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator In 16 Lead SOIC1,2 ,4 ,8 dB Bits DC-2 GHz . i f t ' - f r ' 1' :! *C » AT002D8-25 Features 1 , 2 , 4 , 8 dB Bits Designed for Commercial Applications Surface Mount 16 Lead SO IC Low Power Consumption 8 dB 1 dB 2 dB

AT002D8-25

Abstract: AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10
Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator In 16 Lead SOIC1,2 ,4 ,8 dB Bits DC-2 GHz AT002D8-25 Features 1 , 2 , 4 , 8 dB Bits D esigned for C om m ercial Applications S urface M ount 16 Lead S O IC Low P ow er C onsum ption 8 dB 1 dB 2 dB 4 dB Description T h e A T 0 0 2 D 8 -2 5 is a M M IC F E T Digital A ttenuator

AT002D8-31

Contextual Info: GaAs 4 Bit Digital Attenuator 1,2, 4, 8 dB Bits DC-2 GHz EHAlpha AT002D8-31 Features •31 ■ Low DC Power Consumption ■ Attenuation in 1 dB Steps to 15 dB with High Accuracy ■ 14 Lead Hermetic Surface Mount Package ■ Capable of Meeting MIL-STD Requirements6

AT002D8-31

Contextual Info: GaAs 4 Bit Digital Attenuator 1, 2, 4, 8 dB Bits DC–2 GHz AT002D8-31 Features -31 • Low DC Power Consumption ■ Attenuation in 1 dB Steps to 15 dB with High Accuracy ORIENTATION MARK 0.270 6.86 mm MAX. 0.050 (1.27 mm) 0.395 (10.03 mm) MAX. ■ 14 Lead Hermetic Surface Mount Package

Contextual Info: GaAs 1C 4 Bit Digital Attenuator 1, 2, 4, 8 dB Bits DC-2 GHz EH A lp h a AT002D8-31 Features -31 • Low DC Power Consumption ■ Attenuation in 1 dB Steps to 15 dB with High Accuracy ■ 14 Lead Hermetic Surface Mount Package ■ Capable of Meeting MIL-STD

Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator in 1,2,4,8 dB Bits DC-2 GHz ES Alpha AT002D8-31 Features • 1, 2, 4, 8 dB Bits ■ Designed for Military Applications ■ Surface Mount 14 Lead Metal Package ■ Low Power Consumption ■ Meets M IL -S T D -8 8 3 Screening Requirements

at002d8-25

Abstract: 2w, GaAs FET
Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator In 16 Lead SOIC1,2,4,8 dB Bits DC-2 GHz AT002D8-25 Features 1, 2, 4, 8 dB Bits Designed for Commercial Applications Surface Mount 16 Lead SOIC Low Power Consumption 8 dB 1 dB 2 dB 4 dB Description The AT002D8-25 is a MMIC FET Digital Attenuator

Contextual Info: GaAs 4 Bit Digital Attenuator 1, 2, 4, 8 dB Bits DC-2 GHz ESAlpha AT002D8-31 F eat ur e s • Low DC Power Consumption -31 ■ Attenuation in 1 dB Steps to 15 dB with High Accuracy ■ 14 Lead Hermetic Surface Mount Package ■ Capable of Meeting MIL-STD Requirements6

Contextual Info: Section 2 RF GaAs MMIC Products in Metal Packages Numerical Index Part Number Page Part Number Page Part Number Page AD004T2-00 2-44 AK006R2-01 2-30 AS006M1-01 2-8 AD004T2-11 2-44 AK006R2-10 2-30 AS006M1-10 2-a AE002M2-29 2-74 AK006R2-00 2-28 AS006M2-00 2-16

DSB3665-02

Contextual Info: High Power Multi-Throw UHF PIN Switches EHAlpha DSB3665-01, DSB3665-02, DSB3667-01 Features Hermetically Sealed Chips Stripline and T O -8 Can Packages SP2T and SP3T Designs 100 W att CW Operation Maximum Ratings 10 to 1000 MHz Operating Temperature: -6 5 °C to +150°C

Contextual Info: GaAs MMIC Power Amplifier [jHAIph in S O I C 16 Plastic Package AP103-64 Features • Saturated Power Up To 31 dBm ■ 6 Volt Operation ■ Efficiency Up To 65% ■ Idle Current Typically Less Than 80 mA ■ On Chip Bias Network Converts - 4 Volt Supplies

