2006 - P0110009P
Abstract: Susumu RL series part Marking KP029J P0120009P RR0816 marking c7 sot-89
Text: P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) Features Functional Diagram , of devices GaAs Power FET 1000 KP029J · Wireless communication system · Cellular, PCS , Units P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) Typical Characteristics , Technical Note 2W GaAs Power FET (Pb-Free Type) 90 3.0 45 4.0 1.2GHz 2.0 S21 4.0 , P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) Ids=400mA Ids=350mA 80 80 60
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P0120009P
48dBm
OT-89
P0120009P
P0110009P
Susumu RL series part Marking
KP029J
RR0816
marking c7 sot-89
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P0110009P
Abstract: gaas fet marking a ISO-14001 KP029J P0120009P RR0816 48dBm High power fet 2.4ghz
Text: P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) Features SUMITOMO ELECTRIC 4 , of devices Container P0120009P Applications GaAs Power FET 2.11-2.17GHz Application , Technical Note 2W GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC Typical Characteristics Power , /GaAsIC/ -2- P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC , P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC Ids=400mA Ids
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P0120009P
48dBm
OT-89
17GHz
KP029J
P0120009P
P0110009P
gaas fet marking a
ISO-14001
KP029J
RR0816
48dBm High power fet 2.4ghz
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2011 - Not Available
Abstract: No abstract text available
Text: < High-power GaAs FET (small signal gain stage) > MGF0921A L & S BAND / 2W SMD non - matched DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers , , ratings, limits are subject to change. 1 < High-power GaAs FET (small signal gain stage) > MGF0921A L & S BAND / 2W SMD non - matched MGF09121A TYPICAL CHARACTERISTICS < High-power GaAs FET , (Ta=25ï°C,VD=10V,ID=500mA, Reference Plane see Fig.1) < High-power GaAs FET (small signal gain
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MGF0921A
MGF0921A
33dBm
17dBm
500mA
50pcs)
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2011 - Not Available
Abstract: No abstract text available
Text: < High-power GaAs FET (small signal gain stage) > MGF0921A L & S BAND / 2W SMD non - matched DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers , < High-power GaAs FET (small signal gain stage) > MGF0921A L & S BAND / 2W SMD non - matched MGF09121A TYPICAL CHARACTERISTICS Publication Date : Apr., 2011 2 < High-power GaAs FET (small signal gain , =500mA, Reference Plane see Fig.1) Publication Date : Apr., 2011 3 < High-power GaAs FET (small signal gain
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MGF0921A
MGF0921A
33dBm
17dBm
500mA
50pcs)
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2011 - Not Available
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in , Publication Date : Apr., 2011 1 < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 , band internally matched power GaAs FET > MGFK33V4045 14.0 14.5 GHz BAND / 2W MGFK33V4045 , Publication Date : Apr., 2011 3 < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0
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MGFK33V4045
MGFK33V4045
700mA
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2011 - Not Available
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 â 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in , : Channel-case 1 < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 â 14.5 GHz BAND / 2W MGFK33V4045 TYPICAL CHARACTERISTICS < X/Ku band internally matched power GaAs FET , -72 0.142 -93 0.12 93 < X/Ku band internally matched power GaAs FET > MGFK33V4045
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MGFK33V4045
MGFK33V4045
700mA
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Not Available
Abstract: No abstract text available
Text: 1 .8 A V % 10 °c / w MITSUBISHI SEMICONDUCTOR < GaAs FET > M G FK 3 3 V 4 0 4 5 , 97 â² MITSUBISHI SEMICONDUCTOR < GaAs FET > M G FK 3 3 V 4 0 4 5 1 4 .0 â 14.5GHz BAND 2W , MITSUBISHI SEMICONDUCTOR CGaAs FET > M GFK33V4045 1 4 .0 â 14.5GHz BAND 2W INTERNALLY M ATCHED GaAs F E T DESCRIPTION The M G F K 3 3 V 4 0 4 5 is an in te rn a lly impedance matched GaAs power FET especially designed fo r use in 14.0 ~ 14.5 GHz-band am plifiers. The herm etically sealed
