AQW61 Search Results

AQW61

Abstract: AQW612EHA AQW612 AQW612EH AQW610EH AQW610EHA AQW614EH AQW614EHA
Contextual Info: GU-E Form A & B AQW61PEH TESTING VDE (AQW610EH, 614EH) (AQW612EH) Both NO and NC contacts incorporated in a compact DIP8-pin Reinforced insulation GU-E Form A & B (AQW61PEH) FEATURES 6.4 .252 3.2 .126 9.86 .388 6.4 .252 9.86 .388 2.9 .114 mm inch 1 N.C.

panasonic aqw612ehax

Contextual Info: GU-E Form A & B AQW61❍EH TESTING VDE (AQW610EH, 614EH) (AQW612EH) Both NO and NC contacts incorporated in a compact DIP8-pin Reinforced insulation GU-E Form A & B (AQW61❍EH) FEATURES 6.4 .252 3.9 .154 9.78 .385 6.4 .252 9.78 .385 3.6 .142 mm inch 1 N.C.

AQW614S

Abstract: RELAY
Contextual Info: AQW614S HIGH VOLTAGE, PHOTO MOS RELAY 65 Shark River Road, Neptune, New Jersey 07753-7423 Tel: 732-922-6333 Fax: 732-922-6363 E-Mail: globalcomponents@msn.com 65 Shark River Road, Neptune, New Jersey 07753-7423 Tel: 732-922-6333 Fax: 732-922-6363 E-Mail: globalcomponents@msn.com

AQW614

Abstract: AQW614A AQW614AX AQW614AZ
Contextual Info: ✷❉o❏oMO✺.❃ook ✷❂❈❆ ✤✣★ ✻❉❑❍•❅❂❖, M❂❍❄❉ ✥✩, ✥✣✣✬ ✥:✥✤ ✷M GU Form A & B AQW614 Both NO and NC contacts incorporated in a DIP8-pin package 6.4 .252 9.78 .385 3.9 .154 6.4 .252 9.78 .385 3.6

AQW612S

Abstract: AQW612SX AQW612SZ AQW610S AQW610SX AQW610SZ
Contextual Info: PhotoMOS MOSFET PhotoMOS MOSFET输出光电耦合器 输出光电耦合器) GU SOP1a1b 尺寸图 分类与电路构成 动作原理的说明 P.240 P.244 P.236 术语说明 使用注意事项 P.245 应用电路示例 P.246 对应RoHS VDE TESTING AQW610S 获得认证

AQW612

Abstract: aqw612eha AQW610EH AQW610EHA AQW612EH AQW614EH AQW614EHA
Contextual Info: GU-E PhotoMOS AQW61❍EH TESTING VDE (AQW610EH, 614EH) (AQW612EH) General use and economy type. DIP (1 Form A/1 Form B) 8-pin type. Reinforced insulation 5,000V type. GU-E PhotoMOS (AQW61❍EH) FEATURES 6.4 .252 3.2 .126 9.86 .388 1. 60V type couples high capacity

AQW612

Abstract: AQW612EH AQW610EH AQW610EHA AQW612EHA AQW614EH AQW614EHA
Contextual Info: GU-E Form A & B AQW61EH TESTING Both NO and NC contacts incorporated in a compact DIP8-pin Reinforced insulation AQW61EH VDE (AQW610EH, 614EH) (AQW612EH) GU-E Form A & B (AQW61EH) FEATURES 6.4 .252 3.2 .126 9.86 .388 6.4 .252 9.86 .388 2.9 .114

relay 5 pin 12v 6a

Abstract: schematic diagram dc to ac converter varistor 12V 1 A schematic diagram dc to ac 6 pin current control forward dc to dc converter temperature controller circuit diagram with relay 2 pin ir led receiver generator 1 hz 5 pin relay configuration 5 pin relay data sheet
Contextual Info: AQW614 PhotoMOS RELAYS GU General Use Type 2-Channel (Form A Form B) Type UL File No.: E43149 CSA File No.: LR26550 FEATURES 1. Approx. 1/2 the space compared with the mounting of a set of 1 Form A and 1 Form B PhotoMOS relays A set of 1 Form A and 1 Form B type

