APT35GA90SD15 Search Results
APT35GA90SD15 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| APT35GA90SD15 |
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Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 35; | Original | 244.37KB | 9 |
APT35GA90SD15 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: APT35GA90BD15 APT35GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low |
Original |
apt35ga90bd15apt35ga90sd15app61 | |
full wave BRIDGE RECTIFIER 1044Contextual Info: APT35GA90BD15 APT35GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low |
Original |
apt35ga90bd15apt35ga90sd15ver18full wave bridge rectifier 1044 | |
full wave BRIDGE RECTIFIER 1044
Abstract: DIODE RECTIFIER BRIDGE SINGLE 200A APT35GA90BD15 APT35GA90SD15 MIC4452 SD15
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apt35ga90bd15apt35ga90sd15full wave bridge rectifier 1044diode rectifier bridge single 200a+2 |