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GFK33V4045
700mA)
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1999 - 2w,GaAs FET
Abstract: ITT6401D
Text: 8V 2W GaAs Power Amplifier Die (4.5 - 7.1 GHz) ITT6401D FEATURES · · · · · · · · , fabricated on GaAsTEK's mature GaAs Self-Aligned MSAG ® MESFET Process. This product is fully matched to 50 , IDS VGG IGG 2 3 RTH NF TOI - Thermal Resistance (Junction of 2nd stage FET to TCARRIER , FET determines the overall thermal performance. Therefore, when performing thermal calculations, the , USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 1 8V 2W GaAs
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ITT6401D
ITT6401D
360mA
2w,GaAs FET
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GaAsTEK
Abstract: No abstract text available
Text: 8V 2W GaAs Power Amplifier Die (4.5 - 7.1 GHz) ITT6401D FEATURES · · · · · · · · Broadband , amplifier fabricated on GaAsTEK's mature GaAs Self-Aligned MSAG ® MESFET Process. This product is fully , 2nd stage FET to T carr^ r, Note Noise Figure Third-Order Intercept Point (Idq= 525 mA) Stability (P,N , on page 3 are followed. The second stage FET determines the overall thermal performance. Therefore , www.gaastek.com Te|. 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 I -1 8V 2W GaAs Power Amplifier
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ITT6401D
ITT6401D
loQ-360mA
GaAsTEK
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1999 - ITT6401FM
Abstract: No abstract text available
Text: 2W GaAs Power Amplifier (4.5 - 7.1 GHz) ITT6401FM FEATURES · · · · · · · · · · Broadband , amplifier fabricated on GaAsTEK's mature GaAs Self-Aligned MSAG ® MESFET Process. This product is fully , Harmonics (=5.5 GHz, POUT=34 dBm) Thermal Resistance (Junction of 2nd stage FET to TCarrier, Note 1) Noise , second stage FET determines the overall thermal performance. Therefore, when performing thermal , 1-888-563-3949 (USA) Fax: 1-540-563-8616 1 2W GaAs Power Amplifier (4.5 - 7.1 GHz) ITT6401FM TYPICAL
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ITT6401FM
6401FM
ITT6401FM
360mA
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Not Available
Abstract: No abstract text available
Text: 2W GaAs Power Amplifier (4.5 - 7.1 GHz) ITT6401FM FEATURES Broadband Performance High Linear , The ITT6401FM is a two stage MMIC power amplifier fabricated on GaAsTEK's mature GaAs Self-Aligned , =5.5 GHz, PoUT=34 dBm) Thermal Resistance (Junction of 2nd stage FET to Tcarrier- Note 1) Noise Figure , 3 /0 Rt h NF TOI - Unit GHz dBm dB dB % mA V mA Note 1: The second stage FET determines the , : 1-540-563-8616 AumofiTTWDOsrmes 2W GaAs Power Amplifier (4.5 - 7.1 GHz) ITT6401FM TYPICAL
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ITT6401FM
ITT6401FM
360mA
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b1415
Abstract: GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89
Text: hetero-junction power FETs, III.) low distortion GaAs power FETs, IV.) internally matched power FETs, and V , discrete FET products include super low noise and high gain hetero-junction FETs (EPB series), high efficiency hetero-junction power FETs (EPA series), and low distortion GaAs power FETs (EFA & EFC series). , from 20mW to 10W. The typical IP3 for the low distortion GaAs power FETs (EFA & EFC series) and high , , EPA240D-SOT89, EFA480C-SOT89 and EPA480C-SOT89 are available now. The internally matched power FET products
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RTC/5/01/PSINTRO
24-hour
200oC,
275oC
b1415
GAAS FET CROSS REFERENCE
gaas fet 70 mil micro-X Package
power fet 70 mil micro-X Package
EPA240BV
N5 micro-X Package
EPA060B-70
MIXER EMA
0.5w ,GaAs FET
EPA480C-SOT89
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2006 - MwT-22
Abstract: 2w, GaAs FET
Text: MwT-22 2W High Linearity GaAs FET Preliminary Data Sheet June 2006 Features: · · · · · · · +33 dBm typical Output Power at 6 GHz 12 dB typical Small Signal Gain at 6 GHz 40% typical PAE at 6 GHz 0.5 x 4800 Micron Refractory Metal/Gold Gate Sorted into 100 mA Idss Bin Ranges , MwT-22 2W High Linearity GaAs FET Preliminary Data Sheet June 2006 DC Specifications: SYMBOL , -22 is GaAs MESFET device device whose nominal 0.5 micron gate length and 4800 micron gate width make it