schematic diagram ac-dc supply

Abstract: AC-DC using 4 Diodes smd led datasheet TIP 126 Transistors Diodes smd e2 IR LED infrared led schematic diagram heater AQW614EHA AQW614EHAX AQW614EHAZ
Contextual Info: AQW614EH PhotoMOS RELAYS GU General Use -E Type 2-Channel (Form A Form B) Type UL File No.: E43149 CSA File No.: LR26550 9.86 .388 FEATURES 6.4 .252 3.2 .126 6.4 .252 9.86 .388 2.9 .114 mm inch control of low-level analog signals without distortion. 5. High sensitivity, high speed

AQW614

Abstract: AQW614A AQW614AX AQW614AZ
Contextual Info: GU Form A & B AQW614 Both NO and NC contacts incorporated in a DIP8-pin package GU Form A & B (AQW614) AQW614 6.4 .252 9.78 .385 3.9 .154 6.4 .252 9.78 .385 3.6 .142 mm inch 1 N.C. 8 2 7 3 6 FEATURES TYPICAL APPLICATIONS 1. Approx. 1/2 the space compared

AQW612

Contextual Info: GU-E Form A & B AQW61PEH TESTING VDE (AQW610EH, 614EH) (AQW612EH) Both NO and NC contacts incorporated in a compact DIP8-pin Reinforced insulation AQW61PEH GU-E Form A & B (AQW61PEH) FEATURES 6.4 .252 3.2 .126 9.86 .388 6.4 .252 9.86 .388 2.9 .114 CAD Data

Contextual Info: GU-E PhotoMOS AQW61❍EH TESTING VDE (AQW610EH, 614EH) (AQW612EH) General use and economy type. DIP (1 Form A/1 Form B) 8-pin type. Reinforced insulation 5,000V type. GU-E PhotoMOS (AQW61❍EH) FEATURES 6.4 .252 3.2 .126 9.86 .388 1. 60V type couples high capacity

Contextual Info: Compact DIP 1Form A/ 1Form B 8-pin type. Controls load voltage 400V. GU PhotoMOS (AQW614) FEATURES 6.4 .252 9.78 .385 3.9 .154 6.4 .252 9.78 .385 3.6 .142 mm inch 1 N.C. 8 2 7 3 6 4 5 N.O. 1. Approx. 1/2 the space compared with the mounting of a set of 1 Form A

AQW614A

Contextual Info: AQW614A HIGH VOLTAGE, PHOTO MOS RELAY 65 Shark River Road, Neptune, New Jersey 07753-7423 Tel: 732-922-6333 Fax: 732-922-6363 E-Mail: globalcomponents@msn.com 65 Shark River Road, Neptune, New Jersey 07753-7423 Tel: 732-922-6333 Fax: 732-922-6363 E-Mail: globalcomponents@msn.com

AQW610EH

Abstract: AQW610EHA AQW610EHAX AQW610EHAZ AQW614EH AQW614EHA AQW614EHAX AQW614EHAZ
Contextual Info: AQW61❍EH TESTING PhotoMOS RELAYS GU General Use -E Type 2-Channel (Form A Form B) Type FEATURES 6.4 .252 3.2 .126 9.86 .388 6.4 .252 9.86 .388 2.9 .114 mm inch 1 8 N.C. 2 7 3 6 4 5 N.O. 5. High sensitivity, high speed response. Can control a maximum 0.14 A load current with a 5 mA input current. Fast operation speed of 0.5ms (typ.)

