ARF300 Search Results

ARF301

Abstract: "RF MOSFET" 300W ARF300
Contextual Info: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF

Contextual Info: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF

4948

Abstract: ARF300 ARF301 50VDSS
Contextual Info: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF

ARF300

Abstract: ARF301 250nH 390PF 2.5 160V 431nH
Contextual Info: Application Note 1808 April 2010 ARF300 – ARF301 In N-N and N-P Half Bridge RF Generators with Pulse and Sine Drive George J. Krausse Microsemi Corp. RF Power Products Group 405 SW Columbia St. Bend, OR 97702 USA gkrausse@microsemi.com and Richard Frey, P.E. K4XU

4948

Abstract: ARF300 ARF301 class E power amplifier 13.56 300w class ab amplifier microsemi application note
Contextual Info: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF

ARF301

Contextual Info: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF

Contextual Info: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF

Contextual Info: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.

Contextual Info: ARF Low Profile Wirewound Metal Clad Resistors Flexible design with high pulse capability, ideally suited to braking and inverter / converter applications. Enhanced power levels can be achieved when heatsink mounted. • High power density • Low profile

Contextual Info: ARF Low Profile Wirewound Metal Clad Resistors Flexible design with high pulse capability, ideally suited to braking and inverter / converter applications. Enhanced power levels can be achieved when heatsink mounted. • High power density • Low proile • 600V cables as standard

DRF1400

Abstract: 1n4148 spice model DRF1300 ic configuration of xnor gates PPG100 ARF467 ARF300 Signal Generator spice model 1n4148 DRF1200 microsemi drf1400
Contextual Info: Application Note 1807 December 2009 DRF Series SPICE Models George Krausse Phone: 541-382-8028, ext. 1200 gkrausse@microsemi.com Introduction This application note presents SPICE Models for DRF100, DRF1200 and DRF1300 and DRF1400. These models are presented in two forms. The first, most straightforward, form is in applications where node zero 0 , (ground), is