Contextual Info: GaAs MMIC 2 Watt High Linearity ËBÀlph Cellular SPDT Switch DC-2000 MHz A S 1 16-59 Features • High Linearity 50 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Extremely Low Cost ■ Requires Fixed Positive Bias ■

Contextual Info: •ísSKS GaAs MMIC Two Watt High î ? ‘ 1 _. Linearity Cellular SPDT Switch EBAIp'hi AS103-59 Features ■ High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control

Contextual Info: ËSAlph 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Chip Layout Features • Broad Coverage of K a-B and ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 G H z ■ Dual Drain Bias ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface Electrical Specifications at 25°C

Contextual Info: GaAs SPDT FET MMIC 4 Watt TR Switch ESAlph in 8 Lead SOIC Package DC-2.5 GHz AH002R2-12 Features • TR Switch ■ Low Insertion Loss < 0.5 dB @ 900 MHz ■ Designed for Cellular Radio Applications ■ Medium Power Handling Capability, 1 dB Compressed at 5W, 900 MHz, -1 0 V Bias

SMS1526-10

Contextual Info: Schottky Mixer and Detector Diodes in EEAlpha Surface Mount Plastic Packages SMS Series Features For High Volume Commercial Applications SOT 23 SOD 323 S m all Surface M ount Packages SOT 143 Low C onversion Loss T ight P aram eter D istribution High Signal Sensitivity

Contextual Info: GaAs MMIC Two Watt High Linearity EH Alpha Cellular SPDT Switch in SS0P8 Package AS358-62 Features • High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10 V Control Voltages

Contextual Info: GaAs MMIC SPDT FET Switch Non-Reflective DC-6 GHz • EBAlph . . . . - . * »■ ■ ■ ■V.s-l AS006M2-01, AS006M2-10, AS004M2-08, AS004M2-11 Features ■ Broadband DC-6 GHz ■ Non-Reflective ■ Low DC Power Consumption ■ Excellent Intermodulation ProductsYTemp. Stability

Contextual Info: GaAs MMIC FET Transfer Switch DC-4 GHz AD004T2-00, AD004T2-11 Features Broad Bandwidth Low DC Power Dissipation < 20 ^A Low Differential Phase Between Paths Meets M IL -S T D -88 3 Screening Requirements J2 Chip Size 30 x 39 x 8 Mils J3 Description The A D 004T2-00 is a GaAs 4 Port FET switch

at002d8-25

Abstract: soic 14
Contextual Info: MMICs Æ- Æ'- SOT 23 SOT 143 Control FETs in SOT Packages Insertion Loss max dB Isolation (min) dB Package Style Comments Part Number Frequency GHz AF002C1-32 D C - 2 .5 0.7 (0.2) dB 14(7) dB SOT 143 New, Low Cost AF002C1-39 DC - 2.5 0.7 (0.2) dB 14(7) dB

AF002C1-32

Abstract: AF002C1-39 E 212 fet AS006M2-10 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01 S443
Contextual Info: GaAs MMIC Control FET in SOT 143 03A lp ft DC-2.5 GHz AF002C1-32 Features • Low Cost ■ Small SOT 143 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Block Absolute Maximum Ratings Description RF Input Power:

AT002D8-25

Abstract: AD310-25 SOIC-16 AD310 DC-10GHZ
Contextual Info: GaAs 1C 4 Bit Digital Attenuator 1 dB LSB DC-2 GHz ESAlpha AD310-25 Features 9QC-16 • Attenuation in 1 dB Steps to 15 dB with High Accuracy 0 .0 5 0 - 1 .2 7 m m B S C P IN 16 ■ Designed for Cellular Radio Applications ■ Low DC Power Consumption PIN

AS117-45

Abstract: AD004T2-00 AK006R2-01
Contextual Info: GaAs MMIC FET10 Watt Diversity Switch In SOW 16 Package DC-2.0 GHz • " " ■ ■ ■ « ■ ■ ■ 03 Alpha t v ■,. : v r - r ^ - .n I ^w A S 11 7 -4 5 Features High Power P - 1 dB > 10 Watts Integrated Decoder Chip that Provides Two Line Voltage Control

pin diode limiter

Abstract: MMIC limiter AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10
Contextual Info: gQAIpl Switch and Limiter Modules CSB7003-02 Features Stripline Mount Shunt Mounted Limiter in 50£2 Line Switch and Limiter Functions through 18 GHz Description This series of modules consists of a single PIN diode shunt mounted in a 50£2 hermetically sealed package.