Contextual Info: GU SOP Form A & B AQW61❍S Both NO and NC contacts incorporated in a small SOP8-pin package 4.4 .173 2.1 .083 9.37 .369 mm inch 1 8 N.C. 2 7 3 6 4 5 N.O. RoHS compliant TESTING VDE AQW610S (AQW612S) GU SOP Form A & B (AQW61❍S) FEATURES TYPICAL APPLICATIONS

AQW610EH

Abstract: AQW610EHA AQW610EHAX AQW610EHAZ AQW614EH AQW614EHA AQW614EHAX AQW614EHAZ
Contextual Info: AQW61❍EH TESTING PhotoMOS RELAYS GU General Use -E Type 2-Channel (Form A Form B) Type FEATURES 9.86 .388 6.4 .252 3.2 .126 9.86 .388 6.4 .252 2.9 .114 mm inch 5. High sensitivity, high speed response. Can control a maximum 0.14 A load current with a 5 mA input current. Fast operation speed of 0.5ms (typ.)

AQW614

Abstract: AQW614A AQW614AX AQW614AZ
Contextual Info: Compact DIP 1Form A/ 1Form B 8-pin type. Controls load voltage 400V. GU PhotoMOS (AQW614) FEATURES 6.4 .252 9.78 .385 3.9 .154 6.4 .252 9.78 .385 3.6 .142 mm inch 1 N.C. 8 2 7 3 6 4 5 N.O. 1. Approx. 1/2 the space compared with the mounting of a set of 1 Form A

AQW612S

Abstract: AQW610S AQW610SX AQW610SZ AQW612SX AQW612SZ AQW612
Contextual Info: GU PhotoMOS AQW61❍S Super miniature design, SOP (1Form A/1Form B) 8-pin type. Controls load voltage 60V, 350V. 4.4 .173 2.1 .083 9.37 .369 mm inch 1 N.C. 8 2 7 3 6 4 2. 2 channels in super miniature design The device comes in a super-miniature SO package measuring (W) 4.4 x

AQW614

Contextual Info: GU Form A & B AQW614 Both NO and NC contacts incorporated in a DIP8-pin package GU Form A & B (AQW614) AQW614 6.4 .252 9.78 .385 3.9 .154 6.4 .252 9.78 .385 3.6 .142 CAD Data mm inch 1 N.C. 8 2 7 3 6 4 FEATURES TYPICAL APPLICATIONS 1. Approx. 1/2 the space compared

AQV10

Abstract: AQV20 AQV21 AQW614 AQW614A AQW614AX AQW614AZ LR26550 AQV202 55Hzat
Contextual Info: AQW614 PhotoMOS RELAYS GU General Use Type 2-Channel (Form A Form B) Type UL File No.: E43149 CSA File No.: LR26550 FEATURES 1. Approx. 1/2 the space compared with the mounting of a set of 1 Form A and 1 Form B PhotoMOS relays A set of 1 Form A and 1 Form B type

Contextual Info: TESTING Super miniature design, SOP 1Form A/1Form B 8-pin type. Controls load voltage 350V. GU PhotoMOS (AQW610S) FEATURES 1. 2 channels in super miniature design The device comes in a super-miniature SO package measuring (W) 4.4 x (L) 9.37 × (H) 2.1 mm (W) .173× (L) .369× (H) .083

Contextual Info: GU-E PhotoMOS AQW61❍EH TESTING General use and economy type. DIP (1 Form A/1 Form B) 8-pin type. Reinforced insulation 5,000V type. GU-E PhotoMOS (AQW61❍EH) FEATURES 6.4 .252 3.2 .126 9.86 .388 6.4 .252 9.86 .388 2.9 .114 mm inch 1 8 N.C. 2 7 3 6 4 5

Contextual Info: AQW61❍EH TESTING PhotoMOS RELAYS GU General Use -E Type 2-Channel (Form A Form B) Type FEATURES 6.4 .252 3.2 .126 9.86 .388 6.4 .252 9.86 .388 2.9 .114 mm inch 1 8 N.C. 2 7 3 6 4 5 N.O. 5. High sensitivity, high speed response. Can control a maximum 0.14 A load current with a 5 mA input current. Fast operation speed of 0.5ms (typ.)