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    APT64GA90B Search Results

    APT64GA90B Datasheets (2)

    Microsemi
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    APT64GA90B
    Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 64; Original PDF 200.37KB 6
    APT64GA90B2D30
    Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; Original PDF 231.92KB 9
    SF Impression Pixel

    APT64GA90B Price and Stock

    Microchip Technology Inc

    Microchip Technology Inc APT64GA90B

    High Speed PT IGBT N-Channel 900V 117A 3-Pin TO-247 - Rail/Tube (Alt: APT64GA90B)
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    Onlinecomponents.com APT64GA90B
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    Microchip Technology Inc APT64GA90B2SC30

    IGBT PT MOS 8 Combi 900 V 64 A TO-247 MAX - Rail/Tube (Alt: APT64GA90B2SC30)
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    Microchip Technology Inc APT64GA90B2SC30 Tube 98 28 Weeks
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    Master Electronics APT64GA90B2SC30
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    Microchip Technology Inc APT64GA90B2D30

    - Rail/Tube (Alt: APT64GA90B2D30)
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    APT64GA90B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    APT64GA90B

    Abstract: MIC4452 DIODE 76A
    Contextual Info: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original
    apt64ga90bapt64ga90smic4452diode 76a PDF

    APT64GA90B2D30

    Abstract: IGBT 900v 60a Fast Recovery Bridge Rectifier, 60A, 600V APT10035LLL APT64GA90LD30 MIC4452 1000A MOS
    Contextual Info: APT64GA90B2D30 APT64GA90LD30 900V APT64GA90B2D30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original
    apt64ga90b2d30apt64ga90ld30igbt 900v 60afast recovery bridge rectifier, 60a, 600v+3apt10035lllmic44521000a mos PDF

    Contextual Info: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original
    apt64ga90bapt64ga90s PDF

    APT64GA90B

    Abstract: MIC4452 DIODE 76A
    Contextual Info: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original
    apt64ga90bapt64ga90smic4452diode 76a PDF

    Contextual Info: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original
    apt64ga90bapt64ga90s PDF

    Contextual Info: APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original
    apt64ga90ld30apt64ga90b2d30o-247 PDF

    3525 boost

    Abstract: IGBT full bridge APT64GA90B MIC4452
    Contextual Info: APT64GA90B 900V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original
    apt64ga90b3525 boostigbt full bridgemic4452 PDF

    IGBT 900v 60a

    Abstract: Fast Recovery Bridge Rectifier, 60A, 600V MIC4452 APT64GA90B2D30 APT64GA90LD30
    Contextual Info: APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original
    apt64ga90ld30apt64ga90b2d30igbt 900v 60afast recovery bridge rectifier, 60a, 600v+1mic4452 PDF

    Contextual Info: APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original
    apt64ga90ld30apt64ga90b2d30o-247 PDF

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


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    10f-asp6-pn-channel mosfet 800v 50a to-247smps 1000w igbt reference design+7drf140045a, 1200v n-channel npt series igbtaptes80da120c3gapt35dl120hjsemiconductors cross referenceigbt triple modules 100a2000w mosfet power inverter PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    p462-ndp463-ndlng295lfcp2ulng395mftp5u+11us2011schematic diagram atx power supply 500wpioneer pal 012a1000w inverter pure sine wave schematic diagram600va numeric ups circuit diagramswinbond bios 25064tle 9180 infineonsmsc mec 1300 nutbe schematic diagram inverter 2000wdk55circuit diagram of luminous 600va ups PDF

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Contextual Info: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original
    des69110f-asmps 1000w600v 300a igbt dc to dc boost converter+8sp6-pdrf1400smps 500w half bridgedrf13001000w inverter mosfet1000w solar power inverterapt30gt60brg3000w inverter mosfet circuit PDF

    SOT-227 lead frame

    Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
    Contextual Info: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic


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    mil-prf-19500so-268o-220o-247+12o-264ot-227sot-227 lead frame5kw smps full bridge s.m.p.splad15kpapt10026l2fllg5kw smps full bridgefast recovery rectifiers mx gp 043smbx6.0ado215aapfc 1.5kw1.5ke series PDF

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


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    le79q22811n6761-12n2369au2n2907aub+6br17datasheet transistor si 6822dimming led aplicationsdimming led driver aplicationsgc4600ic zl70572 PDF

    single phase inverter IGBT

    Abstract: wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter mosfet power inverter 500w single phase inverter SiC IGBT High Power Modules APT50GT60BRDQ2G
    Contextual Info: Product Solutions for Inverters in Distributed Power Markets Solar, Wind, UPS 1 Power Semiconductors for Inverters Your Inverter Requirements… Our Business • Comprehensive range of power semiconductor products to meet the needs of 500W to 500kW inverters


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    500kwapt60n60bcsg00e-0700e-06+1150e-06single phase inverter igbtwind inverterthunderboltbuck 800v igbtsingle phase inverter mosfetsingle phase full bridge invertermosfet power inverter 500wsingle phase invertersic igbt high power modulesapt50gt60brdq2g PDF