APT501R1CN Search Results

Contextual Info: APT501R1CN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)7.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)

Contextual Info: ADVANCED POIdER TECHNOLOGY b lE D • OSSTRGT DDDG7bS S T 3 ■ AVP ADVANCED POW ER Te c h n o l o g y ?D O s POWER MOS IV APT5085CN APT4585CN APT501R1CN APT451R1CN 500V 450V 500V 450V 8.0A 8.0A 7.0A 7.0A 0.85Q 0.85Q 1.1 Ofi 1.1 Ofl N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Contextual Info: advanced power " TA technology jy I* T DE I a S S T T D T □□□□□10 3 e! -15 For Additional Information Contact A PT Sales Representatives O r The Factory. Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1003R5CN APT1004R2CN APT902R5CN APT903RCN

APT1004RGN

Contextual Info: APT HERMETIC MOSFET PRODUCTS BV DSS Volts 1000 800 600 500 4UC 1000 800 R ds o n Ohms lD(Cont.) CiSS(pF) Qg(nC) A PT New Product Package Am ps Watts Typ Typ Part No. Comments Style 1.100 1.300 9.5 250 2460 90 APT1001R1HN 90 250 2460 90 APT1001R3HN 0.750