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MwT-22
MwT-22
2w, GaAs FET
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2000 - 2w,GaAs FET
Abstract: 6401FN
Text: MA06401FN 2W GaAs Power Amplifier (4.5 - 6.9 GHz) Advanced Information FEATURES ·= ·= , fabricated on M/A-COM's GaAs SelfAligned MSAG® MESFET Process. This product is fully matched to 50 ohms on , (Junction of 2 stage FET to TCarrier) Noise Figure Third-Order Intercept Point (IDQ=525 mA) Stability , +4 70 V V dBm mA °C (1). The second stage FET determines the overall thermal performance , (1344) 300 020 Visit www.macom.com for additional data sheets and product information 2W GaAs
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MA06401FN
6401FN
MA06401FN
2w,GaAs FET
6401FN
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sot-23 12w
Abstract: 12w sot-23 AF002C4
Text: GaAs MMIC Control FET Series in SOT 23 DC-2.5 GHz AF002C1-39, AF002C4-39 0 A lpha Features , ) 824-4579 GaAs MMIC Control FET Series in SOT 23 DC-2.5 GHz AF002C1-39, AF002C4-39 Truth Table1 , ) O 10K - I - -O R> GaAs FET AF002C Series G C(pF) Di ~i Vc t l O AA/V- GaAs FET AF002C Series Part Number AF002C1-39 AF002C4-39 AF002C1-39 AF002C4-39 Frequency MHz , in the circuit examples on Page 1 -6 and 1-7. Description This group of GaAs control FETs can be
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AF002C1-39,
AF002C4-39
AF002C1-39
0/-12V
sot-23 12w
12w sot-23
AF002C4
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GHz Power FET
Abstract: No abstract text available
Text: GaAs MMIC SP2T FET Non-Reflective Switch With Driver 20 MHz-2 GHz AE002M2-29 0 Alpha Features Non-Reflective All Ports Low Current Consumption (< 20 ^A) Two Line Control 1/2 Watt 1dB , FAX: (617) 824^4579 GaAs MMIC SP2T FET Non-Reflective Switch With Driver 20 MHz-2 GHz AE002M2 , -38534 Class "K" Screening Requirements Description The AE002M2-29 is a SP2T non-reflective FET MMIC switch. The switch consists of a GaAs SP2T chip and a silicon CMOS driver. It operates with +5 volts bias and
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AE002M2-29
MIL-H-38534
AE002M2-29
GHz Power FET
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2002 - Q62702-L90
Abstract: marking K gaas fet gaas fet marking a gaas fet marking C
Text: CLY 5 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz , Resistance CLY 5 GaAs FET Electrical characteristics (TA = 25°C , unless otherwise specified , Europe October 1st, 2002 pg. 2/8 CLY 5 GaAs FET Compression Power vs. Drain-Source Voltage f , Semiconductor Europe October 1st, 2002 pg. 3/8 5 6 7[V] 8 CLY 5 GaAs FET typ. Common , 0.79 0.162 CLY 5 GaAs FET typ. Common Source S-Parameters and noise data VDS = 5 V ID =
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Q62702-L90
Q62702-L90
marking K gaas fet
gaas fet marking a
gaas fet marking C
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2007 - AV02-0626EN
Abstract: Avago Mounted Amplifiers ka-band bare ka band gaas fet Package Ka-band 1A12 30SPA0536 8A10 2.4ghz 4w 32A16
Text: distributed line-based low-loss power combining design techniques utilizing a 0.15m GaAs PHEMT production , . The MMIC PA design started from extracting scalable FET equivalent circuit model parameters. A 400µm FET that is consists of four fingers with two via-holes was used for the device characterization , . [1]F. Y. Colomb and A. Platzker, "2 and 4Watt Ka-band GaAs PHEMT power amplifier MMICs," 2003 IEEE , . Brehm, "A compact 30GHz MMIC high power (3W CW) in chip and packaged form," 2002 IEEE GaAs IC Digest
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31GHz
33dBm
35dBm
AV02-0626EN
Avago Mounted Amplifiers
ka-band bare
ka band gaas fet Package
Ka-band
1A12
30SPA0536
8A10
2.4ghz 4w
32A16
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GHz Power FET
Abstract: No abstract text available
Text: GaAs MMIC FET SPDT Switch in MS0P8 Package DC-2.5 GHz AS104-59 EQAI^IìÉi Features Ultra Miniature Surface Mount Package Footprint is 50% of SOIC 8 Low Insertion Loss Low Power Consumption High Intercept Point Description This GaAs MMIC SPDT reflective switch is in an ultra miniature MSOP8 low cost surface mount package and operates with 0 and - 5 volts. Electrical , . MA01801 TEL: (617) 935-5150 · FAX: (617) 824-4579 GaAs MMIC FET SPDT Switch in MS0P8 Package DC
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AS104-59
MA01801
GHz Power FET
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AF002C1-32
Abstract: No abstract text available
Text: GaAs MMIC Control FET in SOT 143 DC-2.5 GHz AF002C1-32 EBAIpfia Features Low Cost Small SOT 143 Package Series or Shunt Configuration Low DC Current Drain Ideal Switch Building Block m Absolute Maximum Ratings Description The AF002C1-32 consists of a single GaAs switching FET that can be used in both series and shunt configurations. A positive control voltage may be used by , ) 935-5150 · FAX: (617) 824-4579 GaAs MMIC Control FET in SOT 143 DC-2.5 GHz AF002C1-32 Typical
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AF002C1-32
AF002C1-32
AF002C1-39
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fast fet MHz
Abstract: GHz Power FET
Text: GaAs M MIC SP4T FET Non-Refledi ve Switch With Driver 20 MHz-2 GHz AE002M4-05 H QAlpha Features Non-Reflective All Ports Low Current Consumption (< 20 ¡¿A) Two Line Control 1/2 Watt 1dB Compression Point Single +5V, Bias Supply Fast Amplitude and Phase Settling Times Capable of Meeting MIL-H , Description The AE002M4-05 is a SP4T non-reflective FET MMIC switch. The switch consists of a GaAs SP4T chip , , MA 01801 TEL: (617) 935-5150 · FAX: (617) 824-4579 GaAs MMIC SP4T FET Non-Reflective Switch With
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AE002M4-05
MIL-H-38534
AE002M4-05
fast fet MHz
GHz Power FET
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Not Available
Abstract: No abstract text available
Text: GaAs MMIC FET Transfer Switch DC-4 GHz AD004T2-00, AD004T2-11 Features Broad Bandwidth Low DC Power Dissipation (< 20 uA) AD004T2-00 AD004T2-11 Low Differential Phase Between Paths Meets M IL -S T D -883 Screening Requirements Chip Size 30 x 39 x 8 Mils J2 Description The A D 004T2-00 is a GaAs 4 Port FET switch configured as a transfer switch. The device is useful for low power , by 0 .0 0 3 dB/°C. © 01 o GaAs MMIC FET Transfer Switch DC-4 GHz AD004T2-00, AD004T2
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AD004T2-00,
AD004T2-11
AD004T2-00
004T2-00
004T2-11
MA01801
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AD004T2-00
Abstract: AD004T2-11 2w, GaAs FET
Text:  GaAs MMIC FET Transfer Switch DC-4 GHz ^AlÃbM AD004T2-00, AD004T2-11 Features â Broad Bandwidth â Low DC Power Dissipation (< 20 ^A) â Low Differential Phase Between Paths â Meets MIL-STD-883 Screening Requirements â Chip Size 30x39x8 Mils Description The AD004T2-00 is a GaAs 4 Port FET switch configured as a transfer switch. The device is useful for low power transfer switching , SYLVAN ROAD, WOBURN, MA 01801 TEL: (617) 935-5150 ⢠FAX: (617) 824-^579 GaAs MM1C FET Transfer Switch
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AD004T2-00,
AD004T2-11
MIL-STD-883
30x39x8
AD004T2-00
AD004T2-11
G0G2543
2w, GaAs FET
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1998 - Not Available
Abstract: No abstract text available
Text: GaAs MMIC SP2T FET NonâReflective Switch With Driver 20 MHzâ2 GHz AE002M2â29 Features NonâReflective All Ports Low Current Consumption (< 20 µA) Two Line Control 1/2 Watt 1dB Compression Point Single +5V, Bias Supply J1 Fast Amplitude and Phase Settling Times Capable of Meeting MILâHâ , AE002M2â29 is a SP2T nonâreflective FET MMIC switch. The switch consists of a GaAs SP2T chip and a , ) 824â4579 GaAs MMIC SP2T FET NonâReflective Switch With Driver 20 MHzâ2 GHz AE002M2â
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AE002M2â
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Not Available
Abstract: No abstract text available
Text: GaAs MM1C SPDT FET Switch Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 0 3 Alpha Features Broadband D C -6 G H z Low Loss Reflective (Open) Low D.C. Power Consumption Excellent Intermodulation Product\Temp. Stability Meets M IL -S T D -8 8 3 Screening Requirements AS004R2-11 AS006R2-10 Description The GaAs S P D T FET reflective chip is offered in four separate , . * 20 SYLVAN ROAD, WOBURN, MA 01801 TEL: (617) 935-5150 · FAX: (617) 824-4579 GaAs MMIC SPDT FET
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AS006R2-01,
AS006R2-10,
AS004R2-08,
AS004R2-11
AS004R2-11
AS006R2-10
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